I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters G D S HEXFET Power MOSFET V DSS 4V R DS(on) typ. 2.2m max 2.7m 64A 2A I D (Silicon Limited) I D (Package Limited) Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free* RoHS Compliant, Halogen-Free S D G TO-22AB IRL4B25 G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL4B25 TO-22 Tube 5 IRL4B25 R DS(on), Drain-to -Source On Resistance (m ) 2 I D = 98A 75 5 Limited By Package 9 25 6 75 3 5 25 2 4 6 8 2 4 6 8 2 25 5 75 25 5 75 V GS, Gate -to -Source Voltage (V) T C, Case Temperature ( C) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
IRL4B25 Absolute Maximum Rating Symbol Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, VGS @ V (Silicon Limited) 64 I D @ T C = C Continuous Drain Current, V GS @ V (Silicon Limited) 6 I D @ T C = 25 C Continuous Drain Current, V GS @ V (Wire Bond Limited) 2 A I DM Pulsed Drain Current 656 P D @T C = 25 C Maximum Power Dissipation 43 W Linear Derating Factor.95 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 3 Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy 6 E AS (Thermally limited) Single Pulse Avalanche Energy 386 mj I AR Avalanche Current A See Fig 5, 6, 23a, 23b E AR Repetitive Avalanche Energy mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.5 R CS Case-to-Sink, Flat Greased Surface.5 C/W R JA Junction-to-Ambient 62 Static @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 4 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.33 V/ C Reference to 25 C, I D = 5mA 2.2 2.7 V R GS = V, I D = 98A DS(on) Static Drain-to-Source On-Resistance m 2.8 3.5 V GS = 4.5V, I D = 49A V GS(th) Gate Threshold Voltage. 2.4 V V DS = V GS, I D = µa. V DS =4 V, V GS = V I DSS Drain-to-Source Leakage Current µa 5 V DS =4V,V GS = V,T J =25 C Gate-to-Source Forward Leakage V I GSS na GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V R G Gate Resistance 2. Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 2A. Note that Current imitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-4) Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L =.33mH, R G = 5, I AS = 98A, V GS =V. I SD 98A, di/dt 5A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while VDS is rising from to 8% V DSS. R is measured at T J approximately 9 C. Limited by T Jmax, starting, L = mh, R G = 5, I AS = 28A, V GS =V. Pulse drain current is limited at 48A by source bonding technology. 2 www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
IRL4B25 Dynamic Electrical Characteristics @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 76 S V DS = V, I D = 98A Q g Total Gate Charge 56 84 I D = 98A Q gs Gate-to-Source Charge 5 V DS = 2V nc Q gd Gate-to-Drain Charge 3 V GS = 4.5V Q sync Total Gate Charge Sync. (Qg Qgd) 26 t d(on) Turn-On Delay Time 2 V DD = 2V t r Rise Time I D = 3A ns t d(off) Turn-Off Delay Time 63 R G = 2.7 t f Fall Time 62 V GS = 4.5V C iss Input Capacitance 5225 V GS = V C oss Output Capacitance 65 V DS = 25V C rss Reverse Transfer Capacitance 46 pf ƒ =.MHz, See Fig.7 C oss eff.(er) Effective Output Capacitance (Energy Related) 777 V GS = V, VDS = V to 32V C oss eff.(tr) Output Capacitance (Time Related) 963 V GS = V, VDS = V to 32V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol 64 (Body Diode) showing the A G Pulsed Source Current integral reverse 656 (Body Diode) p-n junction diode. I S I SM V SD Diode Forward Voltage.9.2 V,I S = 98A,V GS = V dv/dt Peak Diode Recovery dv/dt 4.3 V/ns T J = 75 C,I S = 98A,V DS = 4V t rr Reverse Recovery Time 27 V DD = 34V ns 29 I F = 98A, Q rr Reverse Recovery Charge 23 di/dt = A/µs nc 25 I RRM Reverse Recovery Current.5 A D S 3 www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRL4B25 3.5V VGS TOP 5V V 8.V 6.V 5.V 4.5V 4.V BOTTOM 3.5V 3.5V VGS TOP 5V V 8.V 6.V 5.V 4.5V 4.V BOTTOM 3.