3A, 50V V High Efficient Surface Mount Rectifier

Similar documents
1A, 50V - 600V Surface Mount Ultrafast Power Rectifier

2A, 50V - 600V Surface Mount Super Fast Rectifier

5A, 20V - 150V Surface Mount Schottky Barrier Rectifier

3A, 20V - 200V Surface Mount Schottky Barrier Rectifier

2A, 100V - 200V Surface Mount Ultra Fast Rectifier

1A, 50V V Glass Passivated Rectifier

2A, 50V V High Efficient Surface Mount Rectifier

8A, 400V V Surface Mount Glass Passivated Rectifier

0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier

2A, 1000V Glass Passivated Bridge Rectifier

5A, 50V V Surface Mount Rectifier

3A, 50V - 600V Surface Mount Ultrafast Power Rectifier

0.8A, 600V V Glass Passivated Bridge Rectifier

2A, 800V V Glass Passivated High Efficient Rectifier

5A, 20V - 200V Surface Mount Schottky Barrier Rectifier

3A, 20V - 200V Surface Mount Schottky Barrier Rectifier

8A, 20V - 100V Surface Mount Schottky Barrier Rectifier

4 1N4001G-K - 1N4007G-K Taiwan Semiconductor. 1A, 50V V Glass Passivated Rectifier

3A, 20V - 200V Surface Mount Schottky Barrier Rectifier

4 1N5400G-K - 1N5408G-K Taiwan Semiconductor. 3A, 50V V Glass Passivated Rectifier

3A, 45V - 60V Trench Schottky Rectifier

2A, 600V Surface Mount Super Fast Rectifier

1A, 400V ESD Capability Rectifier

2A, 50V - 600V Glass Passivated Super Fast Rectifier

100mA, 75V Switching Diode

1.5A, 1000V Miniature Fast Recovery Glass Passivated Surface Bridge Rectifier

10A, 100V - 200V Trench Schottky Rectifier

20A, 100V - 200V Trench Schottky Rectifier

Glass Passivated Bridge Rectifier

3A, 400V V Glass Passivated Bridge Rectifier

CREAT BY ART 1A, 30V - 60V Surface Mount Schottky Barrier Rectifiers V RRM I F(AV)

1.5A, 200V V Surface Mount Rectifiers

20A, 300V Trench Schottky Rectifier

200mW High Speed SMD Switching Diode

200mW, V High Voltage SMD Switching Diode

10A, 100V - 200V Trench Schottky Rectifier

Trench Schottky Rectifier

5W, 15V Surface Mount Zener Diode

3W, 11V - 200V Surface Mount Silicon Zener Diode

30A, 100V - 200V Trench Schottky Rectifiers

Trench Schottky Rectifier

6600W, 10V 43V Surface Mount Transient Voltage Suppressor

200W, 5V - 100V Surface Mount Transient Voltage Suppressor

200W, 5V - 100V Surface Mount Transient Voltage Suppressor

Glass Passivated Bridge Rectifiers

1W, 6.8V - 220V Voltage Regulator Diode

225mW SMD Switching Diode

400W, 10V - 100V Surface Mount Transient Voltage Suppressor


Fast Switching Plastic Rectifier

1SMA4737-1SMA200Z Taiwan Semiconductor

Trench Schottky Rectifier

300mW, NPN Small Signal Transistor

General Purpose Plastic Rectifier

Dual Common-Cathode Ultrafast Soft Recovery Rectifier

SMB10J SERIES Taiwan Semiconductor

PARAMETER SYMBOL TESD5V0V4UA UNIT Marking code on the device

500mW High Speed SMD Switching Diode

5000W, 16V - 100V Surface Mount Transient Voltage Suppressor

Surface Mount Schottky Barrier Rectifiers

0.3W, PNP Plastic-Encapsulate Transistor

High Voltage Ultrafast Rectifier

High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

5A, 100V - 150V Trench Schottky Rectifiers

SMD Photovoltaic Solar Cell Protection Rectifier

Ultrafast Avalanche SMD Rectifier

Ultrafast Avalanche SMD Rectifier

Ultrafast Avalanche SMD Rectifier

High Voltage Glass Passivated Junction Plastic Rectifier

Surface Mount Silicon Zener Diodes

P6KE SERIES Taiwan Semiconductor

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier

High Current Density Surface Mount Glass Passivated Rectifiers

P4KE SERIES Taiwan Semiconductor

Schottky Barrier Rectifier

High Current Density Surface Mount Ultrafast Rectifiers

High Current Density Surface Mount Glass Passivated Rectifiers

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Glass Passivated Rectifier

SA SERIES Taiwan Semiconductor

Surface Mount Ultrafast Plastic Rectifier

25A, 600V - 800V Low VF- Low Noise Single-Phase Single In-Line Bridge Rectifiers

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier

General Purpose Plastic Rectifier

300mW, NPN Small Signal Transistor

BZW04 SERIES Taiwan Semiconductor

Surface-Mount Glass Passivated Rectifier

BZW06 SERIES Taiwan Semiconductor

Surface Mount Ultrafast Plastic Rectifier

1W, 10V - 200V Glass Passivated Junction Silicon Zener Diodes

Dual Common-Cathode Ultrafast Rectifier

Surface Mount Fast Avalanche Rectifiers

Glass Passivated Junction Plastic Rectifier

High Voltage Ultrafast Avalanche SMD Rectifiers

Dual Common Cathode Ultrafast Plastic Rectifier

Ultrafast Rectifier FEATURES

Surface Mount Standard Rectifiers

Fast Switching Avalanche Surface Mount Rectifiers

Ultrafast Rectifier V AC 1500 V

Transcription:

