FDD86 N-Channel PowerTrench MOSFET V, 7 A, m Features Max r DS(on) = m at V GS = V, I D = A Max r DS(on) = 7 m at V GS = 6 V, I D = 4 A % UIL tested RoHS Compliant General Description September This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC - DC Conversion D G D S D-PAK TO- (TO-) G S MOSFET Maximum Ratings T C = C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ± V Thermal Characteristics Drain Current -Continuous (Package limited) T C = C 4 I D -Continuous (Silicon limited) T C = C 7 -Continuous T A = C (Note a) A -Pulsed E AS Single Pulse Avalanche Energy (Note 3) 7 mj Power Dissipation T P C = C 89 D Power Dissipation T A = C (Note a) 3. W T J, T STG Operating and Storage Junction Temperature Range - to + C R JC Thermal Resistance, Junction to Case.4 R JA Thermal Resistance, Junction to Ambient (Note a) 4 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDD86 FDD86 D-PAK(TO-) 3 mm units Fairchild Semiconductor Corporation
Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = A, V GS = V V BV DSS Breakdown Voltage Temperature T J Coefficient I D = A, referenced to C 4 mv/ C I DSS Zero Gate Voltage Drain Current V DS = V, V GS = V A I GSS Gate to Source Leakage Current V GS = ± V, V DS = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = A. 3. 4. V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient Dynamic Characteristics I D = A, referenced to C - mv/ C V GS = V, I D = A 4 r DS(on) Static Drain to Source On Resistance V GS = 6 V, I D = 4 A 49 7 m V GS = V, I D = A,T J = C 8 3 g FS Forward Transconductance V DS = V, I D = A S C iss Input Capacitance 74 98 pf V DS = 7 V, V GS = V, C oss Output Capacitance 78 3 pf f = MHz C rss Reverse Transfer Capacitance 4. pf R g Gate Resistance.4 Switching Characteristics t d(on) Turn-On Delay Time 8.3 7 ns t r Rise Time V DD = 7 V, I D = A,.8 ns t d(off) Turn-Off Delay Time V GS = V, R GEN = 6 4 ns t f Fall Time 3 ns Q g Total Gate Charge V GS = V to V.3 6 nc Q g Total Gate Charge V GS = V to V V DD = 7 V, 6.3 9 nc Q gs Gate to Source Charge I D = A 3.4 nc Q gd Gate to Drain Miller Charge.6 nc Drain-Source Diode Characteristics V GS = V, I S = A (Note ).8.3 V V SD Source-Drain Diode Forward Voltage V GS = V, I S =.6 A (Note ).77. t rr Reverse Recovery Time 6 97 ns I F = A, di/dt = A/ s Q rr Reverse Recovery Charge 7 nc Notes: : R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R JA is determined by the user s board design. a) 4 C/W when mounted on a b) 96 C/W when mounted on in pad of oz copper a minimum pad : Pulse Test: Pulse Width < 3 s, Duty cycle <.%. 3: Starting T J = C, L = mh, I AS = A, V DD = 3 V, V GS = V. Fairchild Semiconductor Corporation
Typical Characteristics T J = C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = 4. V 3 4.4...8.6.4...8.6 Figure. I D = A V GS = V V GS = V V GS = 6 V PULSE DURATION = 8 s DUTY CYCLE =.% MAX V DS, DRAIN TO SOURCE VOLTAGE (V) V GS =. V V GS = V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8 s V GS = V DUTY CYCLE =.% MAX I D, DRAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage.4-7 - - 7 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (m ) 4 3 V GS = 4. V I D = A V GS = V T J = o C V GS =. V V GS = 6 V PULSE DURATION = 8 s DUTY CYCLE =.% MAX T J = o C 4 6 7 8 9 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) PULSE DURATION = 8 s DUTY CYCLE =.% MAX V DS = V T J = o C T J = o C T J = - o C 3 4 6 7 V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A) 3.. V GS = V T J = o C T J = o C T J = - o C....4.6.8.. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Fairchild Semiconductor Corporation 3
Typical Characteristics T J = C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) 8 6 4 I D = A 3 6 9 Figure 7. V DD = 7 V V DD = V Q g, GATE CHARGE (nc) V DD = V f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = o C T J = o C T J = o C... t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I D, DRAIN CURRENT (A) 3 V GS = 6 V V GS = V C iss C oss C rss R JC =.4 o C/W 7 T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED ms R JC =.4 o C/W T ms C = o C DC. 4 V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward BiasSafe Operating Area s ), PEAK TRANSIENT POWER (W) P(PK SINGLE PULSE R JC =.4 o C/W T C = o C - -4-3 - - t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation Fairchild Semiconductor Corporation 4
Typical Characteristics T J = C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z JC. DUTY CYCLE-DESCENDING ORDER D =...... SINGLE PULSE R JC =.4 o C/W. - -4-3 - - t, RECTANGULAR PULSE DURATION (sec) Figure 3. Junction-to-Case Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z JC x R Jc + T C Fairchild Semiconductor Corporation
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