MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching motor control applications. Features Similar to the Popular NPN 2N6284 and the PNP 2N6287 Rugged RBSOA Characteristics Monolithic Construction with Builtin CollectorEmitter Diode These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Max Unit CollectorEmitter Voltage V CEO 1 Vdc CollectorBase Voltage V CB 1 Vdc EmitterBase Voltage V EB 5. Vdc Collector Current Continuous Peak I C 2 4 Adc Base Current I B.5 Adc Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 16 1.28 W W/ C T J, T stg 65 to + 15 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.78 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 1 VOLTS, 16 WATTS SOT93 (TO218) CASE 34D P D, POWER DISSIPATION (WATTS) 16 14 12 1 8 6 4 2 25 5 75 1 125 15 175 2 T C, CASE TEMPERATURE ( C) Figure 1. Power Derating TO247 CASE 34L STYLE 3 NOTE: Effective June 212 this device will be available only in the TO247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 212 May, 212 Rev. 7 1 Publication Order Number: MJH6284/D
MARKING DIAGRAMS TO247 TO218 MJH628x AYWWG AYWWG MJH628x 1 BASE 2 COLLECTOR 3 EMITTER 1 BASE 2 COLLECTOR 3 EMITTER MJH628x = Device Code x = 4 or 7 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Order Number Package Type Shipping MJH6284G MJH6287G MJH6284G MJH6287G TO218 (PbFree) TO218 (PbFree) TO247 (PbFree) TO247 (PbFree) 3 Units / Rail 3 Units / Rail 3 Units / Rail 3 Units / Rail 2
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = Adc, I B = ) V CEO(sus) 1 Vdc Collector Cutoff Current (V CE = 5 Vdc, I B = ) I CEO madc Collector Cutoff Current (V CE = Rated V CB, V BE(off) = 1.5 Vdc) (V CE = Rated V CB, V BE(off) = 1.5 Vdc, T C = 15 C) Emitter Cutoff Current (V BE = 5. Vdc, I C = ) I EBO madc ON CHARACTERISTICS (Note 1) DC Current Gain (I C = 1 Adc, V CE = 3. Vdc) (I C = 2 Adc, V CE = 3. Vdc) I CEX h FE 75 1.5 5. 18, madc CollectorEmitter Saturation Voltage (I C = 1 Adc, I B = 4 madc) (I C = 2 Adc, I B = 2 madc) V CE(sat) 3. Vdc BaseEmitter On Voltage (I C = 1 Adc, V CE = 3. Vdc) V BE(on) 2.8 Vdc BaseEmitter Saturation Voltage (I C = 2 Adc, I B = 2 madc) V BE(sat) 4. Vdc DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = 1 Adc, V CE = 3. Vdc, f = MHz) f T 4. MHz Output Capacitance (V CB = 1 Vdc, I E =, f = MHz) MJH6284 MJH6287 SmallSignal Current Gain (I C = 1 Adc, V CE = 3. Vdc, f = khz) h fe 3 SWITCHING CHARACTERISTICS Delay Time Resistive Load C ob Symbol NPN Typical Rise Time V CC = 3 Vdc, I C = 1 Adc t r.3.3 I B1 = I B2 = 1 ma Storage Time Duty Cycle = % t s 4 6 PNP pf Unit t d s Fall Time t f 3.5 1. Pulse test: Pulse Width = 3 s, Duty Cycle = %. R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D 1, MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE I B 1 ma MSD61 USED BELOW I B 1 ma V2 APPROX +12 V V1 APPROX - 8. V t r, t f, 1 ns DUTY CYCLE = % 25 s R B 51 D 1 + 4. V TUT 8. k 5 V CC - 3 V R C SCOPE for t d and t r, D 1 is disconnected and V2 = BASE NPN MJH6284 COLLECTOR EMITTER BASE PNP MJH6287 COLLECTOR EMITTER For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic 3