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 2.2 T J = 75 C.8 I D = 98A V GS = V.4. V DS = V 6µs PULSE WIDTH 2 4 6 8 V GS, Gate-to-Source Voltage (V)..6-6 -2 2 6 4 8 T J, Junction Temperature ( C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 4 2 I D = 98A V DS = 32V V DS = 2V VDS= 8V C iss 8 C oss C rss 6 4 2. V DS, Drain-to-Source Voltage (V) 2 4 6 8 2 4 Q G, Total Gate Charge (nc) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 4 www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
V (BR)DSS, Energy (µj) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRL4B25 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C µsec Limited By Package msec Drain-to-Source Breakdown Voltage (V) V GS = V...5..5 2. 2.5 3. 3.5 V SD, Source-to-Drain Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 52 Id = 5.mA 5 Fig. Maximum Safe Operating Area.6.5 msec Tc = 25 C DC Tj = 75 C Single Pulse.. V DS, Drain-toSource Voltage (V) 48.4 46.3 44.2 42. 4-6 -2 2 6 4 8 T J, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage. -5 5 5 2 25 3 35 4 45 V DS, Drain-to-Source Voltage (V) Fig 2. Typical C oss Stored Energy R DS (on), Drain-to -Source On Resistance (m ) 9 7 VGS = 3.5V VGS = 4.V VGS = 4.5V VGS = 8.V VGS = V 5 3 5 5 2 I D, Drain Current (A) Fig 3. Typical On-Resistance vs. Drain Current 5 www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
E AR, Avalanche Energy (mj) IRL4B25.. D =.5.2..5.2. Thermal Response ( Z thjc ) C/W. SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) Fig 4. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart = 25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 5. Avalanche Current vs. Pulse Width 8 6 4 2 8 6 4 2 TOP Single Pulse BOTTOM.% Duty Cycle I D = 98A 25 5 75 25 5 75 Starting T J, Junction Temperature ( C) Fig 6. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 5, 6: (For further info, see AN-5 at www.irf.com).avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = tav f Z thjc (D, t av ) = Transient thermal resistance, see Figures 4) PD (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 6 www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) I RRM (A) IRL4B25 2.5 2. 7 6 5 I F = 66A V R = 34V.5 4. ID = µa ID = 25µA ID =.ma ID =.A 3 2.5-75 -25 25 75 25 75 T J, Temperature ( C ) 2 4 6 8 di F /dt (A/µs) Fig 7. Threshold Voltage vs. Temperature Fig 8. Typical Recovery Current vs. dif/dt 7 6 5 I F = 98A V R = 34V 2 8 I F = 66A V R = 34V 4 3 6 2 4 2 2 4 6 8 2 4 6 8 di F /dt (A/µs) di F /dt (A/µs) Fig 9. Typical Recovery Current vs. dif/dt Fig 2. Typical Stored Charge vs. dif/dt 8 I F = 98A V R = 34V 6 4 2 2 4 6 8 di F /dt (A/µs) Fig 2. Typical Stored Charge vs. dif/dt 7 www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
IRL4B25 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 2V tp D.U.T I AS. + - V DD A I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Vds Id Vgs VDD Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform 8 www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
IRL4B25 TO-22AB Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information E X A M P L E : T H IS IS A N IR F L O T C O D E 7 8 9 ASSEM BLED O N W W 9, 2 IN TH E ASSEM BLY LIN E "C" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead - Free" IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E P A R T N U M B E R D A T E C O D E YEAR = 2 W EEK 9 LIN E C TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25
IRL4B25 Qualification Information Qualification Level Industrial (per JEDEC JESD47F) Moisture Sensitivity Level TO-22 N/A RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ www.irf.com 25 International Rectifier Submit Datasheet Feedback April 27, 25