hyristor Module = 2x6 M = 25 A A =.8 Phase leg Part number MCC255-6io Backside: isolated 3 2 6 7 5 4 Features / Advantages: Applications: Package: Y nternational standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chip solation voltage 36 ~ Keyed gate/cathode twin pins Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches solation oltage: 36 ~ ndustry standard outline ohs compliant Soldering pins for PCB mounting Base plate: Copper internally B isolated Advanced power cycling erms Conditions of usage: he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
hyristor Symbol Definition Conditions = 6 = 6 = 25 C J = 4 C atings typ. max. 7 forward voltage drop = 3 A = 25 C.4 SM/DSM M/DM /D A (MS) = = = 6 A 3 A 6 A C= 85 C = 25 C J = 25 C J threshold voltage J = 4 C.8 for power loss calculation only r slope resistance.68 mω thermal resistance junction to case.4 K/W thjc P tot total power dissipation = 25 C 82 W P GM P GA J J = 25 C SM max. forward surge current t = ms; (5 Hz), sine J = 45 C t = 8,3 ms; (6 Hz), sine = C J junction capacitance = 4 f = MHz = 25 C 438 max. gate power dissipation t P= 3 µs C = 4 C 2 average gate power dissipation t = ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine J C min. 6 4.36.8.33 25 45 t = 5 µs 6 P J = 4 C ²t value for fusing t = ms; (5 Hz), sine = 45 C (di/dt) cr average forward current MS forward current critical rate of rise of current 8 sine t = 8,3 ms; (6 Hz), sine t = ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine J = 4 C = = = 4 C J J = 9.2 9.94 7.82 8.45 423.2 4.6 35.8 296.7 2 Unit ma ma A A ²s ²s ²s ²s J pf J = 4 C; f = 5 Hz t P= 2 µs; di G /dt = A/µs; repetitive, = 86 A G = A; = ⅔ DM non-repet., = 25 A (dv/dt) critical rate of rise of voltage = ⅔ DM J = 4 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current /D /D thch thermal resistance case to heatsink.4 GK = ; method (linear voltage rise) G gate trigger voltage = 6 = 25 C D J J = -4 C 5 W W W A/µs A/µs /µs 2 G gate trigger current D = 6 J = 25 C 5 ma J = -4 C 3 22 ma GD gate non-trigger voltage = ⅔ J = C.25 D DM 4 GD gate non-trigger current ma L latching current t p = 3 µs J = 25 C 2 ma G =.45A; di G /dt =.45 A/µs H holding current D = 6 GK = J = 25 C 5 ma t gd gate controlled delay time = ½ J = 25 C 2 µs D DM G = A; di G /dt = A/µs t q turn-off time = ; = 3 A; = ⅔ DM J = 25 C 2 µs di/dt = A/µs dv/dt = 5 /µs t p = 2 µs K/W
Package atings Symbol Definition Conditions min. typ. max. Unit MS MS current per terminal 6 A J virtual junction temperature -4 4 C op operation temperature -4 25 C Weight M D M dspp/app dspb/apb Y stg storage temperature -4 25 C SOL mounting torque 4.5 terminal torque creepage distance on surface striking distance through air isolation voltage t = second t = minute terminal to terminal terminal to backside 5/6 Hz, MS; SOL ma 6. 6. 36 3 68 7 3 g Nm Nm mm mm Production ndex (P) Date Code () yywwaa Part Number Lot.No: xxxxxx Circuit Data Matrix: part no. (-9), + P (2-25), lot.no.# (26-3), blank (32), serial no.# (33-36) Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MCC255-6io MCC255-6io Box 3 4652 Equivalent Circuits for Simulation * on die level = 4 C hyristor J max threshold voltage.8 max slope resistance *.5 mω
Outlines Y 3x M8 2.8 x.8 49 43 45 2 2 22.5 35 28.5 8 6 7 32 + -,9 52 + -,4 5 ± 4 5 5 38 5 2 3 6.2 8 92 5 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 35 mm, gate = white, cathode = red ype ZY 8L (L = Left for pin pair 4/5) UL 758, style 375 ype ZY 8 ( = ight for pin pair 6/7) 3 2 6 7 5 4
hyristor 6 4 8 5 Hz 8 % M J = 45 C J = 4 C J = 45 C 3 8 sin 2 6 SM 2 dt 5 J = 4 C AM 2 4 [A] 2 [A 2 s] [A]... t [s] 4 t [ms] 25 5 75 25 5 C [ C] Fig. Surge overload current (F)SM : Crest value, t: duration Fig. 2 2 dt versus time Fig. 3 Max. forward current at case temperature P tot [W] 5 4 3 2 8 sin 2 2 3 AM [A] 25 5 75 25 5 A [ C] Fig. 4 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) thka K/W..2.3.4.6.8. G [] : G, J = 4 C 2: G, J = 25 C 3: G, J = -4 C GD, J = 4 C 2 3 4 6 5. -3-2 - 2 G [A] 4: P GM = 2 W 5: P GM = 6 W 6: P GM = 2 W Fig. 5 Surge overload current (F)SM : Crest value, t: duration 2 thka K/W 5 P tot [W] 5 Circuit B6 3xMCC255 or 3xMCD255.3.6..5.2.3.4 t gd [µs] typ. limit J = 25 C 2 4 6 DAM 25 5 75 25 5 [ A] A [ C] Fig. 6 hree phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature.. G [A] Fig. 7 Gate trigger delay time
hyristor 2 5 P tot [W] 5 Circuit W3 3xMCC255 or 3xMCD255 thka K/W.3.6..5.2.3.4 2 3 4 5 25 5 75 25 5 MS [A] A [ C] Fig. 8 hree phase AC-controller: Power dissipation versus MS output current and ambient temperature Z thjc [K/W].25.2.5..5 2 8. -3-2 - 2 t [s] Fig. 9 ransient thermal impedance junction to case (per thyristor/diode) thjc for various conduct. angles d: d 8 2 thjc [K/W].39.48.56.76.24 Constants for Z thjc calculation: i thi [K/W] t i [s].66.54 2.358.98 3.83.54 4.29 2 Z thjk.3.25.2.5 [K/W]..5 2 8. -3-2 - 2 t [s] Fig. ransient thermal impedance junction to heatsink (per thyristor/diode) thjk for various conduct. angles d: d 8 2 Constants for Z thjk calculation: i thi [K/W].66 2.358 3.83 4.29 5.4 thjk [K/W].79.88.96.26.254 t i [s].54.98.54 2 2