IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low V F diode 13Vpk repetitive transient capacity % of the parts tested for I LM Positive V CE (ON) temperature co-efficient Tight parameter distribution Lead-free package G G C E n-channel V CES = 12V I C = 15A, T C = C T J(MAX) = 15 C V CE(ON) typ. = 1.95V G Benefits Device optimized for induction heating and soft switching applications High efficiency due to low V CE(ON), low switching losses and ultra-low V F Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI E C G IRG7PH28UD1PbF TO-247AC C E G IRG7PH28UD1MPbF TO-247AD G C E Gate Collector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH28UD1PbF TO-247AC Tube 25 IRG7PH28UD1PbF IRG7PH28UD1MPbF TO-247AD Tube 25 IRG7PH28UD1MPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 12 V V (BR) Transient Repetitive Transient Collector-to-Emitter Voltage 13 I C @ T C = 25 C Continuous Collector Current 3 I C @ T C = C Continuous Collector Current 15 I CM Pulse Collector Current, V GE = 15V I LM Clamped Inductive Load Current, V GE = 2V 6 A I F @ T C = 25 C Diode Continuous Forward Current 3 I F @ T C = C Diode Continuous Forward Current 15 I FM Diode Maximum Forward Current 6 V GE Continuous Gate-to-Emitter Voltage ±3 V P D @ T C = 25 C Maximum Power Dissipation 115 W P D @ T C = C Maximum Power Dissipation 46 T J Operating Junction and -55 to +15 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (1.1 N m) 1 www.irf.com 212 International Rectifier January 8, 213
Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Junction-to-Case (IGBT) 1.9 R θjc (Diode) Junction-to-Case (Diode) 1.35 C/W R θcs Case-to-Sink (flat, greased surface).24 R θja Junction-to-Ambient (typical socket mount) 4 Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V V GE = V, I C = µa V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 1.4 V/ C V GE = V, I C = 1mA (25 C-15 C) V CE(on) Collector-to-Emitter Saturation Voltage 1.95 2.3 V I C = 15A, V GE = 15V, T J = 25 C 2.4 I C = 15A, V GE = 15V, T J = 15 C V GE(th) Gate Threshold Voltage 3. 6. V V CE = V GE, I C = 35µA gfe Forward Transconductance 13 S V CE = 5V, I C = 15A, PW = 2µs I CES Collector-to-Emitter Leakage Current 1. µa V GE = V, V CE = 12V V GE = V, V CE = 12V, T J = 15 C V FM Diode Forward Voltage Drop 1.1 1.2 V I F = 15A 1. I F = 15A, T J = 15 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±3V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 6 9 I C = 15A Q ge Gate-to-Emitter Charge (turn-on) 15 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) 27 4 V CC = 6V E off Turn-Off Switching Loss 543 766 µj I C = 15A, V CC = 6V, V GE = 15V R G = 22, L = 1.mH, T J = 25 C t d(off) Turn-Off delay time 229 ns Energy losses include tail & diode t f Fall time 62 reverse recovery E off Turn-Off Switching Loss 939 µj I C = 15A, V CC = 6V, V GE =15V R G = 22, L = 1.mH, T J = 15 C t d(off) Turn-Off delay time 272 ns Energy losses include tail & diode t f Fall time 167 reverse recovery C ies Input Capacitance 116 V GE = V C oes Output Capacitance 55 pf V CC = 3V C res Reverse Transfer Capacitance 3 f = 1.Mhz T J = 15 C, I C = 6A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 96V, Vp 12V Rg = 22, V GE = +2V to V Notes: V CC = 8% (V CES ), V GE = 2V, L = 25µH, R G = 22. Pulse width limited by max. junction temperature. Refer to AN-86 for guidelines for measuring V (BR)CES safely. R is measured at T J of approximately 9 C. FBSOA operating conditions only. V GE = V, T J = 75 C, PW µs. 2 www.irf.com 212 International Rectifier January 8, 213
I CE (A) I CE (A) V GE(th), Gate Threshold Voltage I C (A) I C (A) P tot (W) IRG7PH28UD1PbF/IRG7PH28UD1MPbF 3 12 25 2 8 15 6 4 5 2 25 5 75 125 15 T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 4.2 4. I C = 35µA 25 5 75 125 15 T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature 3.8 3.6 3.4 3.2 3. 2.8 2.6 25 5 75 125 15 T J, Temperature ( C) Fig. 3 - Typical Gate Threshold Voltage vs. Junction Temperature 6 1 6 Fig. 4 - Reverse Bias SOA T J = 15 C; VGE = 2V 5 5 4 3 2 V GE = 18V V GE = 15V V GE = 12V V GE = V V GE = 8.V 4 3 2 V GE = 18V V GE = 15V V GE = 12V V GE = V V GE = 8.V 2 4 6 8 2 4 6 8 Fig. 5 - Typ. IGBT Output Characteristics TJ = -4 C; tp = 2µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25 C; tp = 2µs 3 www.irf.com 212 International Rectifier January 8, 213
