IrDA Infrared Communication Module

Similar documents
IrDA Infrared Communication Module

IrDA Infrared Communication Module

IrDA Infrared Communication Module

IrDA Infrared communication Module

IrDA Infrared Communication Module

IrDA Infrared Communication Module

IrDA Infrared Communication Module

IrDA Infrared Communication Module

Switching (60V, 300mA)

4V Drive Nch MOS FET RHU002N06 RHU002N06. Transistors. Rev.B 1/4. External dimensions (Unit : mm) Structure Silicon N-channel MOS FET transistor

Infrared light emitting diode, top view type

Infrared light emitting diode, top view type

Quad 2-input AND gate

Video signal switcher

Dual comparators BA10393 / BA10393F / BA10393N. Standard ICs

Quad 2-input NAND Schmitt trigger

Hex Schmitt trigger BU4584B / BU4584BF / BU4584BFV. Standard ICs

Video signal switcher

Quad 2-channel analog multiplexer / demultiplexer

Dual high slew rate operational amplifier

Quad operational amplifier

16-bit stereo D / A converter for audio applications

BA6840BFS / BA6840BFP-Y / BA6840BFP / BA6842BFS

New Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4

FM / TV front end BA4424N. Audio ICs

DC-DC Converter ( 20V, 4.0A)

General purpose(dual transistors)

DC-DC Converter ( 20V, 1.0A)

Reversible motor driver

Switching ( 30V, 4.5A)

High voltage, high current Darlington transistor array

General purpose transistor (dual transistors)

4V Drive Nch+SBD MOSFET

DatasheetArchive.com. Request For Quotation

Switching ( 30V, 5.0A)

2.5V Drive Pch+Pch MOSFET

2.5V Drive Nch+SBD MOSFET

4V Drive Nch MOS FET RSS085N05 RSS085N05. Transistor 1/4. Structure Silicon N-channel MOS FET. External dimensions (Unit : mm)

BP5232A25/BP5232A33/BP5233A33/BP5234A33 Power Module BP5232A25 / BP5232A33 / BP5233A33 / BP5234A33

2.5V Drive Pch MOS FET

2.5V Drive Pch MOS FET

2.5V Drive Pch MOS FET

4V+2.5V Drive Nch+Pch MOSFET

Switching SP8M3 SP8M3. Transistors. External dimensions (Unit : mm)

NPN General Purpose Transistor

Power Transistor (80V, 1A)

4bit LVDS Receiver BU90LV048. LVDS Interface ICs

NPN General Purpose Transistor

2.5V Drive Nch+Pch MOSFET

SERIES CATALOG. Photo Link Modules. Remote Control Receiver Module. IrDA Infrared Communication Module

Circuit protection elements

Power management (dual transistors)

2.5V Drive Nch+Pch MOSFET

Applications Suitable for use where low power consumption and a high degree of noise tolerance are required. BU4S01G2 BU4S11G2 BU4SU69G2 BU4S71G2

US6U37 Structure Dimensions TUMT6 for Features Applications Inner circuit Package specifications Designs Absolute maximum ratings Recommended New

ZHX1010. SIR Transceiver. Product Specification PS

NPN Medium Power Transistor (Switching)

Power management (dual transistors)

1.8V Drive Nch+Nch MOSFET

GP1FA550RZ. Amp. Amp.

GP1F31T/R, GP1F32T/R, GP1F33TT/RR/RT, GP1C331/331A/332/333/334/335

TC74HC423AP,TC74HC423AF

1.5V Drive Nch MOSFET

TC74HC123AP,TC74HC123AF,TC74HC123AFN

2.5V Drive Nch+Pch MOSFET

TC74HC07AP, TC74HC07AF

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74HC153AP, TC74HC153AF TC74HC253AP, TC74HC253AF

74HC259D 74HC259D. 1. Functional Description. 2. General. 3. Features. 4. Packaging Rev Toshiba Corporation

Band-pass filter for spectrum analyzer for car audio systems BA3834F

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S66F, TC7S66FU

TC74HC4538AP, TC74HC4538AF, TC74HC4538AFT

This product complies with the RoHS Directive (EU 2002/95/EC).