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5.3.2.7.5.3.2 D =.5.2.5.2.1 SINGLE PULSE R JC (t) = r(t) R JC R JC =.78 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) R JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2.1.1.2.3.5.2.3.5 3. 5. 1 2 3 5 1 2 3 5 t, TIME (ms) 1 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMPS) FBSOA, FORWARD BIAS SAFE OPERATING AREA 5 2 1 5..5.2.5 T J = 15 C ms.5 ms ms 5. ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @T C = 25 C (SINGLE PULSE) 5. 1 2 5 1 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc Figure 5. MJH6284, MJH6287 IC, COLLECTOR CURRENT (AMPS) 5 4 3 2 1 L = 2 H I C /I B 1 T C = 25 C V BE(off) = - 5. V R BE = 47 DUTY CYCLE = 1% 1 2 3 4 6 8 1 11 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided T J(pk) 15 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 6. Maximum RBSOA, Reverse Bias Safe Operating Area 4
hfe, DC CURRENT GAIN NPN 3 V CE = 3. V 2 T J = 15 C 1 25 C 5 3 2-55 C 15.2.3.5 3. 5. 7. 1 2 hfe, DC CURRENT GAIN PNP 5 V CE = 3. V 3 T J = 15 C 2 25 C 1 7-55 C 5 3.2.3.5.7 3. 5. 7. 1 2 Figure 7. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.8 2.6 2.4 2.2 1.8 1.6 1.4 1.2.8 I C = 5. A 3. 5. 1 2 3 5 1 I B, BASE CURRENT (ma) T J = 25 C I C = 15 A I C = 1 A 2 3 5 1 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.8 2.6 2.4 2.2 1.8 1.6 1.4 1.2.8 3. 5. 1 2 3 5 1 I B, BASE CURRENT (ma) I C = 1 A I C = 5. A I C = 15 A 2 3 5 1 Figure 8. Collector Saturation Region 3. 3. 2.5 T J = 25 C 2.5 T J = 25 C V, VOLTAGE (VOLTS) 1.5 V BE @ V CE = 3. V V BE(sat) @ I C /I B = 25 V CE(sat) @ I C /I B = 25 V, VOLTAGE (VOLTS) 1.5 V BE(sat) @ I C /I B = 25 V BE(on) @ V CE = 3. V V CE(sat) @ I C /I B = 25.5.2.3.5.7 3. 5. 7. 1 2 3.5.2.3.5.7 3. 5. 7. 1 2 3 Figure 9. On Voltages 5
PACKAGE DIMENSIONS SOT93 (TO218) CASE 34D2 ISSUE E B Q E C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. K S L U V 1 2 3 G 4 D A J H MILLIMETERS INCHES DIM MIN MAX MIN MAX A --- 2.35 ---.81 B 14.7 15.2.579.598 C 4.7 4.9 85 93 D 1.1 1.3.43.51 E 1.17 1.37.46.54 G 5.4 5.55.213.219 H 3..79 18 J.5.78.2.31 K 3 REF 1.22 REF L --- 16.2 ---.638 Q 4. 4.1 58 61 S 17.8 18.2.71.717 U 4. REF 57 REF V 1.75 REF.69 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR TO247 CASE 34L2 ISSUE F N A K F 2 PL B U L 1 2 3 P Y W J G D 3 PL.25 (.1) M Y Q S C T E H 4 Q.63 (.25) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.32 28.8 8.3 B 15.75 16.26.62.64 C 4.7 5.3 85.29 D 1.4.4.55 E 1.9 2.6.75 2 F 1.65 2.13.65.84 G 5.45 BSC.215 BSC H 1.5 2.49.59.98 J.4.8.16.31 K 19.81 2.83.78.82 L 5.4 6.2.212.244 N 4.32 5.49 7.216 P --- 4.5 --- 77 Q 3.55 3.65 4 44 U 6.15 BSC.242 BSC W 2.87 3.12 13 23 STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 6
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