HiPerFED² M I F 2x 0 t 35ns rr High Performance Fast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPGHB Backside: cathode Features / dvantages: pplications: Package: TO-27 Planar passivated chips ery low leakage current ery short recovery time Improved thermal behaviour ery low Irm-values ery soft recovery behaviour valanche voltage rated for reliable operation Soft reverse recovery for low EMI/FI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ntiparallel diode for high frequency switching devices ntisaturation diode Snubber diode Free wheeling diode ectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline ohs compliant Epoxy meets UL 9-0
Fast Diode Symbol SM M I I I M Definition max. reverse recovery current 0 ; 200 reverse recovery time 200 /µs T 25 T 150 T 25 T T 25 T atings min. typ. max. F forward voltage drop I 0 T 25 1.3 F T 135 thermal resistance junction to case 0.7 K/W F max. non-repetitive reverse blocking voltage reverse current, drain current onditions T 25 F0 threshold voltage T 175 0. for power loss calculation only r F slope resistance 9.2 mω thj thh max. repetitive reverse blocking voltage T 25 average forward current thermal resistance case to heatsink I F 0 rectangular d 0.5 P tot total power dissipation T 25 215 W T 150 SM max. forward surge current t 10 ms; (50 Hz), sine; 0 T 5 J junction capacitance 150 f 1 MHz T 25 0 T 175 5 8.5 35 5 1 1.71 1.07 1. 0 Unit µ m K/W 50 pf 3 ns ns
Package TO-27 atings Symbol Definition onditions min. typ. max. Unit I MS MS current 1) per terminal 70 T virtual junction temperature -55 175 T op operation temperature -55 150 T stg storage temperature -55 150 Weight M D F mounting torque 0.8 mounting force with clip 20 1.2 120 g Nm N Product Marking Part number Logo Part No. ssembly Line ssembly ode Date ode IXYS XXXXXXXXX Zyyww abcd D P G HB Diode HiPerFED extreme fast urrent ating [] ommon athode everse oltage [] TO-27D (3) Ordering Standard Part Number Marking on Product Delivery Mode Quantity ode No. DPGHB DPGHB Tube 30 5088 Equivalent ircuits for Simulation * on die level T 175 I 0 0 Fast Diode 0 max threshold voltage 0. 0 max slope resistance * 7. mω
Outlines TO-27 E 2 Ø P Ø P1 D2 Q 2x E2 L1 2x b2 b 2x e D L 3x b 1 S E1 D1 Sym. Inches Millimeter min. max. min. max. 0.185 09.70 5.30 1 0.087 0.102 2.21 2.59 2 0.059 0.098 1.50 2.9 D 0.819 0.85 20.79 21.5 E 0.10 0.0 15.8 1.2 E2 0.170 1.31 5.8 e 15 BS 5. BS L 0.7 0.0 19. 20.30 L1-0.177 -.9 Ø P 0.10 0.1 3.55 3.5 Q 12 5.38.19 S 2 BS.1 BS b 0.039 0.055 0.99 1.0 b2 0.05 0.09 1.5 2.39 b 0.102 0.135 2.59 3.3 c 0.015 0.035 0.38 0.89 D1 0.515-13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530-13.5 - Ø P1-9 - 7.39
Fast Diode 0. 18 0 0 [] T 150 0.5 Q 0. rr [μ] 0.3 0 1 1 I M 12 [] 10 0 20 25 200 0.1 0.0 0. 0.8 1.2 1. 2.0 F [ ] -dif [/μs] Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge versus F T 125 8 T 125 200 [/μs] Fig. 3 Typ. reverse recov. current I M 1. 1.2 1.0 70 T 125 200 700 00 500 t fr F 7 5 K f 0.8 0. 0. I M 0 [ns] 50 0 t fr 00 [ns] 200 T 125 200 F [] 3 2 0 0 120 10 T [ ] 0 [/μs] Fig. Typ. dynamic parameters Fig. 5 Typ. reverse recov. time,i M versus T 100 1 [/μs] Fig. Typ. forward recovery voltage F &timet fr versus di F 12 10 8 E rec [μj] 2 T 125 200 0 0.8 0. Z thj 0. [K/W] 0 [/μs] Fig. 7 Typ. recovery energy E rec 0.0 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case