FDMC78S Dual N-Channel PowerTrench MOSFET : 3 V, A, 9. mω : 3 V, 6 A, 6.4 mω Features : N-Channel Max r DS(on) = 9. mω at V GS = V, I D = A Max r DS(on) =. mω at V GS = 4.5 V, I D = A : N-Channel Max r DS(on) = 6.4 mω at V GS = V, I D = 6 A Max r DS(on) = 7.5 mω at V GS = 4.5 V, I D = 3.5 A Termination is Lead-free and RoHS Compliant Pin G S S S D General Description July 3 This device includes two 3V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Applications Computing Communications General Purpose Point of Load Notebook System D G S S S Power 33 MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Units V DS Drain to Source Voltage 3 3 V V GS Gate to Source Voltage (Note 4) ± ± V I D -Continuous T A = 5 C a 6 b Drain Current -Continuous (Package limited) T C = 5 C 6 -Pulsed 6 8 E AS Single Pulse Avalanche Energy (Note 3) mj P D Power Dissipation for Single Operation T A = 5 C.9 a.9 b W Power Dissipation for Single Operation T A = 5 C.8 c.8 d T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics A R θja Thermal Resistance, Junction to Ambient 65 a 65 b C/W R θja Thermal Resistance, Junction to Ambient 55 c 55 d Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC78S FDMC78S Power 33 3 mm 3 units Fairchild Semiconductor Corporation www.fairchildsemi.com
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS ΔBV DSS ΔT J On Characteristics Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient I D = 5 μa, V GS = V I D = ma, V GS = V I D = 5 μa, referenced to 5 C I D = ma, referenced to 5 C I DSS Zero Gate Voltage Drain Current V DS = 4 V, V GS = V I GSS V GS(th) ΔV GS(th) ΔT J r DS(on) g FS Gate to Source Leakage Current, Forward Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance V GS = V, V DS = V V GS = V, V DS = V I D = 5 μa, V GS = V I D = ma, V GS = V I D = 5 μa, referenced to 5 C I D = ma, referenced to 5 C V GS = V, I D = A V GS = 4.5 V, I D = A V GS = V, I D = A, T J = 5 C V GS = V, I D = 6 A V GS = 4.5 V, I D = 3.5 A V GS = V, I D = 6 A, T J = 5 C V DS = 5 V, I D = A V DS = 5 V, I D = 6 A 3 3.. 7.7.6-5 -3 6.7 8.8 9. 4.7 5.3 6.4 53 8 5 3. 3. 9...4 6.4 7.5 6.8 V mv/ C μa na V mv/ C mω S Dynamic Characteristics C iss Input Capacitance : V DS = 5 V, V GS = V, f = MHZ C oss C rss R g Output Capacitance Reverse Transfer Capacitance Gate Resistance : V DS = 5 V, V GS = V, f = MHZ.. 848 685 7 43 36 4.. 3 45 36 575 55 65.5.5 pf pf pf Ω Switching Characteristics t d(on) t r t d(off) t f Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time : V DD = 5 V, I D = A, R GEN = 6 Ω : V DD = 5 V, I D = 6 A, R GEN = 6 Ω Q g Total Gate Charge V GS = V to V V DD = 5 V, Q g Total Gate Charge V GS = V to 5 V I D = A Q gs Q gd Gate to Source Gate Charge Gate to Drain Miller Charge V DD = 5 V, I D = 6 A 6 7 3 6 3 3 6 6.7 4.3 3.9.8.7 4 9 36 8 36 9.4 ns ns ns ns nc nc nc nc Fairchild Semiconductor Corporation www.fairchildsemi.com
Electrical Characteristics T J = 5 C unless otherwise noted Drain-Source Diode Characteristics V SD t rr Q rr Symbol Parameter Test Conditions Type Min Typ Max Units Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge V GS = V, I S = A (Note ) V GS = V, I S = A (Note ) V GS = V, I S = A (Note ) V GS = V, I S = 6 A (Note ) I F = A, di/dt = A/μs I F = 6 A, di/dt = 3 A/μs Notes:.R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. SS SF DS DF G a. 65 C/W when mounted on a in pad of oz copper SS SF DS DF G.7.8.7.8 6 6 b. 65 C/W when mounted on a in pad of oz copper.... 34 33 8 V ns nc c. 55 C/W when mounted on a minimum pad of oz copper d. 55 C/W when mounted on a minimum pad of oz copper SS SF DS DF G SS SF DS DF G. Pulse Test: Pulse Width < 3 μs, Duty cycle <.%. 3. : E AS of mj is based on starting T J = 5 o C, L =.3 mh, I AS = A, V DD = 7 V, V GS = V. % tested at L = 3 mh, I AS = 5. A. : E AS of mj is based on starting T J = 5 o C, L =.3 mh, I AS = A, V DD = 7 V, V GS = V. % tested at L = 3 mh, I AS = 5.4 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 5 4 3 PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX 3 4 5.6.4...8 Figure. V GS = V V GS = 4.5 V I D = A V GS = V V GS = 4 V V GS = 3.5 V V GS = 3 V V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 4 5 6 On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage.6-75 -5-5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 5 4 3 4 3 V GS = 3 V V GS = 3.5 V V GS = 4.5 V I D, DRAIN CURRENT (A) I D = A PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX T J = 5 o C T J = 5 o C V GS = 4 V V GS = V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX 3 4 5 6 7 8 9 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 6 5 4 3 PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V DS = 5 V T J = 5 o C T J = 5 o C T J = -55 o C IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C..5..5 3. 