4 3AB - 3MB 3A, 50-0 High Efficient Surface Mount Rectifier FEATURES Low power loss, high efficiency Low forward voltage drop Low profile package Fast switching for high efficiency Ideal for automated placement Glass passivated junction chip Fast switching for high efficiency Compliant to Ro Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 KEY PARAMETERS PARAMETER ALUE UNIT I F(A) 3 A RRM 50-0 I FSM A T J MAX 150 C Package DO-214AA (SMB) Configuration Signal Die APPLICATIONS Switching mode power supply (SMPS) Adapters Monitor T MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94-0 flammability rating Moisture seitivity level: level 1, per J-STD-020 Packing code with suffix "G" mea green compound (halogen-free) Part no. with suffix H mea AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.093 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER Marking code on the device SYMBOL 3AB 3AB 3BB 3BB 3DB 3DB 3FB 3FB 3GB 3GB 3JB 3JB 3KB 3KB 3MB UNIT Repetitive peak reverse voltage RRM 50 200 300 400 600 800 0 Reverse voltage, total rms value R(RMS) 35 70 140 210 280 420 560 700 Maximum DC blocking voltage DC 50 200 300 400 600 800 0 Forward current I F(A) 3 A Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode I FSM A Junction temperature T J - 55 to +150 C Storage temperature T STG - 55 to +150 C 3MB 1 ersion:k1701

4 3AB - 3MB THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R ӨJA 60 C/W ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage per diode (1) 3AB 3BB 3DB - 1.0 3FB 3GB I F = 3A,T J = 25 C F - 1.3 3JB 3KB 3MB Reverse current @ rated R per diode (2) T J =25 C I R - 10 μa T J = C I R - 250 μa Junction capacitance Reverse recovery time Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 3AB 3DB 80 - pf 3FB - pf 1 MHz, R =4 C J 3GB - pf - 1.7 - pf 3BB - pf 3JB - pf 3KB 50 - pf 3MB - pf 3AB 3BB 3DB 3FB 3GB 3JB 3KB 3MB I F =0.5A, I R =1.0A I RR =0.25A t rr - 50-75 2 ersion:k1701

4 3AB - 3MB ORDERING INFORMATION PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX(*) PACKAGE PACKING 3xB (Note 1) H Note: 1. "x" defines voltage from 50 (3AB) to 0 (3MB) *: Optional available R5 SMB 850 / 7" Plastic reel R4 G SMB 3,000 / 13" Paper reel M4 SMB 3,000 / 13" Plastic reel EXAMPLE P/N PART NO. PACKING PACKING CODE EXAMPLE P/N PART NO. SUFFIX CODE SUFFIX 3ABHR5G 3AB H R5 G DESCRIPTION AEC-Q101 qualified Green compound 3 ersion:k1701

INSTANTANEOUS REERSE CURRENT (μa) INSTANTANEOUS FORWARD CURRENT (A) AERAGE FORWARD CURRENT (A) CAPACITANCE (pf) 4 3AB - 3MB CHARACTERISTICS CURES (T A = 25 C unless otherwise noted) Fig1. Forward Current Derating Curve Fig2. Typical Junction Capacitance 3.5 3 175 150 2.5 125 2 1.5 1 75 50 3AB-3GB 0.5 0 RESISTIE OR INDUCTIE LOAD 0 25 50 75 125 150 175 LEAD TEMPERATURE ( C) 3JB-3MB 25 0 0.1 1 10 0 REERSE OLTAGE () Fig3. Typical Reverse Characteristics Fig4. Typical Forward Characteristics 0 T J =125 10 3AB-3DB 10 T J =25 C 1 3GB 1 3JB-3MB 0.1 0 20 40 60 80 120 140 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 PERCENT OF RATED PEAK REERSE OLTAGE (%) FORWARD OLTAGE () 4 ersion:k1701

PEAK FORWARD SURGE URRENT(A) 4 3AB - 3MB Fig5. Maximum Non-repetitive Forward Surge Current 150 8.3ms Single Half Sine Wave 50 0 1 10 0 NUMBER OF CYCLES AT 60 Hz Fig6. Reverse Recovery Time Characteristic And Test Circuit Diagram 5 ersion:k1701

4 3AB - 3MB PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.95 2.20 0.077 0.087 B 4.05 4.60 0.159 0.181 C 3.30 3.95 0.130 0.156 D 1.95 2.65 0.077 0.104 E 0.75 1.60 0.030 0.063 F 5.10 5.60 0.201 0.220 G 0.05 0.20 0.002 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 B 2.5 0.098 C 4.3 0.169 D 1.8 0.071 E 6.8 0.268 MARKING DIAGRAM P/N G YW F = Marking Code = Green Compound = Date Code = Factory Code 6 ersion:k1701

4 3AB - 3MB Notice Specificatio of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no respoibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No licee, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditio of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applicatio. Customers using or selling these products for use in such applicatio do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 ersion:k1701