Description The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7 µm. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range. Features 5 % cut-off wavelength > 1.65 µm peak responsivity: 1.5 A/W Excellent temperature stability Reduced edge effect - Applications Spectrophotometer Diode laser monitoring Non-contact temperature measurement Flame control Moisture monitoring Versions Uncooled TO-can, SMD, chip only, ceramic substrate, digital module Cooled TE1, TE2, TE3 1
Optical Characteristics, Specifications @ 25 C Part Number Diameter [µm] 5% Cut off Wavelength a [µm] Peak Wavelength a [µm] Peak Responsivity a,b [A/W] Responsivity @ 9 nm a,b [A/W] Responsivity @ 13 nm a,b [A/W] Responsivity @ 15 nm a,b [A/W] Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. IG17X25S4i 25 IG17X1S4i 1 IG17X13S4i 13 >1.65 ±.1 1.55.9 1.5.44.55.77.91.8 1. IG17X2G1i 2 IG17X3G1i 3 a Parameter tested on batch level at T =25 C. b Responsivity measured at V Bias. Electro-Optical Characteristics, Specifications @ 25 C Part Number Diameter [µm] Shunt Impedance @ V R = 1 mv b [MOhm] Dark Current @ V R = 5 V b [na] Peak D* a [cm Hz ½ /W] Peak NEP a [W/Hz ½ ] Capacitance @ V R = V a [pf] Forward Voltage [V] Min. Typ. Typ. Max. Typ. Typ. Typ. Typ. IG17X25S4i 25 15 83.4 1 5.2E+12 4.2E-15 15 IG17X1S4i 1 15 75 2 1 6.3E+12 1.4E-14 215 IG17X13S4i 13 1 4 5 5 6.E+12 1.9E-14 35.73 IG17X2G1i 2 4 25 1 4 7.3E+12 2.4E-14 7 IG17X3G1i 3 3 15 2 1 8.4E+12 3.2E-14 155 a Parameter tested on batch level b Parameter 1% tested 2
Thermoelectrically Cooled InGaAs Detectors Part Number Diameter [µm] Operating Temperature [ C] Shunt Impedance @ V R = 1 mv b [MOhm] Peak D* a [cm Hz ½ /W] Peak NEP a [W/Hz ½ ] Capacitance @ V R = V a [pf] Min. Typ. Typ. Typ. Typ. IG17X1T7 1 75 275 4.1E+13 2.1E-15 215 IG17X13T7 13 36 15 4.E+13 2.9E-15 35-2 IG17X2T7 2 18 53 3.6E+13 4.9E-15 7 IG17X3T7 3 65 295 4.1E+13 6.6E-15 155 IG17X1T9 1 5 19 1.1E+14 7.9E-16 215 IG17X13T9 13 2 1 1.1E+13 1.1E-15 35-4 IG17X2T9 2 11 4 1.E+13 1.7E-15 7 IG17X3T9 3 2 4 4.9E+13 5.5E-15 155 a Parameter tested on batch level b Parameter 1% tested Absolute Maximum Ratings Min. Max. Storage Temperature [ C] -55 +125 Operating Temperature [ C] -4 +85 Reverse Bias, cw [V] - 1 Forward Current, cw [ma] - 1 Soldering Temperature, 5 sec. [ C] - 26 ESD Damage Threshold, Human Body Model Class 1A*, [V] 25 <5 TE Cooler Voltage [V] - 3.7 TE Cooler Current [A] - 1.1 *ANSI/ ESD STN5. 1-27 3
Fig. 1: Spectral Response Fig. 2: Dark Current vs. Reverse Voltage Responsivity (A/W) 1,6 1,4 1,2 1,8,6,4,2-4C -2C 25C 65C 45 65 85 15 125 145 165 185 Wavelength (nm) Dark Current (A), T = 25 C 1,E-7 IG17X3 IG17X2 1,E-8 IG17X13 IG17X1 1,E-9 IG17X25 1,E-1 1,E-11 1 2 3 4 5 6 Reverse Voltage (V) Fig. 3: Shunt vs. Temperature Fig. 4: Detectivity vs. Shunt x Area 1,E+5, Vr = 1mV 1, T = 25 C Shunt (MΩ) 1,E+4 1,E+3 1,E+2 1,E+1 1,E+ IG17X3 IG17X1 IG17X13 IG17X2 