FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω (Typ.) @ = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability Description UniFET TM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D G D G S TO-247 D S TO-3PN Absolute Maximum Ratings T C = 25 o C unless otherwise noted. G S Symbol Parameter FDH5N5-F133 / FDA5N5 Unit S Drain-Source Voltage 5 V Drain Current - Continuous (T C = 25 C) - Continuous (T C = 1 C) M Drain Current - Pulsed (Note 1) 192 A S Gate-Source voltage ±2 V E AS Single Pulsed Avalanche Energy (Note 2) 1868 mj I AR Avalanche Current (Note 1) 48 A E AR Repetitive Avalanche Energy (Note 1) 62.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 2 V/ns P D Power Dissipation (T C = 25 C) - Derate Above 25 C T J, T STG Operating and Storage Temperature Range -55 to +15 C T L Maximum Lead Temperature for Soldering, 3 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDH5N5-F133 / FDA5N5 Unit R θjc Thermal Resistance, Junction-to-Case, Max..2 C/W R θja Thermal Resistance, Junction-to-Ambient, Max. 4 48 3.8 625 5 A A W W/ C 212 Semiconductor Components Industries, LLC. September-217, Rev. 3 Publication Order Number: FDH5N5-F133/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDH5N5-F133 FDH5N5 TO-247 Tube N/A N/A 3 units FDA5N5 FDA5N5 TO-3PN Tube N/A N/A 3 units Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = V, = 25 μa 5 -- -- V ΔBS Breakdown Voltage Temperature / ΔT J Coefficient = 25 μa, Referenced to 25 C --.5 -- V/ C SS Zero Gate Voltage Drain Current = 5 V, = V = 4 V, T C = 125 C I GSSF Gate-Body Leakage Current, Forward = 2 V, = V -- -- 1 na I GSSate-Body Leakage Current, Reverse = -2 V, = V -- -- -1 na On Characteristics (th) Gate Threshold Voltage =, = 25 μa 3. -- 5. V R DS(on) Static Drain-Source On-Resistance = 1 V, = 24 A --.89.15 Ω g FS Forward Transconductance = 4 V, = 48 A -- 2 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = V, -- 4979 646 pf C oss Output Capacitance f = 1 MHz -- 76 1 pf C rss Reverse Transfer Capacitance -- 5 65 pf C oss Output Capacitance = 4 V, = V, f = 1 MHz -- 161 -- pf C oss(eff.) Effective Output Capacitance = V to 4 V, = V -- 342 -- pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 25 V, = 48 A, -- 15 22 ns t r Turn-On Rise Time = 1 V, = 25 Ω -- 36 73 ns t d(off) Turn-Off Delay Time -- 225 46 ns t f Turn-Off Fall Time (Note 4) -- 23 47 ns Q g Total Gate Charge = 4 V, = 48 A -- 15 137 nc Q gs Gate-Source Charge = 1 V -- 33 -- nc Q gd Gate-Drain Charge (Note 4) -- 45 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A V SD Drain-Source Diode Forward Voltage = V, I S = 48 A -- -- 1.4 V t rr Reverse Recovery Time = V, I S = 48 A, -- 58 -- ns Q rr Reverse Recovery Charge di F /dt =1 A/μs -- 1 -- μc -- -- -- -- 25 25 μa μa Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1.46 mh, I AS = 48 A, V DD = 5 V, = 25 Ω, starting T J = 25 C. 3. I SD 48 A, di/dt 2 A/μs, V DD BS, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics R DS(ON) [Ω],, Drain Current [A] Drain-Source On-Resistance Figure 1. On-Region Characteristics 1 2 Top : 15. V 1. V 8. V 7. V 6.5 V 6. V 1 1 Bottom : 5.5 V 1 1-1 1-1 1 1 1, Drain-Source Voltage [V] 1. 