N-Channel ENHANCEMENT MODE POWER MOSFET 0V

Similar documents
3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range

SE2305. SOT-23 Plastic-Encapsulate MOSFETS WILLAS ELECTRONIC CORP. P-Channel 8-V(D-S) MOSFET. FEATURE TrenchFET Power MOSFET SOT-23

RM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information

Product Summary. BV DSS typ. 84 V. R DS(ON) typ. 6.8 mω I D 60 A

SG40N04S 40V N-CHANNEL POWER MOSFET

RM1216. P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package marking and ordering information

Characteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0.

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 30.4 (3) T A=70 o C 24.2 (3) Pulsed Drain Current I DM 100 A 69.4.

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 36.1 (3) T A=70 o C 28.8 (3) Pulsed Drain Current I DM 100 A 78.1.

N-Channel Power MOSFET 100V, 160A, 5.5mΩ

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ

Small Signal MOSFET 115 ma, 60 V

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

Characteristics Symbol Rating Unit

MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω

N-Channel Power MOSFET 100V, 46A, 16mΩ

N-Channel Power MOSFET 600V, 18A, 0.19Ω

YJG80G06A. N-Channel Enhancement Mode Field Effect Transistor

MDV1548 Single N-Channel Trench MOSFET 30V

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited)

MDV1545 Single N-Channel Trench MOSFET 30V

N- and P-Channel 60V (D-S) Power MOSFET

N-Channel Power MOSFET 30V, 78A, 3.8mΩ

N-Channel Power MOSFET 40V, 121A, 3.3mΩ

N-Channel Power MOSFET 100V, 81A, 10mΩ

N-Channel Power MOSFET 60V, 70A, 12mΩ

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω

MDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ

N-Channel Power MOSFET 500V, 9A, 0.9Ω

N-Channel Power MOSFET 600V, 11A, 0.38Ω

N-Channel Super Junction Power MOSFET

20V P-Channel Enhancement-Mode MOSFET

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

N-Channel Power MOSFET 150V, 9A, 65mΩ

UNISONIC TECHNOLOGIES CO., LTD

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ

RM1002. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Marking:1002

P-Channel Power MOSFET -40V, -22A, 15mΩ

Features. U-DFN (Type F) Pin Out Bottom View

N-Channel Power MOSFET 40V, 135A, 3.8mΩ

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω

Preliminary TSM9N50 500V N-Channel Power MOSFET

Dual P-Channel MOSFET -60V, -12A, 68mΩ

SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω

Product Summery. Applications

YJS12N10A. N-Channel Enhancement Mode Field Effect Transistor

N-Channel Power MOSFET 600V, 18A, 0.19Ω

MDS9652E Complementary N-P Channel Trench MOSFET

N-Channel Power MOSFET 40V, 3.9A, 45mΩ

N-Channel Power MOSFET 60V, 38A, 17mΩ

ACE3006M N-Channel Enhancement Mode MOSFET

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

KS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings

N-Channel Power MOSFET 150V, 1.4A, 480mΩ

P-Channel 20-V (D-S) MOSFET

TSM V P-Channel MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

AOD436 N-Channel Enhancement Mode Field Effect Transistor

TSM V P-Channel MOSFET

FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω

MDP15N075 Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ

Features. Bottom View. Top View Bottom View

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω

ACE2020M N-Channel 200-V MOSFET

N-Channel 20-V (D-S) MOSFET

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.

TSM V P-Channel MOSFET

TSM1N60L 600V N-Channel Power MOSFET

TSM6866SD 20V Dual N-Channel MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT4411

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D

UNISONIC TECHNOLOGIES CO., LTD UT4413

N-Channel 700-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET

Dual N-channel Enhancement-mode Power MOSFETs

N-Channel Power MOSFET 700V, 11A, 0.38Ω

TSM4936D 30V N-Channel MOSFET

TSM V N-Channel MOSFET

P-Channel 60-V (D-S) MOSFET

TSM V P-Channel MOSFET

TSM V N-Channel MOSFET

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω

YJG85G06A. N-Channel Enhancement Mode Field Effect Transistor

Green. Features G S. Pin Out Top View. Part Number Case Packaging DMNH6021SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel

Dual N-Channel MOSFET 30V, 20A, 20mΩ

D1/D2 S1 G1 S2 G2 TO-252-4L

N-Channel 30-V (D-S) MOSFET

FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET

N-Channel Power MOSFET 600V, 1A, 10Ω

G2 S2 S1 G1 SO-8. Symbol Parameter V ±20 ±20 V A A A 2.0 W Linear Derating Factor W/ C Storage Temperature Range

AOD405 P-Channel Enhancement Mode Field Effect Transistor

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

Transcription:

PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION The uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. The meet the RoHS and Green Product requirement, 100% EAS and 100% Rg guaranteed with full function reliability approved. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V I D @T C =25 100 A Continuous Drain Current 1 I D @T C =70 80 A Pulsed Drain Current 1 I DM 240 A Continuous Drain Current Total Power Dissipation I D @T A =25 16 A I D @T A =70 13 A P D @T C =25 83 W P D @T A =25 2.3 W Single Pulse Avalanche Energy, L=0.1mH E AS 140 mj Single Pulse Avalanche Current, L=0.1mH I AS 53 A Operating Junction and Storage Temperature Range T J, T STG -55 ~ +150 Thermal Data Parameter Symbol Conditions Max. Value Unit Thermal Resistance Junction-ambient 2 R θja Steady State 55 / W Thermal Resistance Junction-case 2 R θjc Steady State 1.5 /W P 1

Electrical Characteristics (Tj = 25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 60 - - V V GS =0, I D =250uA Gate Threshold Voltage V GS(th) 2 3 4 V V DS =V GS, I D =250uA Gate-Source Leakage Current I GSS - - ±100 na V GS = ±20V Drain-Source Leakage Current I DSS - - 1 ua V DS =48V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - 4.6 5.8 mω V GS =10V, I D =30A Total Gate Charge Q g - 118 - Gate-Source Charge Q gs - 28 - Gate-Drain ( Miller ) Change Q gd - 45 - Turn-on Delay Time T d(on) - 25 - Rise Time T r - 19 - Turn-off Delay Time T d(off) - 85 - Fall Time T f - 43 - Input Capacitance C iss - 4871 - Output Capacitance C oss - 243 - Reverse Transfer Capacitance C rss - 124 - nc ns pf I D =30A V DS =30V V GS =10V V DS =30V I D =30A V GS =10V R G =3Ω V GS =0V V DS =30V f=1.0mhz Gate Resistance Rg - 1.5 - Ω f=1.0mhz Guaranteed Avalanche Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Single Pulse Avalanche Energy 4 EAS 80 - - mj VDD=30V, L=0.1mH, IAS=40A Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Diode Forward Voltage V SD - 0.8 1.3 V I S =20A, V GS =0V Reverse Recovery Time t rr - 36 - ns Reverse Recovery Charge Q rr 53 - nc I F =30A, di/dt=100a/μs, T J =25 Notes: 1. The data tested by pulsed, pulse width 300us, duty cycle 2%. 2. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. R θja shown below for single device operation on FR-4 in still air. 3. Package Limitation current is 100A. 4. The Min. value is 100% EAS tested guarantee. P 2

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 On-Resistance vs. Drain Current Fig.4 Normalized R DSON vs. T J Fig.5 Normalized V GS(th) vs. T J Fig.6 Forward Characteristics of Reverse P 3

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristic Fig.9 Safe Operating Area Fig.10 Power Dissipation Fig.11 Drain Current vs. T J Fig.12 Transient Thermal Impedance P 4

Mounting and Storage Conditions(Reflow soldering Temperature profile) Willas has set the following requirements for the heat resistance of components. [Assumption] Moisture absorption prior to the reflow/flow soldering of components in dry pack. With components in dry pack, reflow/flow soldering shall be completed within 168 hours after unpacking (Storage environment:30 C 70%RH) peak 230 C E 217 C *3 Temperature [ C] Preheating Room temp. A B C D 180 C 120 C Time [sec] Conditions Components size 1 28mm or less Unit A Temp. rise gradient 2 1-3 C/sec B Heating time 50-150 sec Heating temperature 120-180 C C Temp. rise gradient 2 1-3 C/sec D Time over 230 C 90 sec E Peak temperature 260 C Peak-temp. hold time 1-5 sec Soldering 2 times *1.Length or width, whichever is the greater outside dimension (length for a rectangular component) *2.Temperatures and time for A through E in the table above shall be measured on the top surface of the components size. *3.Time over 217 C be 90-150 seconds. P 5

Outline Drawing REF. Millimeter Millimeter REF. Min. Max. Min. Max. A 0.80 1.00 E 5.70 5.90 A1 0.00 0.05 e 1.27 BSC. b 0.35 0.49 H 5.95 6.20 c 0.254 Ref. L1 0.10 0.18 D 4.90 5.10 G 0.60 Ref. F 1.40 Ref. K 4.00 Ref. Dimensions in inches and (millimeters) Rev.A P 6

Suggested Soldering Pad Layout. (. ). (. ).024(0.62). ( ) Dimensions in inches and (millimeters) RevA P 7

Reel Taping Specification - Surface Mount Device Package Packing Option Immediate Intermediate Intermediate Outer box Quantity Container Quantity Quantity PR-PAK 13" Reel 3000 pcs (reel) Box 6000 pcs (2 reels) 30 K (5Box) P 8

Packing Method Trailer>17cm Leader>40cm LABEL LABEL P 9

Ordering Information: Device PN -T (1) H (2) -WS Note: (1) Packing code, Tape & Reel Packing (2) Haloge free product for packing code suffix H Packing Tape&Reel: 3 Kpcs/Reel ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. This is the preliminary specification. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. P 10