R5005CNX Nch 500V 5A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 1.6Ω I D ±5A P D 40W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant loutline TO-220FM linner circuit lpackaging specifications Packing lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500 labsolute maximum ratings (T a = 25 C) Bulk Reel size (mm) - Taping code - Marking R5005CNX Parameter Symbol Value Unit Drain - Source voltage V DSS 500 V Continuous drain current T C = 25 C I D *1 ±5 A T C = 100 C I D *1 ±2.3 A Pulsed drain current I D,pulse *2 ±20 A Gate - Source voltage V GSS ±30 V Avalanche energy, single pulse E AS *3 1.6 mj Avalanche energy, repetitive E AR *4 1.3 mj Avalanche current I AR *3 2.5 A Power dissipation (T c = 25 C) P D 40 W Junction temperature T j 150 Range of storage temperature T stg -55 to +150 Reverse diode dv/dt dv/dt 15 V/ns 2014 ROHM Co., Ltd. All rights reserved. 1/13 20131105 - Rev.002
labsolute maximum ratings Parameter Symbol Conditions Values Unit Drain - Source voltage slope dv/dt lthermal resistance Parameter Symbol V DS = 400V, I D = 5A 50 V/ns T j = 125 Values Min. Typ. Max. Thermal resistance, junction - case R thjc - - 3.13 /W Thermal resistance, junction - ambient R thja - - 70 /W Soldering temperature, wavesoldering for 10s T sold - - 265 lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Drain - Source breakdown voltage V (BR)DSS V GS = 0V, I D = 1mA 500 - - V Drain - Source avalanche breakdown voltage V (BR)DS V GS =, I D = 2.5A - 580 - V Zero gate voltage drain current V DS = 500V, V GS = 0V I DSS T j = 25 C - 0.1 100 T j = 125 C - - 1000 Gate - Source leakage current I GSS V GS = ±30V, V DS = 0V - - ±10 μa Gate threshold voltage V GS(th) V DS = 10V, I D = 1mA 2.5-4.5 V Static drain - source on - state resistance R DS(on) *6 Unit Unit V GS = 10V, I D = 2.5A T j = 25 C - 1.3 1.6 Ω T j = 125 C - 2.85 - Gate input resistance R G f = 1MHz, open drain - 7.4 - Ω μa 2014 ROHM Co., Ltd. All rights reserved. 2/13 20131105 - Rev.002
lelectrical characteristics (T a = 25 C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance g *6 fs V DS = 10V, I D = 2.5A 1.5 2.8 - S Input capacitance C iss V GS = 0V - 320 - Output capacitance C oss V DS = 25V - 180 - Reverse transfer capacitance C rss f = 1MHz - 15 - Effective output capacitance, C energy related o(er) - 15.5 - V GS = 0V, pf Effective output capacitance, V DS = 0V to 400V C time related o(tr) - 43.1 - Turn - on delay time t *6 d(on) V DD 250V, V GS = 10V - 20 - Rise time t r *6 I D = 2.5A - 25 - Turn - off delay time t d(off) *6 R L = 100Ω - 40 80 Fall time t *6 f R G = 10Ω - 20 40 lgate charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Q *6 g V DD 250V - 10.8 - Gate - Source charge Q *6 gs I D = 5A - 3.2 - Gate - Drain charge Q *6 gd V GS = 10V - 4.4 - Gate plateau voltage V (plateau) V DD 250V, I D = 5A - 6.5 - V *1 Limited only by maximum temperature allowed. *2 Pw 10μs, Duty cycle 1% *3 L 500μH, V DD =50V, R G =25Ω, starting T j =25 C *4 L 500μH, V DD =50V, R G =25Ω, starting T j =25 C, f=10khz *5 Reference measurement circuits Fig.5-1. *6 Pulsed pf ns Unit nc 2014 ROHM Co., Ltd. All rights reserved. 3/13 20131105 - Rev.002
lbody diode electirical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Inverse diode continuous, forward current Inverse diode direct current, pulsed I S *1 T C = 25 Values Min. Typ. Max. Unit - - 5 A I SM *2 - - 20 A Forward voltage V SD *6 V GS = 0V, I S = 5A - - 1.5 V Reverse recovery time t *6 rr - 300 - ns I S = 5A Reverse recovery charge Q *6 rr - 1.94 - μc di/dt = 100A/μs Peak reverse recovery current I *6 rrm - 12.9 - A Peak rate of fall of reverse recovery current ltypical transient thermal characteristics di rr /dt T j = 25-140 - A/μs Symbol Value Unit Symbol Value Unit R th1 0.484 C th1 0.00111 R th2 1.46 K/W C th2 0.0103 R th3 2.23 C th3 0.443 Ws/K 2014 ROHM Co., Ltd. All rights reserved. 4/13 20131105 - Rev.002
lelectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 2014 ROHM Co., Ltd. All rights reserved. 5/13 20131105 - Rev.002
lelectrical characteristic curves Fig.4 Avalanche Current vs. Inductive Load Fig.5 Avalanche Power Losses Fig.6 Avalanche Energy Derating Curve vs. Junction Temperature 2014 ROHM Co., Ltd. All rights reserved. 6/13 20131105 - Rev.002
lelectrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) Fig.9 Tj = 150 C Typical Output Characteristics (I) Fig.10 Tj = 150 C Typical Output Characteristics (II) 2014 ROHM Co., Ltd. All rights reserved. 7/13 20131105 - Rev.002
lelectrical characteristic curves Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics Fig.13 Gate Threshold Voltage vs. Fig.14 Transconductance vs. Drain Current Junction Temperature 2014 ROHM Co., Ltd. All rights reserved. 8/13 20131105 - Rev.002
lelectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 2014 ROHM Co., Ltd. All rights reserved. 9/13 20131105 - Rev.002
lelectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics 2014 ROHM Co., Ltd. All rights reserved. 10/13 20131105 - Rev.002
lelectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs. Inverse Diode Forward Current 2014 ROHM Co., Ltd. All rights reserved. 11/13 20131105 - Rev.002
lmeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.3-1 Avalanche Measurement Circuit Fig.4-1 dv/dt Measurement Circuit Fig.5-1 di/dt Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-2 Avalanche Waveform Fig.4-2 dv/dt Waveform Fig.5-2 di/dt Waveform 2014 ROHM Co., Ltd. All rights reserved. 12/13 20131105 - Rev.002
ldimensions 2014 ROHM Co., Ltd. All rights reserved. 13/13 20131105 - Rev.002
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