2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC- DC converters and H-bridge PWM motor drivers. FEATURES 2A,600V,R DS(on)(typ.) =3.7Ω@V GS =10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. Package Type Marking Material Packing SVF2N60M TO-251D-3L SVF2N60M Pb free Tube SVF2N60MG TO-251D-3L SVF2N60MG Halogen free Tube SVF2N60MJ TO-251J-3L SVF2N60MJ Pb free Tube SVF2N60N TO-126-3L SVF2N60N Pb free Bulk SVF2N60NF TO-126F-3L SVF2N60NF Pb free Tube SVF2N60F TO-220F-3L SVF2N60F Pb free Tube SVF2N60FG TO-220F-3L SVF2N60FG Halogen free Tube SVF2N60T TO-220-3L SVF2N60T Pb free Tube Http://www.silan.com.cn Page 1 of 13
SVF2N60D TO-252-2L SVF2N60D Pb free Tube SVF2N60DTR TO-252-2L SVF2N60D Pb free Tape & Reel Http://www.silan.com.cn Page 2 of 13
ABSOLUTE MAXIMUM RATINGS (T C=25 C unless otherwise noted) Ratings Characteristics Symbol SVF2N6 0M(G)/D SVF2N 60MJ SVF2 N60N SVF2N 60NF SVF2 N60T SVF2N 60F(G) Unit Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Drain Current T C=25 C I D 2.0 T C=100 C 1.3 Drain Current Pulsed I DM 8 A Power Dissipation(T C=25 C) -Derate above 25 C P D 34 35 30 16 44 23 W 0.27 0.28 0.24 0.13 0.35 0.18 W/ C Single Pulsed Avalanche Energy(Note 1) E AS 115 mj Operation Junction Temperature Range T J -55~+150 C Storage Temperature Range T stg -55~+150 C A THERMAL CHARACTERISTICS Characteristics Ratings Symb SVF2N60 SVF2N SVF2N SVF2N SVF2 SVF2N ol M(G)/D 60MJ 60N 60NF N60T 60F(G) Unit Thermal Resistance, Junction-to-Case R θjc 3.7 3.57 4.17 7.81 2.86 5.56 C/W Thermal Resistance, Junction-to-Ambient R θja 110 110 62.5 120 62.5 120 C/W ELECTRICAL CHARACTERISTICS (T C=25 C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage B VDSS V GS=0V, I D=250µA 600 -- -- V Drain-Source Leakage Current I DSS V DS=600V, V GS=0V -- -- 1.0 µa Gate-Source Leakage Current I GSS V GS=±30V, V DS=0V -- -- ±100 na Gate Threshold Voltage V GS(th) V GS= V DS, I D=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance R DS(on) V GS=10V, I D=1.0A -- 3.7 4.2 Ω Input Capacitance C iss -- 250.1 -- V DS=25V,V GS=0V, Output Capacitance C oss -- 35.7 -- f=1.0mhz Reverse Transfer Capacitance C rss -- 1.1 -- pf Turn-on Delay Time t d(on) V DD=300V,I D=2.0A, -- 9.2 -- Turn-on Rise Time t r R G=25Ω -- 23.4 -- Turn-off Delay Time t d(off) -- 15.3 -- ns Turn-off Fall Time t f (Note 2,3) -- 20.1 -- Total Gate Charge Q g V DS=480V,I D=2.0A, -- 5.67 -- Gate-Source Charge Q gs V GS=10V -- 1.74 -- nc Gate-Drain Charge Q gd (Note 2,3) -- 1.99 -- Http://www.silan.com.cn Page 3 of 13
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current I S Integral Reverse P-N -- -- 2.0 Junction Diode in the Pulsed Source Current I SM -- -- 8.0 MOSFET Diode Forward Voltage V SD I S=2.0A,V GS=0V -- -- 1.4 V Reverse Recovery Time T rr I S=2.0A,V GS=0V, Reverse Recovery Charge Q rr di F/dt=100A/µS -- 1.03 -- µc 1. L=30mH, I AS=2.52, V DD=145V, R G=25Ω, starting T J=25 C; 2. Pulse Test: Pulse width 300μs,Duty cycle 2%; 3. Essentially independent of operating temperature. A -- 356.75 -- ns TYPICAL CHARACTERISTICS Drain Current ID(A) 10 1 