N-Channel -V (D-S), 75 C MOSFET Si4559EY V DS (V) r DS(on) ( ) (A) N-Channel P-Channel.55 @ V GS = V 4.5.75 @ V GS = 4.5 V 3.9. @ V GS = V 3..5 @ V GS = 4.5 V.8 D D S SO-8 S 8 D G 7 D S 3 D G 4 5 D G G Top View S N-Channel MOSFET D D P-Channel MOSFET Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS Gate-Source Voltage V GS T A = 5 C Continuous Drain Current (T J = 75 C) a 4.5 3. T A = 7 C 3.8. Pulsed Drain Current M 3 3 V A Continuous Source Current (Diode Conduction) a I S.. Maximum Power Dissipation a T A = 5 C T A = 7 C.4 P D.7 W Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C Parameter Symbol N- or P- Channel Unit Maximum Junction-to-Ambient a R thja.5 C/W Notes a. Surface Mounted on FR4 Board, t sec. Document Number: 77 www.vishay.com FaxBack 48-97-5 -
Static Parameter Symbol Test Condition Min Typ a Max Unit V DS = V GS, = 5 A N-Ch Gate Threshold Voltage V GS(th) V DS = V GS, = 5 A P-Ch N-Ch Gate-Body Leakage I GSS V DS = V, V GS = V P-Ch V DS = V, V GS = V N-Ch V DS = V, V GS = V P-Ch Zero Gate Voltage Drain Current SS V DS = V, V GS = V, T J = 55 C N-Ch 5 V na A V DS = V, V GS = V, T J = 55 C P-Ch 5 V DS 5 V, V GS = V N-Ch On-State Drain Current b (on) V DS 5 V, V GS = V P-Ch A V GS = V, = 4.5 A N-Ch.45.55 V GS = V, = 3. A P-Ch.. Drain-Source On-State Resistance b r DS(on) V GS = 4.5 V, = 3.9 A N-Ch.55.75 V GS = 4.5 V, =.8 A P-Ch.5.5 V DS = 5 V, = 4.5 A N-Ch 3 Forward Transconductance b g fs V DS = 5 V, = 3. A P-Ch 7.5 S I S =. A, V GS = V N-Ch.9. Diode Forward Voltage b V SD I S =. A, V GS = V P-Ch.8. V Dynamic a N-Ch 9 3 Total Gate Charge Q g N-Channel P-Ch 5 V DS = 3 V, V GS = V, = 4.5 A N-Ch 4 Gate-Source Charge Q gs P-Channel P-Ch 4 V DS = 3 V, V GS = V = 3.A N-Ch 3 Gate-Drain Charge Q gd P-Ch. nc N-Ch 3 Turn-On Delay Time t d(on) P-Ch 8 5 N-Channel N-Ch Rise Time t r V DD = 3 V, R L = 3 A, V GEN = V, R G = P-Ch P-Channel N-Ch 3 Turn-Off Delay Time t d(off) V VDD = 3 V, R L = 3 P-Ch I = = 5 D A, V GEN V, R G N-Ch Fall Time t f P-Ch 35 5 ns I F = A, di/dt = A/ s N-Ch 35 Source-Drain Reverse Recovery Time t rr I F = A, di/dt = A/ s P-Ch 9 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 s, duty cycle %. www.vishay.com FaxBack 48-97-5 - Document Number: 77
3 Output Characteristics 3 Transfer Characteristics V GS = thru 5 V T C = 55 C 4 8 4 V 4 8 5 C 5 C, V 3 V 3 4 5 3 4 5.5 On-Resistance vs. Drain Current 4 Capacitance.5..75.5.5 8 4 3 8 4 V DS = 3 V = 4.5 A V GS = 4.5 V Gate Charge V GS = V C Capacitance (pf) (Normalized) 8 4..9..3..7 C rss 4 3 48 V GS = V = 4.5 A C oss C iss On-Resistance vs. Junction Temperature 4 8.4 5 5 5 5 75 5 5 75 Q g Total Gate Charge (nc) T J Junction Temperature ( C) Document Number: 77 www.vishay.com FaxBack 48-97-5-3
Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 75 C T J = 5 C.8..4. = 4.5 A..4..8...4 V SD Source-to-Drain Voltage (V) 4 8.4 Threshold Voltage 5 Single Pulse Power. 4 Variance (V) VGS(th)...4. = 5 µa Power (W) 3.8. 5 5 5 5 75 5 5 75 T J Temperature ( C).. 3 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle =.5 Normalized Effective Transient Thermal Impedance....5. Single Pulse Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja =.5 C/W 3. T JM T A = P DM Z (t) thja 4. Surface Mounted. 4 3 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 48-97-5-4 Document Number: 77
3 Output Characteristics Transfer Characteristics V GS =, 9, 8, 7, V T C = 55 C 4 5 C 8 5 V 4 V 8 5 C 4 3 V 3 4 5 4 8. On-Resistance vs. Drain Current 4 Capacitance.8..4. 4 8 8 4 V DS = 3 V = 3. A V GS = 4.5 V Gate Charge V GS = V C Capacitance (pf) (Normalized) 8 4 3 4 5....8.4 C rss C oss V GS = V = 3. A C iss On-Resistance vs. Junction Temperature 4 8 5 5 5 5 75 5 5 75 Q g Total Gate Charge (nc) T J Junction Temperature ( C) Document Number: 77 www.vishay.com FaxBack 48-97-5-5
Source-Drain Diode Forward Voltage.5 On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 75 C T J = 5 C.4.3.. = 3. A..5.5.75..5.5 4 8 V SD Source-to-Drain Voltage (V).75 Threshold Voltage 5 T C = 5 C Single Pulse Single Pulse Power.5 4 Variance (V) VGS(th).5. = 5 µa Power (W) 3.5 5 5 5 5 75 5 5 75.. 3 T J Temperature ( C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle =.5...5. Single Pulse. 4 3 Square Wave Pulse Duration (sec) Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja =.5 C/W 3. T JM T A = P DM Z (t) thja 4. Surface Mounted 3 www.vishay.com FaxBack 48-97-5 - Document Number: 77
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