DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 995 Apr 25 Philips Semiconductors
FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to GHz. APPLICATIONS HF and UHF applications with 2 supply voltage, such as television tuners and professional communications equipment. PINNING PIN SYMBOL DESCRIPTION s, b source 2 d drain 3 g 2 gate 2 4 g gate d 3 4 DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. Top view 2 MAM98 g 2 g s,b CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Marking code: MB. Fig. Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DS drain-source voltage 2 I D drain current 3 ma P tot total power dissipation 3 mw T j operating junction temperature 5 C y fs forward transfer admittance 24 ms C ig-s input capacitance at gate 2. pf C rs reverse transfer capacitance f = MHz 25 ff F noise figure f = 8 MHz db 995 Apr 25 2
LIMITING ALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT DS drain-source voltage 2 I D drain current 3 ma I G gate current ± ma I G2 gate 2 current ± ma P tot total power dissipation up to T amb = 45 C; see Fig.2; note 3 mw T stg storage temperature 65 +5 C T j operating junction temperature +5 C Note. Device mounted on a printed-circuit board. 4 handbook, halfpage P tot (mw) MLD54 3 2 5 5 2 T amb ( o C) Fig.2 Power derating curve. 995 Apr 25 3
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS ALUE UNIT R th j-a thermal resistance from junction to ambient note 35 K/W R th j-s thermal resistance from junction to soldering point note 2; T s = 9 C 2 K/W Notes. Device mounted on a printed-circuit board. 2. T s is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS T j = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT (BR)G-SS gate -source breakdown voltage G2-S = DS = ; I G-S = ma 6 2 (BR)G2-SS gate 2-source breakdown voltage G-S = DS = ; I G2-S = ma 6 2 (P)G-S gate -source cut-off voltage G2-S = 4 ; DS = 8 ; I D = 2 µa 2.5 (P)G2-S gate 2-source cut-off voltage G-S = ; DS = 8 ; I D = 2 µa 2 I DSS drain-source current G2-S = 4 ; DS = 8 ; G-S = 2 8 ma I G-SS gate cut-off current G2-S = DS = ; G-S = 5 5 na I G2-SS gate 2 cut-off current G-S = DS = ; G2-S = 5 5 na DYNAMIC CHARACTERISTICS Common source; T amb = 25 C; G2-S = 4 ; I D = ma; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance pulsed; T j = 25 C 22 25 ms C ig-s input capacitance at gate f = MHz 2. 2.5 pf C ig2-s input capacitance at gate 2 f = MHz.2 pf C os drain-source capacitance f = MHz.5 pf C rs reverse transfer capacitance f = MHz 25 ff F noise figure f = 2 MHz; G S = 2 ms; B S = B Sopt.6 db f = 8 MHz; G S = 3.3 ms; B S = B Sopt db 995 Apr 25 4
24 I D (ma) G2 S = 4 3 2 MGC47 24 I D (ma) MGC47 = G S.4.3 6 6.2. 8 8..2 G S () 2 4 6 8 DS ().3.4.5 DS = 8. T amb = 25 C. G2-S = 4. T amb = 25 C. Fig.3 Transfer characteristics; typical values. Fig.4 Output characteristics; typical values. 24 I D (ms) 6 max MGC472 typ y fs (ms) 3 24 8 4 3 2 MGC473 8 min 2 6 2 8 4 4 G (m) 6.5 G2 S = 4 8 2 6 2 I D (ma) DS = 8 ; G2 = 4 ; T amb = 25 C. DS = 8 ; T amb = 25 C. Fig.5 Drain current as a function of gate voltage; typical values. Fig.6 Forward transfer admittance as a function of drain current; typical values. 995 Apr 25 5
