BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC Current Gain These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 Vdc CollectorBase Voltage V CBO 8 Vdc EmitterBase Voltage V EBO 5. Vdc Collector Current I C Adc Base Current I B 6. Adc Total Device Dissipation @ T C = 25 C Derate above 25 C P D 9.72 W W/ C AMPERE POWER TRANSISTORS 8 VOLTS 9 WATTS BASE PNP COLLECTOR 2, EMITTER 3 BASE NPN COLLECTOR 2, EMITTER 3 Operating and Storage Junction Temperature Range T J, T stg 55 to +5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 3 TO22 CASE 22A STYLE THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.39 C/W MARKING DIAGRAM BD8xxG AY WW BD8xx = Device Code x = 9 or A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping BD89G TO22 5 Units/Rail (PbFree) BD8G TO22 (PbFree) 5 Units/Rail Semiconductor Components Industries, LLC, 23 September, 23 Rev. 7 Publication Order Number: BD89/D
BD89 (NPN), BD8 (PNP) ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit CollectorEmitter Sustaining Voltage (Note ) BV CEO Vdc (I C =. Adc, I B = ) 8 Collector Cutoff Current (V CB = 8 Vdc, I E = ) Emitter Cutoff Current (V BE = 5. Vdc, I C = ) DC Current Gain (I C = 2. A, V CE = 2. V) (I C =. A, V CE = 2. V) CollectorEmitter Saturation Voltage (Note ) (I C = 3. Adc, I B =.3 Adc) BaseEmitter On Voltage (Note ) (I C =. Adc, V CE = 2. Vdc) CurrentGain Bandwidth Product (I C =. Adc, V CE = Vdc, f =. MHz). Pulse Test: Pulse Width 3 s, Duty Cycle 2.%. I CBO. I EBO 2. h FE 3 5 V CE(sat). V BE(on) f T.5 madc madc Vdc Vdc MHz 9 IC, COLLECTOR CURRENT (AMP) 3.3 5 ms dc ms.5 ms ms PD, POWER DISSIPATION (WATTS) 8 7 6 5 3 2. 3 3 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 5 75 25 5 75 T C, CASE TEMPERATURE ( C) Figure. Active Region DC Safe Operating Area (see Note on page 3) Figure 2. PowerTemperature Derating Curve 5 BD89 (NPN) 5 BD8 (PNP) T J = 5 C 2 25 C 2 T J = 5 C hfe, DC CURRENT GAIN 5 2-55 C V CE = 2. V hfe, DC CURRENT GAIN 5 2-55 C 25 C V CE = 2. V 5. 5..2.5. 2. 5. 2.2.5. 2. 5. 2 Figure 3. DC Current Gain 2
BD89 (NPN), BD8 (PNP) V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2..8.. I C =. A.8. A 8. A.6..2 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2..8.. I C =. A. A 8. A.8.6..2 5. 2 5 2 5 2 5 5. 2 5 2 5 2 5 I B, BASE CURRENT (ma) I B, BASE CURRENT (ma) Figure. Collector Saturation Region 2.8 2.8 2. 2. V, VOLTAGE (VOLTS) 2. V BE(sat) = I C /I B =.8 V, VOLTAGE (VOLTS) 2. V BE(sat) @ I C /I B =.8. V BE @ V CE = 2. V. V BE @ V CE = 2. V V CE(sat) @ I C /I B = V CE(sat) @ I C /I B =.2.5. 2. 5. 2.2.5. 2. 5. 2 Figure 5. On Voltages r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE..7.5.3.2..7.5.3.2 D =.5.2..5.2. SINGLE PULSE SINGLE JC (t) = r(t) PULSE JC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) JC (t) P (pk) t t 2 DUTY CYCLE, D = t /t 2...2.3.5..2.3.5. 2. 3. 5. 2 3 5 2 3 5 t, PULSE WIDTH (ms) Figure 6. Thermal Response Note: There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on T J(pk) = 5 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) 5 C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 3
BD89 (NPN), BD8 (PNP) PACKAGE DIMENSIONS TO22 CASE 22A9 ISSUE AG H Q Z L V G B 2 3 N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.62.8 5.75 B.38.5 9.66 8 C.6.9.7.82 D.25.36.6.9 F.2.6 3.6.9 G.95.5 2.2 2.66 H..6 2.8. J..25.36.6 K.5.562 2.7.27 L.5.6.5.52 N.9.2.83 5.33 Q..2 2.5 3. R.8. 2. 2.79 S.5.55.5.39 T.235.255 5.97 6.7 U..5. 7 V.5 ---.5 --- Z ---.8 --- 2. STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33675275 or 83386 Toll Free USA/Canada Fax: 33675276 or 833867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 2 33 79 29 Japan Customer Focus Center Phone: 835875 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BD89/D
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