2.54 Lead base GP1FA501RZ. Amp. Amp.

TC7WZ74FU, TC7WZ74FK

TC74AC390P, TC74AC390F

TC74HC4094AP, TC74HC4094AF

TC7W74FU, TC7W74FK TC7W74FU/FK. D-Type Flip Flop with Preset and Clear. Features. Marking

74HC138D 74HC138D. 1. Functional Description. 2. General. 3. Features. 4. Packaging Rev Toshiba Corporation

Slim Series SIR Transceiver

NPN General Purpose Transistor

mw Peak emission wavelength λ p IF = 100mA nm Half intensity wavelength λ IF= 100mA nm

TC74HC4020AP, TC74HC4020AF TC74HC4040AP, TC74HC4040AF

TC74HC374AP,TC74HC374AF,TC74HC374AFW

74HC153D 74HC153D. 1. Functional Description. 2. General. 3. Features. 4. Packaging Rev Toshiba Corporation

Sulfur Tolerant Chip Resistors

TC74HC139AP, TC74HC139AF

SIDE VIEW IRMS Mb/s Infrared Data Transceiver

2- φ2.0 ± MIN. (7.25) (1.27) (2.54) *2 For 5 seconds. ( Unless otherwise specified, Ta = 0 to + 70 C) *3*4IF= 30mA, V CC= 5V

TC74HC595AP, TC74HC595AF

TC7WPB8306L8X,TC7WPB8307L8X

TC4538BP,TC4538BF TC4538BP/BF. TC4538BP/TC4538BF Dual Precision Retriggerable/Resettable Monostable Multivibrator. Features.

TC74HC175AP,TC74HC175AF,TC74HC175AFN

Single Digit LED Numeric Display

OLI580: Opto-Isolated High-Speed Power MOSFET Driver for Hybrid Assembly

TC74HC273AP,TC74HC273AF,TC74HC273AFW

Audio Accessory IC Series Ground Isolation Amplifier BA3121F, BA3123F Rev.A 1/8

Integrated Low Profile Transceiver Module for Telecom Applications IrDA Standard

SN54AHC123A, SN74AHC123A DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORS

TFDU4100/TFDS4500/TFDT4500

Transcription:

IrDA Infrared Communication Module is an infrared communication module for IrDA er. 1.3 (Low Power). The infrared LED, PIN photo diode, and waveform shaping LSI are all integrated into one single package. This module is designed for low power coumption. The very small package makes it a perfect fit for mobile devices. Features 1) Infrared LED, PIN photo diode, LED driver & Receiver frequency formation circuit built in. Improvement of EMI noise protection because of Shield Case. 2) Applied to SIR (2.4 k to 115.2 kbps) and MIR (0.576,1.152 Mbps) 3) Surface mount type. 4) Power down function built in. 5) Adjustable communication distance by LED load resistance value. Applicatio Cellular Phone, PDA, DC, Digital Still Camera, Printer, Handy Terminal, etc Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Supply oltage Input oltage cc/ledcc/ in(3,4,5pin) 6.5 1 0.3 +0.3 Operation Temperature Storage Temperature Topr Tstg 25 85 30 100 C C LED Peak Current Ifp 400 2 ma Power Dissipation Pd 300 3 mw 1) This applies to all pi basis ground pin (8pin). 2) LED Peak Current : <90 µs, On duty <25% 3) When glass-epoxy board (70x70x1.6mm) mounted. In case of operating environment is over 25 C, 4mW would be reduced per each 1 C stepping up. Recommended operating conditio (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Supply voltage CC 2.4 3.0 3.6 LEDCC 2.7 3.0 5.5 1.8 3.0 CC 1/5

AMP Photo Link Module Block diagram and application circuit 1 LEDA R1 LEDCC LEDC AMP AMP POWER DOWN 8 7 6 5 4 3 2 TXD RXD CC GND C1 TXD RXD CC GND CC(6pin) and LEDCC(1pin) can be used on either common power source or different one Recommended values Part symbol C1 R1 Recommended value Notice 6.8µF, Ceramic or tantalum Ex.) TCFGA1A685M8R (ROHM) Bigger capacitance is recommended with much noise from power supply 5.6Ω + 5%,1/4 W More than 50cm distance, more than 10µW/cm 2 at detecting (LEDCC=3.0) side.(vs ver1.1) In case of using R1 with different condition from the above, formula is as follows : LED resistance value : R1{Ω}, LED average coumption current : ILED{mA}, Supply voltage : LEDCC{} necessary d{cm} (Including LED's distribution within + 15 deg) R1=T (LEDCC1.45) / d 2 5{Ω} ILED=Duty (LEDCC1.36) / (R1+4) {A} Duty : LED duty at emitting, T=17000 at ILED / Duty <180 ma 2/5

Terminal description Pin No Terminal Circuit Function 1 LEDA LED Anode Terminal 1 Other power source can be used difference between LED LEDCC and CC. 2 LED current depends on LED load resistance value. Include internal current limiter (max.400ma). 2 LEDC LED Cathode Terminal This terminal must be left open. 3 TXD 600k Tramitting Data Input Terminal H:LED radiant (='L') CMOSLogic Level Input. Holding TXD="H"status,LED will be turn off approximately 48 µs. 4 RXD 300k Receiving Data Output Terminal When (5pin)='H', the RXD output will be pulled up tp at approximately 300 kω. 5 Power-down Control Terminal H: POWERDOWN L: OPERATION CMOS Logic Level Input. When input is "H", it will stop the receiving circuit, PinPD current and tramitting LED operation. 6 CC CC Supply voltage for Traceiver circuits. For preventing from infection, connect a capacitor between GND(8pin). 7 Supply voltage for I / 0 pi (,RXD,TXD). 8 GND GROUND Shield Case Connect to Ground. 3/5