3 y fs (ms) 24 MGC474 G2 S = 4.5 C os (pf).4 MGC475 3 8.3 2 2 6 G-S ().2 I D = 2 ma. ma 8 ma. 4 6 8 2 4 DS () DS = 8 ; T amb = 25 C. G2-S = 4 ; f = MHz; T amb = 25 C. Fig.7 Forward transfer admittance as a function of gate voltage; typical values. Fig.8 Output capacitance as a function of drain-source voltage; typical values. 2.4 MGC476 2.4 MGC477 C is (pf) 2.2 C is (pf) 2.3 2. 2.2.8.6 2..4 2.4.6.8.8 G-S (m) 2. 6 4 2 2 G2-S () DS = 8 ; G2-S = 4 ; f = MHz; T amb = 25 C. DS = 8 ; G-S = ; f = MHz; T amb = 25 C. Fig.9 Gate input capacitance as a function of gate -source voltage; typical values. Fig. Gate input capacitance as a function of gate 2-source voltage; typical values. 995 Apr 25 6
MGC466 3 MGC467 3 y is (ms) y rs (µs) ϕ rs (deg) b is 2 ϕ rs 2 y rs g is 2 2 f (MHz) 3 2 f (MHz) 3 DS = 8 ; G2-S = 4. I D = ma; T amb = 25 C. DS = 8 ; G2-S = 4. I D = ma; T amb = 25 C. Fig. Input admittance as a function of the frequency; typical values. Fig.2 Reverse transfer admittance and phase as a function of frequency; typical values. 2 MGC468 2 MGC469 y fs (ms) y fs ϕ fs (deg) y os (ms) b os ϕ fs g os 2 f (MHz) 3 2 2 f (MHz) 3 DS = 8 ; G2-S = 4. I D = ma; T amb = 25 C. DS = 8 ; G2-S = 4. I D = ma; T amb = 25 C. Fig.3 Forward transfer admittance and phase as a function of frequency; typical values. Fig.4 Output admittance as a function of the frequency; typical values. 995 Apr 25 7
DD 47 µf AGC 2 µh 47.8 L2 5 Ω input 5 Ω input C 5.5 pf L 36 5 pf Ω pf DD 4 D BB45 33 D2 BB45 33 tun input tun output MGC48 DD = 2 ; G S = 2 ms; G L =.5 ms. L = 45 nh; 4 turns.8 mm copper wire, internal diameter 4 mm. L2 = 6 nh; 3 turns.8 mm copper wire, internal diameter 8 mm. Tapped at approximately half a turn from the cold side, to adjust G L =.5 ms. C adjusted for G S = 2 ms. Fig.5 Gain control testcircuit at f = 2 MHz. 995 Apr 25 8
DD AGC DD 4 5 Ω input L L2 27 L3 C3.5-3.5 pf L4 C4 4-4 pf 5 Ω input MGC48 C 2-8 pf C2.5-3.5 pf.8 36 Ω DD DD = 2 ; G S = 3.3 ms; G L = ms. L = L4 = 2 nh; turns.5 mm copper wire, without spacing, internal diameter 3 mm. L2 = 2 cm, silvered.8 mm copper wire, 4 mm above ground plane. L3 = 2 cm, silvered.5 mm copper wire, 4 mm above ground plane. Fig.6 Gain control test circuit at f = 8 MHz. G tr (db) MGC479 G tr (db) MGC478 2 3 2 3 I DSS = max typ min 4 I DSS = max typ min 5 2 4 6 8 AGC () 4 5 2 4 6 8 AGC () DD = 2 ; f = 2 MHz; T amb = 25 C. Fig.7 Automatic gain control characteristics measured in circuit of Fig.5. DD = 2 ; f = 8 MHz; T amb = 25 C. Fig.8 Automatic gain control characteristics measured in circuit of Fig.6. 995 Apr 25 9
PACKAGE OUTLINE. max.2 M A.2 M B 3 4.4.2 A. max.2 2.2 2..35.5 2.3..7.5.25..4.2 2.2.8 B MSB367 Dimensions in mm. Fig.9 SOT343R. 995 Apr 25
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Limiting values This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 995 Apr 25
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