PD-95882 PDP Switch IRGP45 Features Key parameters optimized for PDP sustain & Energy recovery applications 4A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits Low temperature co-efficient of V CE (ON) ensures reduced power dissipation at operating junction temperatures Reverse voltage avalanche rating improves the robustness in sustain driver application Short fall & rise times for fast switching G C E n-channel V CES = 25V V CE(on) typ. =.64V @V GE = 5V, I C = 3A Description This IGBT is specifically designed for sustain & energy recovery application in plasma display panels. This IGBT features low V CE (ON) and fast switching times to improve circuit efficiency and reliability. Low temperature co-efficient of V CE (ON) makes this IGBT an ideal device for PDP sustain driver application. TO-247AC Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 25 V I C @ T C = 25 C Continuous Collector Current 4* A I C @ T C = C Continuous Collector Current 56 I CM Pulse Collector CurrentÃc 28 I LM Clamped Inductive Load current d 29 V GE Gate-to-Emitter Voltage ±2 V E ARV Reverse Voltage Avalanche Energy e 24 mj P D @ T C = 25 C Maximum Power Dissipation 33 W P D @ T C = C Maximum Power Dissipation 3 T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Solder Temperature Range, for sec. 3 (.63 in. (.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT.38 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz.) *Package limited to 6A. www.irf.com 7/5/4
IRGP45 Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 25 V V GE = V, I C = 25µA V (BR)ECS Emitter-to-Collector Breakdown Voltage f 8 V V GE = V, I C =.A V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 8.2 mv/ C V GE = V, I C = ma.64.9 I C = 3A V CE(on) Collector-to-Emitter Saturation Voltage 2.4 V I C = 56A V GE = 5V 2.6 I C = 4A, T J = 5 C See Fig. 2, 5 V GE(th) Gate Threshold Voltage 3. 6. V CE = V GE, I C = 25µA V GE(th) / T J Threshold Voltage temp. coefficient - mv/ C V CE = V GE, I C =.25mA gfe Forward Transconductance g 34 5 S V CE = V, I C = 56A I CES Zero Gate Voltage Collector Current 25 V GE = V, V CE = 25V 2. µa V GE = V, V CE = V 5 V GE = V, V CE = 25V, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 23 35 I C = 56A Q ge Gate-to-Emitter Charge (turn-on) 37 56 nc V CC = 2V See Fig. 8 Q gc Gate-to-Collector Charge (turn-on) 78 2 V GE = 5V t d(on) Turn-On delay time 37 T J = 25 C t r Rise time 35 ns I C = 3A, V CC = 8V t d(off) Turn-Off delay time 2 8 V GE = 5V, R G = 5.Ω t f Fall time 59 89 Energy losses include "tail" E on Turn-On Switching Loss 45 See Fig. 9,, 4 E off Turn-Off Switching Loss 25 µj E TS Total Switching Loss 7 t d(on) Turn-On delay time 35 T J = 5 C t r Rise time 35 ns I C = 3A, V CC = 8V t d(off) Turn-Off delay time 3 V GE = 5V, R G = 5.Ω t f Fall time 2 Energy losses include "tail" E TS Total Switching Loss 28 µj See Fig., 4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 465 V GE = V C oes Output Capacitance 48 pf V CC = 3V, See Fig. 7 C res Reverse Transfer Capacitance 92 f =.MHz Notes: Repetitive rating; V GE = 2V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 8%(V CES ), V GE = 2V, L = µh, R G = 5.Ω, (See fig. 3a). ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 2.5ms; duty factor.%. Pulse width 5.µs, single shot. 2 www.irf.com
I C, Collector-to-Emitter Current (A) Load Current ( A ) I C, Collector-to-Emitter Current (A) IRGP45 4 2 8 Triangular wave: Clamp voltage: 8% of rated For both: Duty cycle : 5% Tj = 25 C Tsink = 9 C Gate drive as specified Power Dissipation = 73W 6 4 Square wave: 6% of rated voltage 2 Ideal diodes. f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) T J = 5 C T J = 5 C T J = 25 C T J = 25 C V GE = 5V 2µs PULSE WIDTH.. V CE, Collecto-to-Emitter Voltage (V).. V CC = 5V 2µs PULSE WIDTH 2 4 6 8 2 4 6 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current (A) V CE, Collector-to Emitter Voltage (V) IRGP45 2 LIMITED BY PACKAGE 4. V GE = 5V 8µs PULSE WIDTH 8 3. I C = 2A 6 4 2 2. I C = 56A I C = 28A 25 5 75 25 5 T C, Case Temperature ( C). -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response ( Z thjc ).... D =.5.2..5.2. R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 3 τ 2 τ 3 Ci= τi/ri Ci i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-6 E-5.... t, Rectangular Pulse Duration (sec) τ C τ Ri ( C/W) τi (sec).96.35.96.229.23.28536 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
Total Swiching Losses (µj) Total Swiching Losses (µj) Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRGP45 V GS = V, f = MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc 6 4 2 V CES = 2V I C = 56A Cies 8 Coes 6 4 Cres 2 5 5 2 5 5 2 V CE, Collector-toEmitter-Voltage(V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 24 22 2 V CE = 2V V GE = 5V T J = 25 C I C = 56A 7 6 5 R G = 5.ΩÃ V GE = 5V I C = 2A 8 4 6 4 3 2 2 I C = 56A I C = 28A 8 5 5 2 25 3 R G, Gate Resistance (Ω) -55-5 45 95 45 T J, Juntion Temperature ( C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Swiching Losses (µj) I C, Collector-to-Emitter Current (A) IRGP45 6 5 R G = 5.Ω T J = 5 C V CE = 2V V GE = 2V T J = 25 4 V GE = 5V 3 2 SAFE OPERATING AREA 2 4 6 8 2 I C, Collecto-to-Emitter (A) V DS, Drain-to-Source Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6 www.irf.com
IRGP45 5V c V L V * C D.U.T. d - 48V 48µF 96V R L = 48V 4 X I C@25 C * Driver same type as D.U.T.; Vc = 8% of Vce(max) * Note: Due to the 5V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 5V V c L Driver* d V C D.U.T. e Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 48V c d 9% e % V C 9% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% % t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) www.irf.com 7
IRGP45 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$3/( 7+,6,6$,5)3( :,7+$66(%/< /27&2'( $66(%/('2::,7+($66(%/</,(+ Note: "P" in assembly line position indicates "Lead-Free",7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/<,5)3( Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$578%(5 '$7(&2'( <($5 /27&2'( :((. /,(+ TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information.6/4 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/