Detectivity D* (x1 12 cmhz 1/2 /W) 9 8 7 6 5 IG17X25 IG17X1 IG17X2 IG17X3 1,E-1-4 -2 2 4 6 8 1 Temperature ( C) 4 2 3 4 5 6 7 8 9 1 11 12 Ro Area (x1 5 cm² Ω) Fig. 5: Capacitance vs. Reverse Voltage Fig. 6: Responsivity Temperature Coefficient I 1,E+4 1,8,6 Capacitance (pf) 1,E+3 1,E+2 IG17X3 IG17X2 IG17X13 IG17X1 % Change / C,4,2 -,2 -,4 25 C to 65 C -4 C to 25 C -,6 -,8 1,E+1 1 2 3 4 5 6 Reverse Voltage (V) -1 4 6 8 1 12 14 16 Wavelength (nm) 4
Fig. 7: Responsivity Temperature Coefficient II Fig. 8: Sample Pulse Response % Change / C 4 3 25 C to 65 C 2 1-4 C to 25 C -1-2 -3-4 16 1625 165 1675 17 1725 175 Wavelength (nm) Normalized Response (a.u.) 1,2, λ Test =131nm, Frequency = 1kHz RL = 5Ω, Bias = V 1,8,6,4 IG17X3,2 IG17X25 2 4 6 8 1 Time (µs) Fig. 9: TEC Voltage vs. Temperature Fig. 1: TEC Current vs. Temperature 3 25 Dual Stage TEC T9, Ambient T = 25 C 1 Single Stage TEC T7, Ambient T = 25 C TEC Supplied Voltage (mv) 2 15 1 5-5 Single Stage TEC T7 TEC Supplied Current (ma) 5 Dual Stage TEC T9-1 -5-4 -3-2 -1 1 2 3 4 5 6 7 Chip Temperature ( C) -5-5 -4-3 -2-1 1 2 3 4 5 6 7 Chip Temperature ( C) Fig. 11: TEC Power vs. Temperature Fig. 12: T9 Thermistor Temperature Characteristics TEC Supplied Power (mw) 25 2 15 1 5 Dual Stage TEC T9 Single Stage TEC T7, Ambient T = 25 C Thermistor Value (kω) 92,36 1,E+2 67,62 5,2 37,76 28,75 22,14 17,24 13,56 1,76 8,62 1,E+1 6,96 5,67 4,65 3,84 3,2 2,68 2,25 1,91 1,63 1,39 1,2 1,4,9 1,E+,78,69,6-5 -5-4 -3-2 -1 1 2 3 4 5 6 7 Chip Temperature ( C) 1,E-1-6 -5-4 -3-2 -1 1 2 3 4 5 6 Chip Temperature ( C) 5
Fig. 13: T7 Thermistor Temperature Characteristics Fig. 14: Linearity 1,E+1 11, Wavelength = 131nm Thermistor Value (kω) 1,E+ 4,39 3,58 2,93 2,42 2,1 1,68 1,42 1,2 1,2,87,75,65,56,49,43,38 Relative Sensitivity (%) 1 99 98 97 96 95 94 93 IG17X3 1,E-1-1 1 2 3 4 5 6 Chip Temperature ( C) 92 5 1 15 2 25 Incident Light Level (mw) Nomenclature I G 1 7 X 2 5 S 4 i Type Standard InGaAs PIN Photodiode Standard window: Borosilicate glass Diameter 25 = 25 µm 1 = 1 mm 13 = 1.3 mm 2 = 2 mm 3 = 3 mm Package Style S4i - TO-46, isolated S4ix - TO-46, no window G1i - TO-5, isolated G1ix - TO-5, no window T7 - TO-37, single stage TEC T9 - TO-66, dual stage TEC C - Chip M9-8 pad surface mount device Y3-2 pad ceramic substrate Custom option: AR/AR, 1275-25 nm, R (avg) < 1% 6
Package Drawings S4i G1i 7
T7 T9 8
M9 Y3 9
Chip D- MAJOR-A: Digital Module, RS-232, Digital and Analog Output Pin# Signal Name Electrical Data Description 1 TempOut 25 mv Analog temp output 2 SensorOut 33 mv Analog sensor output 3 +5 V 5 V ±1% Power supply input 4 TxD RS-232 levels Serial data output 5 BSLprg RS-232 levels BSL programming signal 6 RxD RS-232 levels Serial data input 7 Reset RS-232 levels Reset input signal, low active 8 GND V Ground signal Please get in contact for more details of the MAJOR. 1
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