PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB IRF1312 D 2 Pak IRF1312S TO-262 IRF1312L Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 10V 95 I D @ T C = 100 C Continuous Drain Current, V GS @ 10V 67 A I DM Pulsed Drain Current 380 P D @T A = 25 C Power Dissipation ˆ 3.8 W P D @T C = 25 C Power Dissipation 210 Linear Derating Factor 1.4 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt ƒ 5.1 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.73 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient (PCB mount)ˆ 40 Notes through ˆ are on page 11 www.irf.com 1 7/01/02
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 80 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.078 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 6.6 10 mω V GS = 10V, I D = 57A V GS(th) Gate Threshold Voltage 3.5 5.5 V V DS = V GS, I D = 250µA 1.0 V µa DS = 76V, V GS = 0V I DSS Drain-to-Source Leakage Current 250 V DS = 64V, V GS = 0V, T J = 150 C Gate-to-Source Forward Leakage 100 V GS = 20V I GSS na Gate-to-Source Reverse Leakage -100 V GS = -20V Dynamic @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 92 S V DS = 25V, I D = 57A Q g Total Gate Charge 93 140 I D = 57A Q gs Gate-to-Source Charge 36 nc V DS = 40V Q gd Gate-to-Drain ("Miller") Charge 34 V GS = 10V, t d(on) Turn-On Delay Time 25 V DD = 40V t r Rise Time 130 ns I D = 57A t d(off) Turn-Off Delay Time 47 R G = 4.5Ω t f Fall Time 51 V GS = 10V C iss Input Capacitance 5450 V GS = 0V C oss Output Capacitance 550 V DS = 25V C rss Reverse Transfer Capacitance 340 pf ƒ = 1.0MHz C oss Output Capacitance 1910 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 380 V GS = 0V, V DS = 64V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 620 V GS = 0V, V DS = 0V to 64V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 250 mj I AR Avalanche Current 57 A E AR Repetitive Avalanche Energy 21 mj Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 95 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 380 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 57A, V GS = 0V t rr Reverse Recovery Time 64 96 ns T J = 25 C, I F = 57A Q rr Reverse RecoveryCharge 150 230 nc di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) 2 www.irf.com
I D, Drain-to-Source Current ( A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF1312/S/L 1000 100 10 VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 1000 100 VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 1 10 0.1 0.01 5.0V 20µs PULSE WIDTH Tj = 25 C 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 5.0V 20µs PULSE WIDTH Tj = 25 C 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 100.00 T J = 175 C 2.5 2.0 I D = 95A V GS = 10V 10.00 T J = 25 C 1.5 1.00 0.10 0.01 V DS = 25V 20µs PULSE WIDTH 5 6 7 8 9 10 V GS, Gate-to-Source Voltage (V) 1.0 0.5-60 -40-20 0 20 40 60 80 100 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
I D, Drain-to-Source Current (A) C, Capacitance (pf) I SD, Reverse Drain Current (A) V GS, Gate-to-Source Voltage (V) IRF1312/S/L 100000 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd 20 16 I D = 57A V DS = 64V VDS= 40V VDS= 16V 10000 C oss = C ds C gd Ciss 12 8 1000 Coss Crss 4 100 1 10 100 V DS, Drain-to-Source Voltage (V) 0 FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 200 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY R DS (on) 100.0 T J = 175 C 1000 100 10.0 T 1.0 J = 25 C V GS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V SD, Source-toDrain Voltage (V) 10 1 0.1 Tc = 25 C Tj = 175 C Single Pulse 100µsec 1msec 10msec 1 10 100 1000 V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) IRF1312/S/L 100 LIMITED BY PACKAGE V DS R D 80 R G V GS D.U.T. 60 V GS 40 Pulse Width 1 µs Duty Factor 0.1 % - V DD 20 0 25 50 75 100 125 150 175 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit V DS 90% 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thjc ) 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C 0.01 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
R G V DS 20V V GS tp Fig 12a. Unclamped Inductive Test Circuit tp L D.U.T IAS 0.01Ω 15V DRIVER V (BR)DSS - V DD A E AS, Single Pulse Avalanche Energy (mj) 500 400 300 200 100 TOP BOTTOM I D 23A 40A 57A 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF V GS Q GS Q GD D.U.T. V - DS V GS V G 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - V GS R G dv/dt controlled by R G I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive Period P.W. D = P.W. Period [ V GS =10V ] *** D.U.T. I SD Waveform Reverse Recovery Current Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Ripple 5% Forward Drop [ V DD ] [ ] I SD *** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET power MOSFETs www.irf.com 7
TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) - A - 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 4 6.47 (.255) 6.10 (.240) 1 2 3 1.15 (.045) MIN LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 2.92 (.115) 2.64 (.104) 0.55 (.022) 0.46 (.018) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 8 www.irf.com
D 2 Pak Package Outline D 2 Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com 9
TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 10 www.irf.com
D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) 10.90 (.429) 10.70 (.421) 11.60 (.457) 11.40 (.449) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting T J = 25 C, L = 0.15mH R G = 25Ω, I AS = 57A. (See Figure 12) ƒ I SD 57A, di/dt 410A/µs, V DD V (BR)DSS, T J 175 C Pulse width 400µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. This is only applied to TO-220AB package ˆ This is applied to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. TO-220AB package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.7/02 www.irf.com 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/