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Variable VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V VGS=10V VGS=15V 1.250µS pulse test 2.TC=25 C 0.1 0.1 1 10 100 Drain Current ID(A) 10 1 0.1-55 C 25 C 150 C 1.250µS pulse test 2.VDS=50V 0 1 2 3 4 5 6 7 8 9 10 Drain-Source Voltage VDS(V) Gate-Source Voltage VGS(V) 8 Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 Drain-Source On-Resistance RDS(on)(Ω) 7 6 5 4 3 2 1 VGS=10V VGS=20V Note: TJ=25 C Reverse Drain Current IDR(A) 1-55 C 25 C 150 C 1.250µS pulse test 2.VGS=0V 0 0.1 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 Drain Current ID(A) Source-Drain Voltage VSD(V) Http://www.silan.com.cn Page 4 of 13
TYPICAL CHARACTERISTICS(CONTINUED) Capasistance(pF) 600 500 400 300 200 100 Figure 5. Capacitance Characteristics Ciss Coss Crss Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 1. VGS=0V 2. f=1mhz 0 0.1 1 10 100 Gate-Source Voltage VGS(V) 12 10 8 6 4 2 Figure 6. Gate Charge Characteristics VDS=120V VDS=300V VDS=480V Note: ID=2.0A 0 0 1 2 3 4 5 6 Drain-Source Voltage VDS(V) Total Gate Charge Qg(nC) 1.2 Figure 7. Breakdown Voltage Variation vs. Temperature 3.0 Figure 8. On-resistance Variation vs. Temperature Drain-Source Breakdown Voltage(Normalized) BVDSS 1.1 1.0 0.9 1. VGS=0V 2. ID=250µA 0.8-100 -50 0 50 100 150 200 Drain-Source On-Resistance (Normalized) RDS(on) 2.5 2.0 1.5 1.0 0.5 1. VGS=10V 2. ID=1.0A 0.0-100 -50 0 50 100 150 200 Junction Temperature TJ( C) Junction Temperature TJ( C) 10 2 Figure 9-1. Max. Safe Operating Area(SVF2N60M(G)/D) 10 2 Figure 9-2. Max. Safe Operating Area(SVF2N60MJ) Drain Current - ID(A) 10 1 10 0 10-1 10-2 Operation in This Area is Limited by RDS(ON) DC 1.TC=25 C 2.Tj=150 C 3.Single Pulse 10ms 1ms 100µs 10 0 10 1 10 2 10 3 Drain Current - ID(A) 10 1 10 0 10-1 10-2 Operation in This Area is Limited by RDS(ON) DC 1.TC=25 C 2.Tj=150 C 3.Single Pulse 10ms 1ms 100µs 10 0 10 1 10 2 10 3 Drain-Source Voltage - V DS(V) Drain-Source Voltage - V DS(V) Http://www.silan.com.cn Page 5 of 13
TYPICAL CHARACTERISTICS (CONTINUED) 10 2 Figure 9-3. Max. Safe Operating Area(SVF2N60T) 10 2 Figure 9-4. Max. Safe Operating Area(SVF2N60F(FG)) Drain Current - ID(A) 10 1 10 0 10-1 10-2 Operation in This Area is Limited by RDS(ON) DC 1.TC=25 C 2.Tj=150 C 3.Single Pulse 10ms 1ms 100µs 10 0 10 1 10 2 10 3 Drain-Source Voltage - V DS (V) Drain Current - ID(A) 10 1 10 0 10-1 10-2 Operation in This Area is Limited by RDS(ON) DC 1.TC=25 C 2.Tj=150 C 3.Single Pulse 10ms 1ms Drain-Source Voltage - V DS (V) 100µs 10 0 10 1 10 2 10 3 10 2 Figure 9-5. Max. Safe Operating Area(SVF2N60N) 10 2 Figure 9-6. Max. Safe Operating Area(SVF2N60NF) 10 1 Operation in This Area is Limited by RDS(ON) 10 1 Operation in This Area is Limited by RDS(ON) Drain Current - ID(A) 10 0 10-1 10-2 DC 1.TC=25 C 2.Tj=150 C 3.Single Pulse 10ms 1ms 100µs 10 0 10 1 10 2 10 3 Drain Current - ID(A) 10 0 10-1 10-2 DC 1.TC=25 C 2.Tj=150 C 3.Single Pulse 10ms 1ms 100µs 10 0 10 1 10 2 10 3 Drain-Source Voltage - V DS (V) Drain-Source Voltage - V DS (V) 2.0 Figure 10. Max. Drain Current vs. Case Temperature 1.5 Drain Current -ID (A) 1.0 0.5 0 25 50 75 100 125 150 Case Temperature T C ( C) Http://www.silan.com.cn Page 6 of 13
TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform 12V 200nF 50KΩ 300nF Same Type as DUT VDS VGS 10V Qg Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform VGS VDS RL VDD VDS 90% 10V RG DUT 10% VGS td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform VDS L BVDSS EAS = 1 2 LI AS 2 BVDSS BVDSS - VDD ID IAS 10V tp RG DUT VDD VDD ID(t) VDS(t) tp Time Http://www.silan.com.cn Page 7 of 13
PACKAGE OUTLINE TO-126F-3L 3.20±0.10 3.80±0.10 8.00±0.20 φ3.05±0.10 15.00±0.50 1.90 11.00±0.20 1.27 0.76±0.10 4.60±0.20 2.30±0.20 0.50±0.10 2.00±0.10 TO-220-3L 10.0±0.3 1.2±0.2 4.5±0.2 6.10~7.00 3.7±0.2 13.1±0.5 15.1~16.1 3.95MAX 1.30±0.30 1.80~2.80 0.80±0.20 2.54TYP 0.5±0.2 Http://www.silan.com.cn Page 8 of 13
PACKAGE OUTLINE (continued) TO-251D-3L 6.60±0.10 5.10~5.46 0.46~0.58 2.30±0.10 3.50REF 10.70±0.30 6.10±0.10 2.286±0.10 0.76±0.10 TO-251J-3L 6.35~6.73 4.95~5.46 8.89~9.65 5.97~6.22 0.89~1.27 2.18~2.39 0.46~0.89 2.29TYP 0.64~0.89 0.46~0.61 0.89~1.14 Http://www.silan.com.cn Page 9 of 13
PACKAGE OUTLINE (continued) TO-252-2L(1) 6.60±0.3 2.30±0.20 5.10~5.46 0.45~0.65 Eject pin(note1) 10.10±0.50 0.0~0.127 6.1±0.3 0.80±0.20 2.30 TYP 0.76±0.10 2.90REF 1.4~1.7 0.45~0.65 NOTE1:There are two conditions for this position:has an eject pin or has no eject pin. TO-252-2L(2) 6.50±0.30 2.40±0.20 0.80±0.20 0.95~1.70 5.30±0.20 b1 2.30 TYP 0.50±0.20 2.5~3.5 9.40~10.40 0.5±0.2 0.0~0.15 1.25~1.80 0.5±0.2 5.2~6.30 A 3.80 REF 3.80 REF Note: Due to different plastics packaging moulds: 1.b1 has two values: 0.80±0.20 or 0.50±0.20; 2.There are shape A and B for the heatsink. B Http://www.silan.com.cn Page 10 of 13
PACKAGE OUTLINE (continued) TO-126-3L(1) 2.7±0.2 7.60±0.20 1.3±0.2 10.6~11.0 φ3.1±0.1 0.00~0.30 2.2±0.10 15.5±0.2 1.27±0.10 0.76±0.10 2.29TYP 2.29TYP 0.45~0.60 TO-126-3L(2) 2.8±0.1 8.00±0.20 3.8 1.67±0.1 11.0±0.20 φ3.2±0.1 15.0±0.5 1.37 0.76±0.10 2.3±0.20 2.3±0.20 0.5±0.20 Http://www.silan.com.cn Page 11 of 13
PACKAGE OUTLINE (continued) TO-220F-3L 3.30±0.25 10.03±0.30 Φ3.20±0.20 2.55±0.25 4.72±0.30 15.80±0.50 15.75±0.50 6.70±0.30 2.80±0.30 1.47MAX 9.80±0.50 0.80±0.15 2.54 TYPE 0.50±0.15 Disclaimer: Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers! Http://www.silan.com.cn Page 12 of 13
ATTACHMENT Revision History Date REV Description Page 2010.09.20 1.0 Original 2010.10.21 1.1 Modify TYPICAL CHARACTERISTICS, PACKAGE OUTLINE, the template of Datasheet 2011.06.28 1.2 Add the package of TO-251D-3L, TO-251J-3L, TO-126-3L 2011.09.01 1.3 Modify PACKAGE OUTLINE 2011.11.16 1.4 Delete the package of TO-251-3L 2012.03.12 1.5 Add the halogen free information of SVF2N60F 2012.06.04 1.6 Modify the values of T rr and Q rr; Update the package outline of TO-251D- 3L 2012.07.17 1.7 Add the package of TO-126F-3L 2012.11.13 1.8 Add the package of TO-126-3L(2) 2012.12.17 1.9 Modify PACKAGE OUTLINE 2013.02.05 2.0 Add the halogen free information of SVF2N60M Http://www.silan.com.cn Page 13 of 13