NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to ma DC and can deliver current up to A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features.A, 6V. R DS(ON) = Ω @ V GS = V R DS(ON) = Ω @ V GS =.5 V Voltage controlled p-channel small signal switch High density cell design for low R DS(ON) High saturation current D D S SOT- G G S Absolute Maximum Ratings TA=5 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 6 V V GSS Gate-Source Voltage ± V I D Drain Current Continuous (Note ). A P D Pulsed Maximum Power Dissipation (Note ).6 W Derate Above 5 C.9 mw/ C T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C T L Maximum Lead Temperature for Soldering Purposes, /6 from Case for Seconds C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note ) 5 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6 NDS6 7 8mm units Semiconductor Components Industries, LLC. September-7, Rev. Publication Order Number: NDS6/D
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = µa 6 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = µa,referenced to 5 C I DSS Zero Gate Voltage Drain Current V DS = 8 V, V GS = V µa V DS = 8 V,V GS = V T J = 5 C µa I GSS Gate Body Leakage. V GS = ± V, V DS = V ± na 5 mv/ C NDS6 On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = ma.7.5 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = ma,referenced to 5 C mv/ C R DS(on) Static Drain Source V GS = V, I D =.5 A. Ω On Resistance V GS =.5 V, I D =.5 A V GS = V,I D =.5 A,T J=5 C..7 6 I D(on) On State Drain Current V GS = V, V DS = V.6 A g FS Forward Transconductance V DS = V, I D =. A 7 ms Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, 79 pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance pf R G Gate Resistance V GS = 5 mv, f =. MHz Ω Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = 5 V, I D =. A,.5 5 ns t r Turn On Rise Time V GS = V, R GEN = 6 Ω 6..6 ns t d(off) Turn Off Delay Time 5 ns t f Turn Off Fall Time 7.5 5 ns Q g Total Gate Charge V DS = 8 V, I D =.5 A,.8.5 nc Q gs Gate Source Charge V GS = V. nc Gate Drain Charge. nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current. A V SD Drain Source Diode Forward V GS = V, I S =. A(Note ).8.5 V Voltage t rr Diode Reverse Recovery Time I F =.5A 7 ns Diode Reverse Recovery Charge d if/d t = A/µs (Note ) 5 nc Q rr Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a minimum pad.. Scale : on letter size paper. Pulse Test: Pulse Width µs, Duty Cycle.%
Typical Characteristics NDS6...8.6.. V GS =-V -6.V -.5V -.V -.5V -.V -.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE..8.6.. V GS =-.V -.5V -.V -.5V -6.V -V 5 6 -V DS, DRAIN TO SOURCE VOLTAGE (V).8...6.8.. Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.8.6...8.6 I D = -.5A V GS = -V. -5-5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) R DS(ON), ON-RESISTANCE (OHM) 5 I D = -.5A T A = 5 o C T A = 5 o C 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. -I D, DRAIN CURRENT (A)..8.6.. V DS = -V T A = -55 o C 5 o C 5 o C -I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 5 o C 5 o C -55 o C.5.5.5.5 -V GS, GATE TO SOURCE VOLTAGE (V)....6.8. -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Typical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) I D = -.5A V DS = -V -V 8-8V 6..8..6 Q g, GATE CHARGE (nc) CAPACITANCE (pf) 8 6 C RSS C OSS C ISS 5 6 -V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V NDS6 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics... R DS(ON) LIMIT V GS = -V R θja = 5 o C/W T A = 5 o C us ms ms s ms s DC. -V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) 5.. t, TIME (sec) R θja = 5 C/W T A = 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5...5....... t, TIME (sec) R θja (t) = r(t) * R θja R θja = 5 o C/W P(pk) t t T J - T A = P * R θja (t) Duty Cycle, D = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note a. Transient thermal response will change depending on the circuit board design.
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