Description The IG22-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 2.2 µm. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range. Features 5% cut-off wavelength: > 2.15 µm Typical peak responsivity: 1.4 A/W Excellent temperature stability Reduced edge effect - Applications Spectrophotometer Diode laser monitoring Non-contact temperature measurement Flame control Moisture monitoring Versions Uncooled TO-can, SMD, chip only, ceramic substrate, digital module Cooled TE1, TE2, TE3 1
Optical Characteristics, Specifications @ 25 C Part Number Diameter [µm] 5% Cut off Wavelength a [µm] Peak Wavelength a [µm] Peak Responsivity a,b [A/W] Responsivity @ 9 nm a,b [A/W] Responsivity @ 13 nm a,b [A/W] Responsivity @ 15 nm a,b [A/W] Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. IG22X25S4i 25 IG22X1S4i 1 IG22X2G1i 2 > 2.15 1.95 ±.1 1.2 1.4.33.41.74.92.87 1.9 IG22X3G1i 3 a Parameter tested on batch level at T = 25 C b Responsivity measured at V Bias. Electro-Optical Characteristics, Specifications @ 25 C Part Number Diameter [µm] Shunt Impedance @ V R = 1 mv b [kohm] Dark Current @ V R =.25 V b [µa] Peak D* a [cm Hz ½ /W] Peak NEP a [W/Hz ½ ] Capacitance @ V R = V a [pf] Forward Voltage [V] Min. Typ. Typ. Max. Typ. Typ. Typ. Typ. IG22X25S4i 25 5 132.8 1 2.9E+11 7.8E-14 4 IG22X1S4i 1 5 15.5 1 3.8E+11 2.3E-13 65 IG22X2G1i 2 1 2 1 4 2.8E+11 6.3E-13 1745.56 IG22X3G1i 3 3 6 6 1 2.2E+11 1.2E-12 52 a Parameter tested on batch level b Parameter 1% tested 2
Thermoelectrically Cooled InGaAs Detectors Part Number Diameter [µm] Operating Temperature [ C] Shunt Impedance @ V R = 1 mv b [kohm] Peak D* a [cm Hz ½ /W] Peak NEP a [W/Hz ½ ] Capacitance @ V R = V a [pf] Min. Typ. Typ. Typ. Typ. IG22X25T7 25 11 235 1.2E+12 1.8E-14 4 IG22X1T7 1 6 12 1.E+12 8.1E-14 65-2 IG22X2T7 2 12 24 9.8E+11 1.8E-13 1745 IG22X3T7 3 62 19 1.3E+12 2.E-13 52 IG22X25T9 25 48 9 2.7E+12 8.3E-15 4 IG22X1T9 1 16 32 2.E+12 4.4E-14 65-4 IG22X2T9 2 4 8 2.E+12 8.8E-14 1745 IG22X3T9 3 26 61 2.6E+12 1.E-13 52 Absolute Maximum Ratings Min. Max. Storage Temperature [ C] -55 +125 Operating Temperature [ C] -4 +85 Reverse Bias, cw [V] 1 Forward Current, cw [ma] 1 Soldering temperature, 5 sec. [ C] 26 ESD Damage Threshold, Human Body Model Class * [V] <25 TE Cooler allowable voltage [V] 3.7 TE Cooler allowable current [A] 1.1 *ANSI/ ESD STM5. 1-27 3
Fig. 1: Spectral Response Fig. 2: Dark Current vs. Reverse Voltage 2 Typical 1,E-4 Typical, T = 25 C Responsivity (A/W) 1,8 1,6 1,4 1,2 1,8,6 Dark Current (A) 1,E-5 1,E-6 1,E-7 IG22X3 IG22X2 IG22X1 IG22X25,4,2-4C -2C 25C 65C 45 7 95 12 145 17 195 22 245 Wavelength (nm) 1,E-8 1,E-9,5,1,15,2,25,3 Reverse Voltage (V) Fig. 3: Shunt Resistance vs. Temperature Fig. 4: Detectivity vs. Shunt x Area 1,E+6 Typical, Vr = 1mV 6 Typical, T = 25 C Shunt (kω) 1,E+5 1,E+4 1,E+3 1,E+2 IG22X25 1,E+1 