Schottky Rectifier, 1.1 A 11DQ9, 11DQ DO-24AL Cathode Anode FEATURES Low profile, axial leaded outline High frequency operation Very low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Lead (Pb)-free plating Designed and qualified for industrial level PRODUCT SUMMARY I F(AV) V R 1.1 A 9/ V DESCRIPTION The 11DQ.. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform 1.1 A V RRM 9/ V I FSM t p = 5 µs sine 85 A V F 1 Apk, T = 25 C.85 V T Range - 4 to 15 C VOLTAGE RATINGS PARAMETER SYMBOL 11DQ9 11DQ UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 9 V ABSOLUTE MAXIMUM RATINGS load Maximum average forward current See fig. 4 I F(AV) 5 % duty cycle at T C = 75 C, rectangular waveform 1.1 Maximum peak one cycle 5 µs sine or 3 µs rect. pulse Following any rated 85 A non-repetitive surge current I FSM condition and with rated See fig. 6 ms sine or 6 ms rect. pulse V RRM applied 14 Non-repetitive avalanche energy E AS T = 25 C, I AS =.5 A, L = 8 mh 1. m Current decaying linearly to zero in 1 µs Repetitive avalanche current I AR Frequency limited by T maximum V A = 1.5 x V R typical.5 A Document Number: 9327 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 6-Nov-8 1
11DQ9, 11DQ Schottky Rectifier, 1.1 A ELECTRICAL SPECIFICATIONS Maximum forward voltage drop See fig. 1 (1) Pulse width < 3 µs, duty cycle < 2 % V FM (1) 1 A.85 T = 25 C 2 A.96 1 A.68 T = 125 C 2 A.78 Maximum reverse leakage current T = 25 C.5 I RM See fig. 2 V R = Rated V R T = 125 C 1. ma Typical junction capacitance C T V R = 5 V DC (test signal range khz to 1 MHz) 25 C 35 pf Typical series inductance L S Measured lead to lead 5 mm from package body 8. nh Maximum voltage rate of change dv/dt Rated V R V/µs V THERMAL - MECHANICAL SPECIFICATIONS Maximum junction and storage temperature range T (1), T Stg - 4 to 15 C Maximum thermal resistance, junction to ambient Typical thermal resistance, junction to lead Approximate weight Marking device R tha R thl DC operation Without cooling fin DC operation See fig. 4 Case style DO-24AL (DO-41) dp (1) tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dt R tha 81 C/W.33 g.12 oz. 11DQ9 11DQ www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 9327 2 Revision: 6-Nov-8
Schottky Rectifier, 1.1 A 11DQ9, 11DQ Instantaneous Forward Current - I F 1 T = 15 C T = 125 C T = 25 C.1.4.8 1.2 1.6 Forward Voltage Drop - V FM Fig. 1 - Maximum Forward Voltage Drop Characteristics unction Capacitance - C T (pf) Fig. 3 - Typical unction Capacitance vs. Reverse Voltage Allowable Case Temperature ( C) 2 4 6 8 15 12 9 6 3 T = 25 C Reverse Voltage - V R Square wave (D =.5) 8% Rated V applied R DC see note (1).3.6.9 1.2 1.5 Average Forward Current - IF (AV) Fig. 4 - Maximum Ambient Temperature vs. Average Forward Current Reverse Current - I R (ma) 1.1.1.1.1 T = 15 C 125 C 25 C Average Power Loss (Watts).8.6.4.2 D =.2 D =.25 D =.33 D =.5 D =.75 RMS Limit DC 2 4 6 8 Reverse Voltage - V R Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage.3.6.9 1.2 1.5 Average Forward Current - IF (AV) Fig. 5 - Forward Power Loss Characteristics (1) Formula used: T C = T - (Pd + Pd REV ) x R thc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = 8 % rated V R Document Number: 9327 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 6-Nov-8 3
11DQ9, 11DQ Schottky Rectifier, 1.1 A Non-Repetitive Surge Current - I FSM At Any Rated Load Condition And With Rated Vrrm RRM Applied Following Surge Square Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Non-Repetitive Surge Current ORDERING INFORMATION TABLE Device code 11 D Q TR 1 2 3 4 5 1-11 = 1.1 A (axial and small packages - current is x ) 2 - D = DO-41 package 3 - Q = Schottky Q.. series 4 - = Voltage ratings 5 - TR = Tape and reel package (5 pcs) None = Box package ( pcs) 9 = 9 V = V Dimensions Part marking information Packaging information LINKS TO RELATED DOCUMENTS http://www.vishay.com/doc?95241 http://www.vishay.com/doc?9534 http://www.vishay.com/doc?9538 www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 9327 4 Revision: 6-Nov-8
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