Electrical characteristics (Unless otherwise noted, CC=3, LEDCC=3, =3, Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditio Coumption Current 1 Coumption Current 2 Tramission Rate Input High oltage Input Low oltage Input High Current Input Low Current ICC1 ICC2 PDH PDL IPDH IPDL 270 2.4 440 0.01 610 0.2 1152 kbps = O At no input light = At no input light 2/3 = 1.8 3.6 0 1/3 ( < = CC) 1.0 0 1.0 = 1.0 0 1.0 = 0 < Tramitter > TXD Input Higholtage TXD Input Low oltage TXD Input HighCurrent TXD Input Low Current LED Anode Current 1 TXH TXL ITXH ITXL ILED1 2/3 0 2.5 1.0 5 0 170 1/3 10 1.0 ma = 1.8 3.6 ( < = CC) TXD = TXD = 0 LED Anode Current 2 ILED2 180 260 400 ma LEDCC=5.5 < Receiver > RXD Output High oltage RXH 0.4 IRXH = 200 RXD Output Low oltage RXL 0 0.4 IRXL = 200 RXD Output Rise Time trr 20 CL = 15pF RXD Output Fall Time tfr 20 CL = 15pF RXD Output Pulse Width twrxd 228 380 532 CL = 15pF, 2.4k 1.152 Mbps RXD Output Pulse Edje Jitter Tjrxd 160 1.152 Mbps Receiver Latency Time trt 100 200 µs Optical characteristics (Unless otherwise noted, CC=3, LEDA=3, =3, Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditio Peak Wave Length λp 850 870 900 nm Inteity1 IE1 25 63 200 mw / Sr 15 deg = < θ L = < 15 deg Inteity2 IE2 24 mw / Sr θ L < = 30 deg,30 deg = < θ L HalfAngle θl / 2 ±18 deg Rise Time / Fall Time Tr / Tf 40 10% 90% Optical Over Shoot 25 % Edge Jitter Tj 25 25 Optical Pulse Width Twe 172 217 256 ttxd=217 Minimum Irradiance in Angular Eemin 9 14 µw / cm 2 15 deg = < = < θ L 15 deg Maximum Irradiance in Augular Eemax 500 mw / cm 2 15 deg = < θ L < = 15 deg Input HalfAngular θd / 2 ±15 deg Maximum Emitting Time TLEDmax 16 48 120 µs TXD= 1. This product is not designed for protection agait radioactive rays. 2. This product dose not include laser tramitter. 3. This product includes one PIN photo diode. 4. This product dose not include optical load. 4/5

Notes 1) LEDCC (1pin), CC (6pin) and (7pin) Other power source can be used difference between LEDCC and CC and. ( < CC +0.3) 2) Caution in designing board lay-out To get maximum potential from, please keep in mind following itruction. The line of RXD (4pin) should be connected at backside via through hole close to pin lead. Better not to be close to photo diode side (8pin side). This is to minimize feedback supplied to photo diode from RXD. As for C1 between 6-8 pin should be placed close to. Better to be placed more than 1.0cm in radius from photo diode (8pin side) and also away from the parts which generates noise, such as DC / DC converter. 3) Notes Please be sure to set up the TXD (3pin) input to be L (under 0.6) except tramitting data (for < 90µsec. On Duty < 25%). Powerdown current might increase if exposed by strong light (ex. direct sunlight) at powerdown mode. Please use by the signal format which is specified by IrDA er1.3 (Low Power) except 4 Mbps. There might be on error if used by different signal format. Dust or dirt on le portion may affect the characteristics, so pay suffye Safe IEC825-1 (EN60825-1) Class 1 Eye Safe. External dimeio (Units : mm) 960 Lot No. R1.0 8.0 R1.1 2.2 1 2.2 LED 1.1 Pin PD 0.15 0.8 2.8 4.0 2.55 2.7 2.9 1 0.35 8 P0.95 7 = 6.65 0.6 0.475 0.6 0.675 5/5

Appendix Notes No technical content pages of this document may be reproduced in any form or tramitted by any mea without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specificatio for the product described in this document are for reference only. Upon actual use, therefore, please request that specificatio to be separately delivered. Application circuit diagrams and circuit cotants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditio when designing circuits and deciding upon circuit cotants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustratio of such devices and not as the specificatio for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or licee to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communicatio devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical itruments, traportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to coult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapo of Mass Destruction. Appendix1-Rev1.0