Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting Ultrasmall package permitting applied sets to be small and slim Specifications ( ) : PNP Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)4 V Collector-to-Emitter Voltage VCEO (--) V Emitter-to-Base Voltage VEBO (--) V Collector Current IC (--) ma Collector Current (Pulse) ICP (--) A Collector Dissipation PC When mounted on ceramic substrate (6mm.8mm) 1unit. W Total Power Dissipation PT When mounted on ceramic substrate (6mm.8mm). W Junction Temperature Tj 1 C Storage Temperature Tstg -- to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) A-1.. 6 4.1 MCH641-TL-E Product & Package Information Package : MCPH6 JEITA, JEDEC : SC-88, SC--6, SOT-6 Minimum Packing Quantity :, pcs./reel Packing Type : TL Marking.1 1.6 to. LOT No. EP LOT No.. 1.6. TL Electrical Connection.8. 1 1 : Emitter1 (PNP TR) : Base1 (PNP TR) : Collector (NPN TR) 4 : Emitter (NPN TR) : Base (NPN TR) 6 : Collector1 (PNP TR) 6 4 6 4 MCPH6 1 Semiconductor Components Industries, LLC, 1 September, 1 961 TKIM/8EA TIIM TC-18 No.8949-1/8
MCH641 Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)V, IE=A (--) na Emitter Cutoff Current IEBO VEB=(--)4V, IC=A (--) na DC Current Gain hfe VCE=(--)V, IC=(--1)mA () ()8 Gain-Bandwidth Product ft VCE=(--)V, IC=(--)mA ()4 MHz Output Capacitance Cob VCB=(--)1V, f=1mhz (4.). pf Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)mA, IB=(--)1mA (--11)8 (--)19 mv Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)mA, IB=(--)1mA (--).9 (--)1. V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)1μA, IE=A (--)4 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE= (--) V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)1μA, IC=A (--) V Turn-On Time ton ns Storage Time tstg See specified Test Circuit. (1) ns Fall Time tf ()4 ns Switching Time Test Circuit PW=μs D.C. 1% IB1 IB OUTPUT INPUT VR RB RL Ω + + μf 4μF VBE= --V VCC=1V IC=IB1= --IB=mA For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo MCH641-TL-E MCPH6,pcs./reel Pb Free No.8949-/8
MCH641 -- --6 -- --4 -- -- -- --ma --4mA IC -- VCE --ma --ma --ma --1mA --1mA --ma --ma --ma --ma --1mA --μa 6 4 1mA ma ma ma IC -- VCE 1mA ma ma ma ma 1mA 4μA μa --8 I B =μa -- -- -- --4 -- --6 -- --8 --9 -- Collector-to-Emitter Voltage, V CE -- mv IT49 IC -- VBE V CE = --V 8 I B =μa 4 6 8 9 Collector-to-Emitter Voltage, V CE -- mv IT8 IC -- VBE V CE =V -- --6 -- --4 -- -- Ta= C C -- C 6 4 Ta= C C -- C -- DC Current Gain, h FE --. --.4 --.6 --.8 --1. --1. Base-to-Emitter Voltage, V BE -- V IT hfe -- IC VCE= --V Ta= C C -- C DC Current Gain, h FE..4.6.8 1. Base-to-Emitter Voltage, V BE -- V IT8 hfe -- IC V CE =V Ta= C C -- C Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv --1. --1 -- -- IT1 -- VCE(sat) -- IC I C / I B = -- Ta= C C -- C Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv 1. 1 IT84 VCE(sat) -- IC I C / I B = 1 Ta= C C -- C --1 --1. --1 -- -- IT4 1. 1. 1 IT8 No.8949-/8
MCH641 VCE(sat) -- IC I C / I B = VCE(sat) -- IC I C / I B = Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv -- -- Ta= C C -- C Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv Ta= C -- C C Base-to-Emitter Saturation Voltage, V BE (sat) -- V --1 --1. --1 -- -- IT VBE(sat) -- IC --1 I C / I B = --1. C Ta= -- C C Base-to-Emitter Saturation Voltage, V BE (sat) -- V 1 1. 1 IT86 1 VBE(sat) -- IC I C / I B = 1. Ta= -- C C C --.1 --1. --1 -- -- IT6 1 Cob -- VCB f=1mhz.1 1. 1 1 Cob -- VCB IT8 f=1mhz -- pf Output Capacitance, Cob -- pf Output Capacitance, Cob.1 --1. --1 Collector-to-Base Voltage, V CB -- V IT ft -- IC V CE = --1V 1. 1. 1 Collector-to-Base Voltage, V CB -- V IT88 ft -- IC V CE =1V Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz --1. --1 -- -- IT 1. 1 IT89 No.8949-4/8
MCH641 ON Resistance, Ron -- Ω 1 1. f=1mhz Ron -- IB 1kΩ IN 1kΩ I B OUT ON Resistance, Ron -- Ω 1 1. f=1mhz Ron -- IB 1kΩ IN 1kΩ I B OUT Allowable Power Dissipation, P D -- W.1 --.1.6...4...1 --1. --1 Base Current, I B -- ma IT64 PD -- Ta [PNP/NPN] When mounted on ceramic substrate (6mm.8mm) Total dissipation 1unit.1.1 1. 1 Base Current, I B -- ma IT69 4 6 8 1 14 16 Ambient Temperature, Ta -- C IT144 No.8949-/8
MCH641 Embossed Taping Specification MCH641-TL-E No.8949-6/8
MCH641 Outline Drawing MCH641-TL-E Land Pattern Example Mass (g) Unit.8 * For reference mm Unit: mm.4.1.6.6.6 No.8949-/8
MCH641 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.8949-8/8