FDP036NA N-Channel PowerTrench MOSFET V, 76A, 3.6mW Features R DS(on) = 3.2mW ( Typ.)@ V GS = V, I D = 75A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability RoHS Compliant DRAIN (FLANGE) SOURCE DRAIN GATE Description July 20 This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC Convertors / Synchronous Rectification G D TO-220AB FDP Series S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage V V GSS Gate to Source Voltage ±20 V I D Drain Current *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 20A. Thermal Characteristics - Continuous (T C = 25 o C, Silicon Limited) 76* - Continuous (T C = o C, Silicon Limited) 25* - Continuous (T C = 25 o C, Package Limited) 20 I DM Drain Current - Pulsed (Note ) 704 A E AS Single Pulsed Avalanche Energy (Note 2) 558 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P D Power Dissipation (T C = 25 o C) 227 W - Derate above 25 o C.5 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +75 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C Symbol Parameter Ratings Units R qjc Thermal Resistance, Junction to Case 0.66 R qja Thermal Resistance, Junction to Ambient 62.5 A o C/W 20 Fairchild Semiconductor Corporation
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP036NA FDP036NA TO-220 - - 50 Electrical Characteristics T C = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250mA, V GS = 0V, T C = 25 o C - - V DBV DSS DT J I DSS On Characteristics Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Dynamic Characteristics I D = 250mA, Referenced to 25 o C - 0.07 - V/ o C V DS = 80V, V GS = 0V - - V DS = 80V, T C = 50 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20V, V DS = 0V - - ± na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250mA 2.0 3.0 4.0 V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 75A - 3.2 3.6 mw g FS Forward Transconductance V DS = V, I D = 75A (Note 4) - 67 - S C iss Input Capacitance - 5485 7295 pf V DS = 25V, V GS = 0V C oss Output Capacitance - 2430 3230 pf f = MHz C rss Reverse Transfer Capacitance - 2 35 pf Q g(tot) Total Gate Charge at V - 89 6 nc Q gs Gate to Source Gate Charge V DS = 80V, I D = 75A - 24 - nc Q gs2 Gate Charge Threshold to Plateau V GS = V - 8 - nc Q gd Gate to Drain Miller Charge - 25 - nc ma Switching Characteristics t d(on) Turn-On Delay Time - 22 54 ns V DD = 50V, I D = 75A t r Turn-On Rise Time - 54 8 ns V GS = V, R GEN = 4.7W t d(off) Turn-Off Delay Time - 37 84 ns t f Turn-Off Fall Time - 32 ns ESR Equivalent Series Resistance (G-S) -.2 - W Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 76 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 704 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 75A - -.25 V t rr Reverse Recovery Time V GS = 0V, I SD = 75A - 72 - ns Q rr Reverse Recovery Charge di F /dt = A/ms - 29 - nc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Starting T J = 25 C, L = 0.3mH, I AS = 60A 3. I SD 75A, di/dt 200A/ms, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300ms, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics Figure. On-Region Characteristics ID, Drain Current[A] RDS(ON) [W], Drain-Source On-Resistance 600 V GS = 5.0 V.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V. 250ms Pulse Test 2. T C = 25 o C 2 0.02 0. V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = V 2. 250ms Pulse Test 2 3 4 5 6 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.0040 0.0035 0.0030 V GS = V V GS = 20V *Note: T C = 25 o C 0.0025 0 60 20 80 240 300 360 I D, Drain Current [A] ID, Drain Current[A] IS, Reverse Drain Current [A] 300 500 50 o C 50 o C 25 o C -55 o C 25 o C. V GS = 0V 2. 250ms Pulse Test 0.2 0.4 0.6 0.8.0.2 V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics 00 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss C rss *Note:. V GS = 0V 2. f = MHz 0. 30 V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics 8 6 4 2 V DS = 20V V DS = 50V V DS = 80V *Note: I D = 75A 0 0 30 60 90 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 9. Maximum Safe Operating Area ID, Drain Current [A]..05.00 0.95. V GS = 0V 2. I D = ma 0.90 - -50 0 50 50 200 T J, Junction Temperature [ o C] 3000 0 Operation in This Area is Limited by R DS(on). T C = 25 o C ms ms ms DC ms 2. T J = 75 o C 3. Single Pulse 0. 0. 300 V DS, Drain-Source Voltage [V] RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature 2..8.5.2 0.9. V GS = V 2. I D = 75A 0.6 - -50 0 50 50 200 T J, Junction Temperature [ o C] Figure. Maximum Drain Current vs. Case Temperature 200 50 50 Limited by package 0 25 50 75 25 50 75 T C, Case Temperature [ o C] Figure. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT (A) 200 If R = 0 STARTING T J = 50 o C tav = (L)(IAS)/(.3*RATED BVDSS-VDD) If R = 0 tav = (L/R)In[(IAS*R)/(.3*RATED BVDSS-VDD)+] STARTING T J = 25 o C 0.0 0. 0 t AV, TIME IN AVALANCHE (ms) 4
Typical Performance Characteristics Thermal Response [Z qjc ] 3 0. 0.5 0.2 0. 0.05 0.02 Figure 2. Transient Thermal Response Curve 0.0 0.0. Z qjc (t) = 0.66 o C/W Max. Single pulse 2. Duty Factor, D = t /t 2 3. T JM - T C = P DM * Z qjc (t) 0.00-5 -4-3 -2 - Rectangular Pulse Duration [sec] P DM t t 2 FDP036N0A N-Channel PowerTrench MOSFET 5
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V GS I SD V DS _ L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 7
Mechanical Dimensions TO-220AB 8
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