Dual CATV Broadband High Linearity SiGe HBT Amplifier CGA-33Z DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-33Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA-33Z contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push-pull configuration. Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT InP HBT Amplifier Configuration 3 7 Features Lead-Free, RoHS Compliant, and Green Packaging Excellent CSO/CTB/XMOD Performance at +3dBmV Output Power Per Tone Dual Devices in Each SOIC- Package Simplify Push-Pull Configuration PC Board Layout MHz to 9MHz Operation Applications CATV Head End Driver and Predriver Amplifier CATV Line Driver Amplifier Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 3. db MHz. db MHz and MHz.. db 7MHz OIP, Tone Spacing=MHz 9. dbm MHz, P OUT per tone=+dbm 7. dbm MHz, P OUT per tone 7. 9. dbm MHz, P OUT per tone OIP 3, Tone Spacing=MHz 3. dbm MHz, P OUT per tone=+dbm 3. dbm MHz, P OUT per tone=+dbm 3. 3. dbm 7MHz, P OUT per tone=+dbm Output Power at db Compression. dbm MHz. dbm MHz.. dbm 7MHz Input Return Loss 7. dbm MHz dbm - 7MHz Output Return Loss. db MHz db - 7MHz Noise Figure. db MHz, Balun Insertion Loss Included.3 db MHz, Balun Insertion Loss Included.. db 7MHz, Balun Insertion Loss Included Device Operating Voltage 3.9..3 V Device Operating Current 3 ma Thermal Resistance C/W (Junction to Lead) RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners., RF Micro Devices, Inc. DS 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. of
Absolute Maximum Ratings Parameter Rating Unit Max Device Current (I D ) ma Max Device Voltage (VD) V Max RF Input Power + dbm Max Junction Temp (TJ) + C Operating Temp Range (TL) - to + C Max Storage Temp + C ESD Rating - Human Body Model (HBM) B Class Moisture Sensitivity Level 3 MSL *Note: Load condition, Z L =. Load condition, Z L =: VSWR. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D <(T J -T L )/R TH, j-l and T L =T LEAD Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective/9/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Specification Min. Typ. Max. Unit Condition Worst Case Over Band, CSO 7 dbc 79 Ch., Flat, +3dBmV Worst Case Over Band, CTB dbc 79 Ch., Flat, +3dBmV Worst Case Over Band, XMOD 3 dbc 79 Ch., Flat, +3dBmV S (db) - - - - - -3 Typical RF Performance: V S =V, I D =ma @ T L =+ C, R BIAS = Ohms, Push-Pull Configuration S (db) Input Return Loss vs. Frequency Gain vs. Frequency + C - C + C 3 7 9 + C - C + C 3 7 9 S (db) - - - - - - - - - - Output Return Loss vs. Frequency + C - C + C 3 7 9 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical of support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. DS
Typical RF Performance: V S =V, I D =ma @ T L =+ C, R BIAS = Ohms, Push-Pull Configuration IP3 vs. Temperature IP vs. Temperature IP3 (dbm) IM (dbc) NF (db) 3 3 -C C C.... 9 7 3 Second Harmonic vs. Pout and Frequency Data shown is typical at C MHz MHz MHz MHz 3 9 Pout (dbm) 3 Push-Pull Noise Figure MHz-9MHz Typical IP (dbm) IM3 (dbc) dbc 7 7 - C + C + C.... 9 7 3 Third Harmonic vs. Pout and Frequency Data shown is typical at C MHz MHz MHz MHz 3 9 Pout (dbm) 9 7 Push-Pull CTB/CSO/XMOD 3 dbmv/ch., 79 Ch., Flat 3 CTB CSO+ CSO- Xmod DS 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. 3 of
CSO/CTB/XMOD Performance: V S =V, I D =ma @ T L =+ C, R BIAS = Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels. dbc dbc Push-Pull CTB vs. Pout and Frequency 3dBmV 3dBmV 3dBmV 9 3dBmV dbmv dbmv 7 3 9 7 Push-Pull CSO- vs. Pout and Frequency 3dBmV 3dBmV 3dBmV 3dBmV dbmv dbmv 3 dbc dbc 9 7 Push-Pull XMOD vs. Pout and Frequency 3dBmV 3dBmV 3dBmV 3dBmV dbmv dbmv 3 9 7 Push-Pull CSO+ vs. Pout and Frequency 3dBmV 3dBmV 3dBmV 3dBmV dbmv dbmv 3 Note: CSO measurements > dbc can be limited by system noise. 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical of support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. DS
