FDN56N-F85 N-Channel Logic Level PowerTrench MOSFET 6 V,.6 A, 98 mω Features R DS(on) = 98 mω at V GS = 4.5 V, I D =.6 A R DS(on) = 8 mω at V GS = V, I D =.7 A Typ Q g(tot) = 9. nc at V GS = V Low Miller Charge UIS Capability Qualified to AEC Q RoHS Compliant Applications DC/DC converter Motor Drives MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 6 V V GS Gate to Source Voltage ± V Drain Current Continuous (V GS = V).7 I D Pulsed E AS Single Pulse Avalanche Energy (Note ) 74 mj P D Power Dissipation. W T J, T STG Operating and Storage Temperature -55 to +5 o C R θjc Thermal Resistance Junction to Case 75 o C/W R θja Thermal Resistance Junction to Ambient TO-5, in copper pad area o C/W Note: : E AS of 74mJ is % test at L=8mH, I AS =.4A, starting T J = 5 o C A Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 56 FDN56N-F85 SSOT 7 8mm units 5 Semiconductor Components Industries, LLC. September-7, Rev. Publication Order Number: FDN56N-F85/D
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 5μA, V GS = V 6 - - V I DSS Zero Gate Voltage Drain Current On Characteristics Dynamic Characteristics Electrical Characteristics T A = 5 o C unless otherwise noted Switching Characteristics V DS = 48V, - - V GS = V T A = 5 o C - - 5 I GSS Gate to Source Leakage Current V GS = ±V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5μA. V r DS(on) Drain to Source On Resistance I D =.7A, V GS = V - 57 8 I D =.6A, V GS = 6V - 6 88 I D =.6A, V GS = 4.5V 7 98 I D =.7A, V GS = V, T A = 5 o C - 7 5 C iss Input Capacitance - 475 - pf V DS = 5V, V GS = V, C oss Output Capacitance - 6 - pf f = MHz C rss Reverse Transfer Capacitance - - pf R G Gate Resistance f = MHz -.4 - Ω Q g(tot) Total Gate Charge at V V GS = to V - 9. nc V DD = V Q gs Gate to Source Gate Charge -.5 - nc I D =.7A Q gd Gate to Drain Miller Charge -.4 - nc Symbol Parameter Test Conditions Min Typ Max Units μa mω t on Turn-On Time - - ns t d(on) Turn-On Delay Time - 5 - ns t V DD = V, I D =.A r Rise Time -.7 - ns V GS = V, R GEN = 6Ω t d(off) Turn-Off Delay Time - 5. - ns t f Fall Time -. - ns t off Turn-Off Time - -.9 ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD =.7A -.8.5 I SD =.85A -.8. V t rr Reverse Recovery Time - 6. ns I SD =.7A, di SD /dt = A/μs Q rr Reverse Recovery Charge - 7.9. nc
Typical Characteristics POWER DISSIPATION MULTIPLIER...8.6.4.. 5 5 75 5 5 T A, AMBIENT TEMPERATURE( o C) Figure. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, Z θja. DUTY CYCLE - DESCENDING ORDER D =.5...5.. SINGLE PULSE R θja = o C / W CURRENT LIMITED BY PACKAGE V GS = 4.5V V GS = V R θja = o C/W 5 5 75 5 5 T A, AMBIENT TEMPERATURE( o C) Figure. Maximum Continuous Drain Current vs. Case Temperature NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T C. - - - 4 t, RECTANGULAR PULSE DURATION(s) Figure. Normalized Maximum Transient Thermal Impedance P DM t t IDM, PEAK CURRENT (A) V GS = V SINGLE PULSE R θja = o C / W T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 5 - T C 5 - - - 4 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability
Typical Characteristics.. Figure 5. SINGLE PULSE T J = MAX RATED us ms ms ms s DC OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) T A = 5 o C... V DS, DRAIN TO SOURCE VOLTAGE (V) 9 6 Forward Bias Safe Operating Area Figure 6. V GS = V V GS = 6V V GS = 5V V GS = 4.5V V GS = 4V PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V GS =.5V V GS = V 4 V DS, DRAIN TO SOURCE VOLTAGE (V) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 9 6 PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DD = 5V T J = 5 o C T J = 5 o C T J = -55 o C 4 5 V GS, GATE TO SOURCE VOLTAGE (V) 5 5 Transfer Characteristics I D =.7A PULSE DURATION = 8μs DUTY CYCLE =.5% MAX T J = 5 o C T J = 5 o C 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 7. Saturation Characteristics Figure 8. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE..8.6.4.. PULSE DURATION = 8μs DUTY CYCLE =.5% MAX.8 I D =.7A V GS = V.6-8 -4 4 8 6 T J, JUNCTION TEMPERATURE( o C) Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature NORMALIZED GATE THRESHOLD VOLTAGE.4...8.6 V GS = V DS I D = 5μA.4-8 -4 4 8 6 T J, JUNCTION TEMPERATURE( o C) Figure. Normalized Gate Threshold Voltage vs Junction Temperature 4
Typical Characteristics NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE.5..5..95 I D = 5μA.9-8 -4 4 8 6 T J, JUNCTION TEMPERATURE ( o C) Figure. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 8 6 4 ID =.7A V DD = V V DD = 4V V DD = V 6 9 Q g, GATE CHARGE(nC) CAPACITANCE (pf) C iss C oss C rss f = MHz V GS = V. 5 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. Capacitance vs Drain to Source Voltage Figure 4. Figure. Gate Charge vs Gate to Source Voltage 5
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