Ordering number : EN64B SA68N/SC6N Bipolar Transistor ( )V, ( )ma, Low VCE(sat) (PNP)NPN Single -WA http://onsemi.com Applicaitons Capable of being used in the low frequency to high frequency range Features Large current capacity and wide ASO Specifications ( ) : SA68N Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO (--)6 V Collector to Emitter Voltage VCEO (--) V Emitter to Base Voltage VEBO (--)6 V Collector Current IC (--) ma Collector Current (Pulse) ICP (--)4 ma Collector Dissipation PC mw Junction Temperature Tj C Storage Temperature Tstg -- to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 4-1 Ordering & Package Information Device Package Shipping memo SA68NF--AT SC-4A, TO-9, TO-6AA, SOT-4 1,..4 1. 4... 1.4max.6 4.max 4. SA68NF--AT SA68NG--AT SC6NF--AT SC6NG--AT SA68NG--AT SC6NF--AT SC6NG--AT Marking SC-4A, TO-9, TO-6AA, SOT-4 SC-4A, TO-9, TO-6AA, SOT-4 SC-4A, TO-9, TO-6AA, SOT-4 1, 1, 1, Pb-Free 1. 14. A68 R AN LOT No. K C6 R AN LOT No. K.4.44 1.. 1 : Emitter : Collector : Base -WA Semiconductor Components Industries, LLC, 1 July, 1 11 TKIM TC-1/O41 TKIM/4 TSIM TA-, 6/ No.64-1/6 TS (KOTO) TA-4
SA68N/SC6N Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)4V, IE=A (--).1 μa Emitter Cutoff Current IEBO VEB=(--)V, IC=A (--).1 μa DC Current Gain hfe1 VCE=(--)6V, IC=(--)1mA 16* 6* hfe VCE=(--)6V, IC=(--).1mA Gain-Bandwidth Product ft VCE=(--)6V, IC=(--)mA MHz Output Capacitance Cob VCB=(--)6V, f=1mhz (4.). pf Collector to Emitter Saturation Voltage VCE(sat) IC=(--)mA, IB=(--)mA (--). V Base to Emitter Saturation Voltage VBE(sat) IC=(--)mA, IB=(--)mA (--) V Collector to Base Breakdown Voltage V(BR)CBO IC=(--)μA, IE=A (--)6 V Collector to Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE= (--) V Emitter to Base Breakdown Voltage V(BR)EBO IE=(--)μA, IC=A (--)6 V * : The SA68N / SC6N are classified by 1mA hfe as follow : Rank F G hfe 16 to 8 to 6 --16 --1 --8 --4 --4 -- --16 -- IC -- VCE --μa --4μA --4μA --μa --μa --μa --μa --1μA --μa --μa SA68N I B =μa -- -- -- --4 -- Collector to Emitter Voltage, V CE -- V IT496 --8 --4 IC -- VBE Ta= C C -- C SA68N V CE = --6V 16 1 8 4 μa 4μA IC -- VCE 4μA μa μa μa μa 1μA μa μa SC6N I B =μa 4 Collector to Emitter Voltage, V CE -- V IT49 4 16 8 4 IC -- VBE Ta= C C -- C SC6N V CE =6V --. --.4 --.6 --.8 -- --1. Base to Emitter Voltage, V BE -- V IT498..4.6.8 1. Base to Emitter Voltage, V BE -- V IT499 No.64-/6
SA68N/SC6N hfe -- IC SA68N V CE = --6V hfe -- IC SC6N V CE =6V DC Current Gain, h FE Ta= C -- C C DC Current Gain, h FE Ta= C -- C C Gain-Bandwidth Product, f T -- MHz --.1 -- -- -- -- IT ft -- IC SA68N V CE = --6V Gain-Bandwidth Product, f T -- MHz.1 IT1 ft -- IC SC6N VCE=6V -- -- -- Cob -- VCB -- IT SA68N f=1mhz Cob -- VCB IT SC6N f=1mhz -- pf -- pf Output Capacitance, Cob Output Capacitance, Cob Collector to Emitter Saturation Voltage, V CE (sat) -- V.1 -- --.1 --.1 -- -- -- Collector to Base Voltage, V CB -- V IT4 VCE(sat) -- IC SA68N I C / I B = -- Collector to Emitter Saturation Voltage, V CE (sat) -- V.1.1.1 Collector to Base Voltage, V CB -- V IT VCE(sat) -- IC SC6N I C / I B = --.1 -- -- -- -- IT6.1 IT No.64-/6
SA68N/SC6N I CP =4mA I C =ma A S O SA68N / SC6N For PNP, minus sign is omitted. ms DC operation ms Collector to Emitter Voltage, V CE -- V IT11 Collector Dissipation, P C -- mw 6 4 PC -- Ta SA68N / SC6N 4 6 8 14 16 Ambient Temperature, Ta -- C IT No.64-4/6
SA68N/SC6N Outline Drawing SA68NF--AT, SA68NG--AT, SC6NF--AT, SC6NG--AT Mass (g) Unit.19 * For reference mm No.64-/6
SA68N/SC6N ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.64-6/6