Typical RF Performance - Single Ended - Ohm System V S =V, I D =7mA (one amp biased), T L =+ C, R BIAS = Ohms Gain (db) Gain & Isolation vs. Frequency -3...... 3. 3.. Typical RF Performance - Single Ended - 37. Ohm System V S =V, I D =7mA (one amp biased), T L =+ C, R BIAS = Ohms Gain (db) Gain Isolation Gain & Isolation vs. Frequency Gain Isolation -3...... 3. 3.. - - - - - - - - - - - - - - Isolation (db) Isolation (db) db db - - - - - -3-3 S & S vs. Frequency S S -...... 3. 3.. - - - - - -3-3 S & S vs. Frequency -...... 3. 3.. S S DS 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. of
MHz to 7MHz Application Circuit Schematic Vs Macom ETC--3 RBIAS PF Tant.. PF pf pf nh pf pf,3 Amp Amp CGA-33 SOIC- PF Tant.. PF pf pf pf pf nh Macom ETC--3 MHz to 7MHz Evaluation Board Layout RF INPUT Balun ETC--3 pf pf Rbias uf Tant.,7 RBIAS Vs.uF pf pf nh pf Balun ETC--3 nh uf Tant. Rbias pf RF OUTPUT pf pf.uf ECB- Rev A ESOP- Push-Pull Eval Board 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical of support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. DS
MHz to MHz Application Circuit Schematic Vs RF INPUT Macom ETC-T RBIAS PF Tant.. PF pf pf P +. PF. PF Amp Amp CGA-33 SOIC- PF Tant.. PF pf pf,3. PF. PF P + Macom ETC-T MHz to MHz Evaluation Board Layout Balun ETC-T.uF.uF Rbias,7 uf Tant. uh uh uf Tant. RBIAS Vs.uF pf pf.uf Balun ETC-T.uF RF OUTPUT pf pf.uf ECB- Rev A ESOP- Push-Pull Eval Board Rbias DS 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. 7 of
S (db) PdB (dbm) Recommended Bias Resistor Values for ID= ma Supply Voltage (V S ) V 9V V V R BIAS : : R BIAS Power Rating /W /W W W R BIAS = (V S -V D ) I D Typical - MHz RF Performance: V S =V, I D =ma @ T L =+ C, Push-Pull Configuration Gain vs. Frequency 3 7 9 9 7 PdB and IP3 vs. Frequency PdB 3 3 7 9 IP3 39 3 37 3 3 IP3 (dbm) S and S (db) NF (db) - - - - - S S Return Loss vs. Frequency -3 3 7 9 7 3 Noise Figure vs. Frequency 3 7 9 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical of support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. DS
Pin Function Description RF IN Device. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic., 3 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF IN Device. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic. RF OUT/VCC Device. RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC-blocking capacitor should be used in most applications. The supply side of the bias network should be well bypassed., 7 GND Same as pins and 3. RF OUT/VCC Device. Same as pin. EPAD GND Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern. 3 Device Pin Out Suggested Pad Layout 7 PCB Pad Layout Dimensions in inches [millimeters] Sized for 3 mil thick FR- DS 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. 9 of
Package Drawing and Marking Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Lot Code CGA33 Tin-Lead Lot Code CGA33Z Lead Free Ordering Information Part Number Description Reel Size Devices/Reel CGA33ZSB pcs Sample Bag N/A N/A CGA33ZSQ pcs Sample Bag N/A N/A CGA33ZSR Dual CATV Broadband HBT AMP 7 pcs CGA33Z Dual CATV Broadband HBT AMP 7 pcs CGA33ZPCK- MHz to 7MHz Eval Bd & Loose Pieces N/A N/A CGA33ZPCK- MHz to MHz Eval Bd & Loose Pieces N/A N/A 7 Thorndike Road, Greensboro, NC 79-9 For sales or technical of support, contact RFMD at (+) 33-7-7 or sales-support@rfmd.com. DS