Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings PD - 95513A IRFR37ZPbF IRFU37ZPbF HEXFET Power MOSFET V DSS = V R DS(on) = 18mΩ I D = 42A HEXFET is a registered trademark of International Rectifier. www.irf.com 1 G D S D-Pak IRFR37Z I-Pak IRFU37Z Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V (Silicon Limited) 56 I D @ T C = C Continuous Drain Current, V GS @ V 39 A I D @ T C = 25 C Continuous Drain Current, V GS @ V (Package Limited) 42 I DM Pulsed Drain Current c 220 P D @T C = 25 C Power Dissipation 140 W Linear Derating Factor 0.95 W/ C V GS Gate-to-Source Voltage ± 20 V E AS (Thermally limited) Single Pulse Avalanche Energyd 150 mj E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 200 I AR Avalanche Currentc See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy g mj T J Operating Junction and -55 to + 175 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (1.6mm from case ) lbfyin (1.1Nym) Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.05 R θja Junction-to-Ambient (PCB mount) i 40 C/W R θja Junction-to-Ambient 1 12/03/04
IRFR/U37ZPbF Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage V Conditions V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.088 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 15 18 mω V GS = V, I D = 33A e V GS(th) Gate Threshold Voltage 2.0 4.0 V V DS = V GS, I D = 250µA gfs Forward Transconductance 39 S V DS = 25V, I D = 33A I DSS Drain-to-Source Leakage Current 20 µa V DS = V, V GS = 0V 250 V DS = V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 na V GS = 20V Gate-to-Source Reverse Leakage -200 V GS = -20V Q g Total Gate Charge 69 I D = 33A Q gs Gate-to-Source Charge 15 nc V DS = 80V Q gd Gate-to-Drain ("Miller") Charge 25 V GS = V e t d(on) Turn-On Delay Time 14 V DD = 50V t r Rise Time 43 I D = 33A t d(off) Turn-Off Delay Time 53 ns R G = 6.8 Ω t f Fall Time 42 V GS = V e L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package and center of die contact S C iss Input Capacitance 2930 V GS = 0V C oss Output Capacitance 290 V DS = 25V C rss Reverse Transfer Capacitance 180 pf ƒ = 1.0MHz C oss Output Capacitance 1200 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 180 V GS = 0V, V DS = 80V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 430 V GS = 0V, V DS = 0V to 80V f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 56 MOSFET symbol D (Body Diode) A showing the I SM Pulsed Source Current 220 integral reverse G (Body Diode)Ãc p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 33A, V GS = 0V e t rr Reverse Recovery Time 35 53 ns T J = 25 C, I F = 33A, V DD = 50V Q rr Reverse Recovery Charge 41 62 nc di/dt = A/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com
I D, Drain-to-Source Current (Α) G fs, Forward Transconductance (S) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFR/U37ZPbF 0 VGS TOP 15V V 6.0V 5.0V 4.8V 4.5V 4.3V BOTTOM 4.0V 0 VGS TOP 15V V 6.0V 5.0V 4.8V 4.5V 4.3V BOTTOM 4.0V 4.0V 4.0V 60µs PULSE WIDTH Tj = 25 C 1 0.1 1 V DS, Drain-to-Source Voltage (V) 1 60µs PULSE WIDTH Tj = 175 C 0.1 0.1 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 T J = 175 C 80 T J = 25 C 60 T J = 25 C 40 T J = 175 C 20 1.0 V DS = 25V 60µs PULSE WIDTH 2 3 4 5 6 7 8 9 11 12 13 14 15 16 0 V DS = V 0 20 30 40 50 60 70 80 V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) IRFR/U37ZPbF 000 00 V GS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss 12.0.0 8.0 I D = 33A V DS = 80V V DS = 50V V DS = 20V 0 6.0 C oss C rss 4.0 2.0 1 0.0 0 20 30 40 50 60 70 80 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 0.00 0 OPERATION IN THIS AREA LIMITED BY R DS (on).00 T J = 175 C.00 µsec T J = 25 C 1.00 V GS = 0V 0. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V SD, Source-to-Drain Voltage (V) 1 0.1 Tc = 25 C Tj = 175 C Single Pulse 1msec msec 1 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
R DS(on), Drain-to-Source On Resistance (Normalized) IRFR/U37ZPbF 3.0 2.5 I D = 56A V GS = V 2.0 1.5 1.0 0.5-60 -40-20 0 20 40 60 80 120 140 160 180 T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Normalized On-Resistance vs. Temperature Thermal Response ( Z thjc ) 1 0.1 0.01 0.001 0.0001 D = 0.50 0.20 0. 0.05 0.02 0.01 R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ τ 2 τ 3 1 τ 2 τ 3 Ci= τi/ri Ci= i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Ri ( C/W) τi (sec) 0.576 0.000540 0.249 0.001424 0.224 0.007998 www.irf.com 5 τ C τ
V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) IRFR/U37ZPbF V DS L 15V DRIVER 700 600 500 I D TOP 3.4A 4.8A BOTTOM 33A R G 20V V GS tp D.U.T IAS 0.01Ω + - V DD A 400 300 Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS 200 0 25 50 75 125 150 175 Starting T J, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Q G Fig 12c. Maximum Avalanche Energy vs. Drain Current V Q GS Q GD 4.0 V G Charge Fig 13a. Basic Gate Charge Waveform 3.0 I D = 250µA 2.0 0 1K DUT L VCC 1.0-75 -50-25 0 25 50 75 125 150 175 200 T J, Temperature ( C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com
E AR, Avalanche Energy (mj) Avalanche Current (A) IRFR/U37ZPbF 0 Duty Cycle = Single Pulse 0.01 0.05 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses 0. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.pulsewidth 200 150 50 0 TOP Single Pulse BOTTOM 1% Duty Cycle I D = 33A 25 50 75 125 150 175 Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-5 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc Fig 16. Maximum Avalanche Energy I av = 2DT/ [1.3 BV Z th ] vs. Temperature E AS (AR) = P D (ave) t av www.irf.com 7
IRFR/U37ZPbF Driver Gate Drive Period P.W. Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current D.U.T. I SD Waveform Body Diode Forward Current di/dt Diode Recovery dv/dt V GS =V V DD Re-Applied Voltage Body Diode Forward Drop Ripple 5% I SD Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 8 www.irf.com
D-Pak (TO-252AA) Package Outline IRFR/U37ZPbF D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 AS S EMBL ED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S EMB LY LOT CODE IRFU120 916A 12 34 PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE 12 34 PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SITE CODE www.irf.com 9 IRFU120
IRFR/U37ZPbF I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) ) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S EMB LY LOT CODE IRFU120 919A 56 78 PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 19 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE IRFU120 56 78 PART NUMBER DATE CODE P = DES IGNAT E S LE AD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = ASSEMBLY SITE CODE www.irf.com
D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) IRFR/U37ZPbF TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by T Jmax, starting T J = 25 C, L = 0.28mH R G = 25Ω, I AS = 33A, V GS =V. Part not recommended for use above this value. ƒ Pulse width 1.0ms; duty cycle 2%. 16 mm C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. % tested to this value in production. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q1] market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.12/04 www.irf.com 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/