I CE (A) I CE (A) I F (A) IRG7PH28UD1PbF/IRG7PH28UD1MPbF 6 V GE = 18V 5 V GE = 15V V GE = 12V 4 3 V GE = V V GE = 8.V 2 1 25 C 15 C 2 4 6 8 Fig. 7 - Typ. IGBT Output Characteristics T J = 15 C; tp = 2µs 12.1.2.4.6.8 1. 1.2 1.4 1.6 1.8 V F (V) Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 12 8 6 I CE = 7.5A I CE = 15A I CE = 3A 8 6 I CE = 7.5A I CE = 15A I CE = 3A 4 4 2 2 5 15 2 5 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. - Typical V CE vs. V GE T J = 25 C 12 7 6 8 6 4 2 I CE = 7.5A I CE = 15A I CE = 3A 5 4 3 2 T J = 15 C T J = 25 C 5 15 2 V GE (V) 4 5 6 7 8 9 11 12 V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 15 C Fig. 12 - Typ. Transfer Characteristics V CE = 5V; tp = 2µs 4 www.irf.com 212 International Rectifier January 8, 213
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) IRG7PH28UD1PbF/IRG7PH28UD1MPbF 2 16 td OFF 12 E OFF t F 8 4 5 15 2 25 3 5 15 2 25 3 I C (A) I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 15 C; L = 1.mH; V CE = 6V, R G = 22 ; V GE = 15V 18 Fig. 14 - Typ. Switching Time vs. I C T J = 15 C; L = 1.mH; V CE = 6V, R G = 22 ; V GE = 15V 16 td OFF E OFF 14 t F 12 8 2 4 6 8 2 4 6 8 Rg ( ) R G ( ) Fig. 15 - Typ. Energy Loss vs. R G T J = Fig. 16 - Typ. Switching Time vs. R G T J = 15 C; L = 1.mH; V CE = 6V, I CE = 15A; V GE = 15V 16 14 V CES = 6V Cies 12 V CES = 4V 8 Coes 6 Cres 4 2 1 2 3 4 5 6 2 3 4 5 6 7 Q G, Total Gate Charge (nc) Fig. 17 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 18 - Typical Gate Charge vs. V GE I CE = 15A 5 www.irf.com 212 International Rectifier January 8, 213
Thermal Response ( Z thjc ) 1.1.1 D =.5.2..5.2.1 SINGLE PULSE.282479.1715.1 ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) J J 1 1 2 2 3 3 Ci= i Ri Ci= i Ri R 1 R 2 R 3 R 1 R 2 R 3 R 4 R 4 C C 4 4 Ri ( C/W) Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) i (sec).15352.8.36775.223.431394.2475 1 D =.5 Thermal Response ( Z thjc ).1.1.2..5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 3 R 1 R 2 R 3 J J 1 1 2 2 3 3 Ci= i Ri Ci= i Ri R 4 R 4 C C 4 4 Ri ( C/W) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) Fig. 2 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) i (sec).756.5.56517.677.54552.3514.2585.19551 6 www.irf.com 212 International Rectifier January 8, 213
L 1K DUT L VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L C force K -5V Rg DUT / DRIVER VCC G force D1 DUT 22K.75µF C sense E sense Switching Loss E force Fig.C.T.3 - Switching Loss Circuit 8 7 6 5 tf Fig.C.T.4 - BVCES Filter Circuit 4 35 3 25 4 3 9% I CE 2 15 I CE (A) 2 5% I CE 5% V CE Eoff Loss - -.5.5 1 time(µs) 5-5 Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 15 C using Fig. CT.3 7 www.irf.com 212 International Rectifier January 8, 213
TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 2/26/21 EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 21 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 135H 56 57 PART NUMBER DATE CODE YEAR 1 = 21 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com 212 International Rectifier January 8, 213
TO-247AD Package Outline Dimensions are shown in millimeters (inches) E2/2 E A A A2 "A" Q E2 2X D B L1 "A" L SEE VIEW "B" 2x b2 b4 e 3x b Ø. 2x LEAD TIP B A c A1 Ø. Ø P B A -A- S THERMAL PAD D1 VIEW: "B" PLATING BASE METAL Ø. E1 B A (c) VIEW: "A" - "A" (b, b2, b4) SECTION: C-C, D-D, E-E TO-247AD Part Marking Information EXAM PLE: THIS IS AN IRGP3B12KD-E WITH ASSEMBLY LOT CODE 5657 ASSEM BLED ON W W 35, 2 IN THE ASSEMBLY LINE "H" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead-Free" PART NUMBER IN T E R N A T IO N A L RECTIFIER LOGO 35H 5 6 5 7 DATE CODE ASSEMBLY YEAR = 2 LOT CODE WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com 212 International Rectifier January 8, 213
Qualification Information Qualification Level Industrial (per JEDEC JESD47F) Moisture Sensitivity Level TO-247AC N/A RoHS Compliant TO-247AD Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Yes N/A IR WORLD HEADQUARTERS: 1 N. Sepulveda Blvd., El Segundo, California 9245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ www.irf.com 212 International Rectifier January 8, 213
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IRG7PH28UD1PBF IRG7PH28UD1MPBF