IG22X1 1,E+ IG22X2 IG22X3 1,E-1-4 -2 2 4 6 8 1 Temperature ( C) Detectivity D* x 1 1 (cmhz 1/2 / W) 5,5 5 4,5 IG22X3 IG22X2 4 IG22X1 3,5 IG22X25 3 2,5 2 5 6 7 8 9 1 11 12 13 14 15 Ro Area (cm²ω) Fig. 5: Capacitance vs. Reverse Voltage Fig. 6: Responsivity Temperature Coefficient 1,E+4 Typical,5 Typical Capacitance (pf) 1,E+3 1,E+2 1,E+1 IG22X3 IG22X2 IG22X1 IG22X25 % Change / C,4,3,2,1 25 C to 65 C, -4 C to 25 C 1,E+ 1 2 3 4 5 6 Reverse Voltage (V) -,1 4 6 8 1 12 14 16 18 2 22 24 Wavelength (nm) 4
Fig. 7: Sample Pulse Response Fig. 8: TEC Voltage vs. Temperature 1,2 Typical, λ Test =131nm, Frequency = 1kHz RL = 5Ω, Bias = V 3 Dual Stage TEC T9 Typical, Ambient T = 25 C 1 25 Normalized Response (a.u.),8,6,4,2 IG22X3 TEC Supplied Voltage (mv) 2 15 1 5-5 Single Stage TEC T7 IG22X25 2 4 6 8 1 Time (µs) -1-5 -4-3 -2-1 1 2 3 4 5 6 7 Chip Temperature ( C) Fig. 9: TEC Current vs. Temperature Fig. 1: TEC Power vs. Temperature Typical, Ambient T = 25 C 25 Typical, Ambient T = 25 C TEC Supplied Current (ma) 1 5 Dual Stage TEC T9 Single Stage TEC T7 TEC Supplied Power (mw) 2 15 1 5 Dual Stage TEC T9 Single Stage TEC T7-5 -5-4 -3-2 -1 1 2 3 4 5 6 7 Chip Temperature ( C) -5-5 -4-3 -2-1 1 2 3 4 5 6 7 Chip Temperature ( C) Fig. 11: T9 Thermistor Temperature Characteristics Fig. 12: T7 Thermistor Temperature Characteristics Thermistor Value (kω) 92,36 Typical 1,E+2 67,62 5,2 37,76 28,75 22,14 17,24 13,56 1,76 8,62 1,E+1 6,96 5,67 4,65 3,84 3,2 2,68 2,25 1,91 1,63 1,39 1,2 1,4,9 1,E+,78,69,6 Thermistor Value (kω) 1,E+1 4,39 1,E+ 3,58 2,93 2,42 2,1 1,68 1,42 1,2 1,2,87,75,65,56,49 Typical,43,38 1,E-1-6 -5-4 -3-2 -1 1 2 3 4 5 6 Chip Temperature ( C) 1,E-1-1 1 2 3 4 5 6 Chip Temperature ( C) 5
Fig. 13: Linearity 12 Typical, Wavelength = 131 nm Relative Sensitivity (%) 1 8 6 4 2 IG22X3 2 4 6 8 1 12 Incident Light Level (mw) Nomenclature I G 2 2 X 2 5 S 4 i Type Extendend InGaAs PIN Photodiode Standard window: Borosilicate glass Diameter 25 = 25 µm 1 = 1 mm 2 = 2 mm 3 = 3 mm Package Style S4i - TO-46, isolated S4ix - TO-46, no window G1i - TO-5, isolated G1ix - TO-5, no window T7 - TO-37 Single Stage TEC T9 - TO-66 Dual Stage TEC C - Chip M9-8 pad surface mount device Y3-2 pad ceramic substrate Custom option: AR/AR, 1275-25 nm, R (avg) < 1% 6
Package Drawings S4i G1i 7
T7 T9 8
M9 Y3 9
Chip D- MAJOR-A: Digital Module, RS-232, Digital and Analog Output Pin# Signal Name Electrical Data Description 1 TempOut 25 mv Analog temp output 2 SensorOut 33 mv Analog sensor output 3 +5 V 5 V ±1% Power supply input 4 TxD RS-232 levels Serial data output 5 BSLprg RS-232 levels BSL programming signal 6 RxD RS-232 levels Serial data input 7 Reset RS-232 levels Reset input signal, low active 8 GND V Ground signal Please get in contact for more details of the MAJOR. 1
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