Nch 25V 8A Power MOSFET Outline V DSS 25V CPT3 R DS(on) (Max.) 3mW I D P D 8A 2W (SC-63) <SOT-428> () (2) (3) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant () Gate (2) Drain (3) Source * BODY DIODE 6) % Avalanche tested Packaging specifications Packaging Taping Application Reel size (mm) 33 Switching Power Supply Tape width (mm) 6 Type Automotive Motor Drive Basic ordering unit (pcs) 2,5 Automotive Solenoid Drive Taping code TL Marking C8N25 Absolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS 25 V T c = 25 C Continuous drain current T c = C * I D * I D Pulsed drain current I D,pulse *2 8. A 4.3 A 32 A Gate - Source voltage V GSS 3 V Avalanche energy, single pulse E AS *3 4.67 mj Avalanche current I AR *3 4. A Power dissipation T c = 25 C T a = 25 C *4 P D 2 W P D.85 W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C /2 24. - Rev.B
Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case R thjc - - 6.25 C/W Thermal resistance, junction - ambient *4 R thja - - 47 C/W Soldering temperature, wavesoldering for s T sold - - 265 C Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma 25 - - V Zero gate voltage drain current I DSS V DS = 25V, V GS = V T j = 25 C - - V DS = 25V, V GS = V T j = 25 C - - ma Gate - Source leakage current I GSS V GS = 3V, V DS = V - - na Gate threshold voltage V GS (th) V DS = V, I D = ma 3. - 5. V Static drain - source on - state resistance R DS(on) V GS = V, I D = 4.A - 225 3 V GS = V, I D = 4.A T j = 25 C - 48 64 mw Forward transfer admittance g fs V DS = V, I D = 4.A 2.7 5.4 - S 2/2 24. - Rev.B
Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V - 44 - Output capacitance C oss V DS = 25V - 8 - pf Reverse transfer capacitance C rss f = MHz - 4 - Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) Fall time t f V DD 25V, V GS = V - 3 - I D = 4.A - 4 - R L = 3.25W - 4 - R G = W - 5 - ns Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g V DD 25V - 25 - Gate - Source charge Q gs I D = 8.A - - nc Gate - Drain charge Q gd V GS = V - - Gate plateau voltage V (plateau) V DD 25V, I D = 8.A - 7.3 - V Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Continuous source current I * S T c = 25 C - - 8 A Pulsed source current I *2 SM - - 32 A Forward voltage V SD V GS = V, I S = 8.A - -.5 V Reverse recovery time t rr Reverse recovery charge Q rr I S = 4.A di/dt = A/ms - - ns - 35 - nc * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 L 5mH, V DD = 5V, Rg = 25W, starting T j = 25 C *4 Mounted on a epoxy PCB FR4 (2mm 2mm.8mm) Pulsed 3/2 24. - Rev.B
Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 2 Power Dissipation : P D /P D max. [%] 8 6 4 2 25 5 75 25 5 75. Operation in this area is limited by R DS(on) P W = ms P W = ms P W = ms Single Pulse.. Junction Temperature : T j [ C] Drain - Source Voltage : V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width T a = 25ºC Single Pulse R th(j-c)(t) = r (t) R th(ch-c) R th(j-c) = 47ºC/W. top D = D =.5 D =. D =.5 D =. D = Single..... Pulse Width : P W [s] 4/2 24. - Rev.B