3.5 4. V GS, GATE TO SOURCE VOLTAGE (V)....4.6.8.. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) 8 6 4 I D = A 5 5 Q g, GATE CHARGE (nc) 4 Figure 7. V DD = V V DD = 5 V V DD = V. 3 V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) ID, DRAIN CURRENT (A) f = MHz V GS = V THIS AREA IS LIMITED BY r DS(on) C iss C oss C rss ms ms SINGLE PULSE ms. T J = MAX RATED s R θja = 55 o C/W DERIVED FROM s T A = 5 o C TEST DATA DC... V DS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure. Forward Bias Safe Operating Area P (PK), PEAK TRANSIENT POWER (W).5-3 - - t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation SINGLE PULSE R θja = 55 o C/W T A = 5 o C Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. SINGLE PULSE R θja = 55 o C/W (Note b).5-3 - - t, RECTANGULAR PULSE DURATION (sec) Figure. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 6 4 V GS = 4.5 V V GS = 4 V V GS = 3.5 V V GS = V V GS = 3 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX..5..5..5 3. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 4. On- Region Characteristics.5.4.3....9.8 I D = 6 A V GS = V.7-75 -5-5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 4 3 V GS = 3 V V GS = 4 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V GS = 4.5 V V GS = 3.5 V V GS = V 4 6 8 I D, DRAIN CURRENT (A) Figure 5. Normalized on-resistance vs Drain Current and Gate Voltage rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 3 4 8 6 PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX I D = 6 A T J = 5 o C T J = 5 o C 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 6. Normalized On-Resistance vs Junction Temperature Figure 7. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 8 64 48 3 6 PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V DS = 5 V T J = 5 o C T J = 5 o C T J = -55 o C 3 4 V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = -55 o C T J = 5 o C....4.6.8.. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Transfer Characteristics Figure 9. Source to Drain Diode Forward Voltage vs Source Current Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) 8 6 4 I D = 6 A V DD = V V DD = 5 V V DD = V 6 8 4 3 Q g, GATE CHARGE (nc) 4 Figure. Gate Charge Characteristics T J = 5 o C T J = 5 o C T J = o C... t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) ID, DRAIN CURRENT (A) 3 f = MHz V GS = V. 3 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. Capacitance vs Drain to Source Voltage C iss C oss C rss ms THIS AREA IS LIMITED BY r DS(on) ms SINGLE PULSE ms. T J = MAX RATED s R θja = 55 o C/W DERIVED FROM s TEST DATA T A = 5 o C DC... V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Unclamped Inductive Switching Capability Figure 3. Forward Bias Safe Operating Area P (PK), PEAK TRANSIENT POWER (W) SINGLE PULSE R θja = 55 o C/W T A = 5 o C.5-3 - - t, PULSE WIDTH (sec) Figure 4. Single Pulse Maximum Power Dissipation Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
Typical Characteristics ( N-Channel) T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. SINGLE PULSE R θja = 55 o C/W (Note b).5-3 - - t, RECTANGULAR PULSE DURATION (sec) Figure 6. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
Typical Characteristics (continued) SyncFET TM Schottky body diode Characteristics Fairchild s SyncFET TM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 7 shows the reverses recovery characteristic of the FDMC78S. CURRENT (A) 5 5-5 4 8 6 TIME (ns) Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I DSS, REVERSE LEAKAGE CURRENT (A) - T J = 5 o C -3-4 -5-6 T J = o C T J = 5 o C -7 5 5 5 3 V DS, REVERSE VOLTAGE (V) Figure 7. FDMC78S SyncFET TM body diode reverse recovery characteristic Figure 8. SyncFET TM body diode reverses leakage versus drain-source voltage Fairchild Semiconductor Corporation www.fairchildsemi.com
Dimensional Outline and Pad Layout Fairchild Semiconductor Corporation www.fairchildsemi.com
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