25μs Pulse Test 2. T C = 25 o C Figure 2. Transfer Characteristics.1 4 5 6 7 8 9 1, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue.4.3.2.1 = 1V. 25 5 75 1 125 15 175, Drain Current [A] = 2V Note : T J = 25 o C, Drain Current [A] R, Reverse Drain Current [A] 1 1 1 16 12 8 4 15 o C 25 o C -55 o C 15 o C 25 o C 1. = 4V 2. 25μs Pulse Test 1. = V 2. 25μs Pulse Test.2.4.6.8 1. 1.2 1.4 1.6 V SD, Source-Drain Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitance [pf] 12, 1, 8, 6, 4, 2, C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = V 2. f = 1 MHz 1-1 1 1 1 1 2 C oss C iss, Drain-Source Voltage [V], Gate-Source Voltage [V] 12 1 8 6 4 2 = 1V = 25V = 4V Note : = 48A 2 4 6 8 1 12 Q G, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1..9 1. = V 2. = 25 μa.8-1 -5 5 1 15 2 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 1 3 1 2 1 1 1 1. T C = 25 o C 2. T J = 15 o C 3. Single Pulse Operation in This Area is Limited by R DS(on) DC 1 us 1 us 1 ms 1 ms R DS(ON), (Normalized), Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature Drain-Source On-Resistance 2.5 2. 1.5 1..5. -1-5 5 1 15 2 T J, Junction Temperature [ o C] Figure 1. Maximum Drain Current vs. Case Temperature 5 4 3 2 1 1. = 1 V 2. = 24 A 1-1 1 1 1 1 2 1 3, Drain-Source Voltage [V] 25 5 75 1 125 15 T C, Case Temperature [ o C] Figure 11. Typical Drain Current Slope Figure 12. Typical Drain-Source Voltage vs. Gate Resistance Slope vs. Gate Resistance di/dt [A/μS] 4, 3,5 3, 2,5 2, 1,5 1, di/dt(off) di/dt(on) 1. = 4 V 2. = 12 V 3. = 25A 4. T J = 125 o C dv/dt [V/nS] 45 4 35 3 25 2 15 1 dv/dt(off) dv/dt(on) 1. = 4 V 2. = 12 V 3. = 25A 4. T J = 125 o C 5 5 5 1 15 2 25 3 35 4 45 5, Gate resistance [Ω] 5 1 15 2 25 3 35 4 45 5, Gate resistance [Ω] 4
Typical Performance Characteristics (Continued) Energy [μj] Figure 13. Typical Switching Losses vs. Gate Resistance 1, 8 6 4 2 1. = 4 V 2. = 12 V 3. = 25A 4. T J = 125 o C 5 1 15 2 25 3 35 4 45 5, Gate resistance [Ω] Z θjc Z (t), θjc (t), Thermal Thermal Response Response [ o C/W] Eoff Eon Figure 15. Transient Thermal Resistance Curve 1-1 1-2 D=.5.2.1.5.2.1 single pulse Figure 14. Unclamped Inductive Switching Capability I AS, Avalanche Current [A] 1 1 Starting T J = 15 o C 1. If R = Ω t AV = (L)(I AS )/(1.3 Rated BS - V DD ) 2. If R Ω t AV = (L/R)In[(I AS x R)/(1.3 Rated BS - V DD )+1] Starting T J = 25 o C 1.1.1 1 1 1 1. Z θjc (t) =.2 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) P DM t 1 t 2 t AV, Time In Avalanche [ms] 1-3 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Square Wave Pulse Duration [sec] 5
12V 2nF I G = const. 3mA 5KΩ Same Type as DUT 3nF V GS 1V R L V DS 9% Q g Q gs Q gd DUT Charge Figure 16. Gate Charge Test Circuit & Waveform V DD V 1 DUT 1% t d(on) t r t d(off) tf t on t off Figure 17. Resistive Switching Test Circuit & Waveforms L E AS = ---- 1 LI 2 2 AS BS -------------------- BS -V DD BS I AS V DD (t) V 1 DUT V DD (t) t p Figure 18. Unclamped Inductive Switching Test Circuit & Waveforms t p Time 6
DUT I SD Driver + _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 1V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 19. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
Mechanical Dimensions Figure 2. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 8
Mechanical Dimensions Figure 21. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 9
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