Avalanche Current : I AS [A] Fig.4 Avalanche Current vs Inductive Load V DD =5V,R G =25W V GF =V,V GR =V Starting T ch =25ºC... Coil Inductance : L [mh] Avalanche Energy : E AS / E AS max. [%] Fig.5 Avalanche Energy Derating Curve vs Junction Temperature 2 8 6 4 2 25 5 75 25 5 75 Junction Temperature : T j [ C] Fig.6 Typical Output Characteristics(I) Fig.7 Typical Output Characteristics(II) 4 3 2 Pulsed V GS =8.V V GS =.V V GS =7.V V GS =6.5V V GS =6.V 8 6 4 2 V GS =.V V GS =8.V Pulsed V GS =7.V V GS =6.5V V GS =6.V V GS =5.5V.2.4.6.8 V GS =5.5V 2 4 6 8 Drain - Source Voltage : V DS [V] Drain - Source Voltage : V DS [V] 5/2 24. - Rev.B
Fig.8 Breakdown Voltage vs. Junction Temperature Fig.9 Typical Transfer Characteristics Normarize Drain - Source Breakdown Voltage : V (BR)DSS [V] 34 32 3 28 26 24 V GS = V I D = ma 22-5 -25 25 5 75 25 5.. V DS = V T a = 25ºC T a = 75ºC T a = 25ºC T a = -25ºC. 2 4 6 8 Junction Temperature : T j [ C] Gate - Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] Fig. Gate Threshold Voltage vs. Junction Temperature 5.5 5. 4.5 4. 3.5 V DS = V I D = ma 3. -5-25 25 5 75 25 5 Junction Temperature : T j [ C] Fig. Transconductance vs. Drain Current Transconductance : g fs [S]. V DS = V T a = -25ºC T a =75ºC T a =25ºC... 6/2 24. - Rev.B
Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage 8 6 4 2 I D = A I D = 5.A 5 5 2 Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) V GS = V.. Gate - Source Voltage : V GS [V] Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature 5 4 3 2 V GS = V I D = 4A -5-25 25 5 75 25 5 Junction Temperature : T j [ºC] 7/2 24. - Rev.B
Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(I) V GS = V T a =25ºC T a =75ºC T a = -25ºC.. Drain Current Dissipation : I D /I D max. (%) Fig.6 Drain Current Derating Curve 2 8 6 4 2 25 5 75 25 5 75 Junction Temperature : T j [ºC] 8/2 24. - Rev.B
Capacitance : C [pf] Fig.7 Typical Capacitance vs. Drain - Source Voltage T a = 25ºC f = MHz V GS = V C rss C iss C oss.. Drain - Source Voltage : V DS [V] Switching Time : t [ns] Fig.8 Switching Characteristics t d(on) t r t f t d(off) V DD = 25V V GS = V R G =W.. Fig.9 Dynamic Input Characteristics Gate - Source Voltage : V GS [V] 2 5 5 V DD = 25V I D = 8A R G =W 5 5 2 25 3 35 4 45 5 Total Gate Charge : Q g [nc] 9/2 24. - Rev.B
Fig.2 Source Current vs. Source - Drain Voltage Fig2 Reverse Recovery Time vs.source Current V GS =V Source Current : I S [A]. T a =25ºC T a =75ºC T a = -25ºC...5. Reverse Recovery Time : t rr [ns] di / dt = A / ms V GS = V. Source-Drain Voltage : V SD [V] Source Current : I S [A] /2 24. - Rev.B
Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3- Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform /2 24. - Rev.B
Dimensions (Unit : mm) CPT3 D b A A2 c B L3 b2 b3 H A L Lp L4 L E L2 c e b x B A A3 l3 l2 l e b6 b5 DIM MILIMETERS INCHES MIN MAX MIN MAX A..5.6 A2 2.2 2.5.87.98 A3.25. b.55.75.22.3 b 5. 5.3.97.29 b2 b3 5..75.2.3 c.4.6.6.24 c.4.6.6.24 D 6.3 6.7.248.264 E 5.4 5.8.23.228 e 2.3.9 HE 9...354.394 L 2.2 2.8.87. L.8.4.3.55 L2.2.8.47.7 L3 L4 5.3.9.29.35 Lp..6.39.63 x -.25 -. DIM MILIMETERS INCHES MIN MAX MIN MAX b5 -. -.4 b6-5.2 -.25 l - 2.5 -.98 l2-5.5 -.27 l3 -. -.394 Dimension in mm/inches 2/2 24. - Rev.B
Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) 3) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 4) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ R2A