FDP047N N-Channel PowerTrench MOSFET 0V, 164A, 4.7mΩ Description R DS(on) = 3.9mΩ ( Typ.) @ V GS = V, I D = 75A Fast switching speed Low gate charge High performance trench technology for extremely low R DS(on) High power and current handing capability RoHS compliant General Description August 20 This N-Channel MOSFET is producedusing Fairchild Semiconductor s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC converters / Synchronous Rectification D G G D S TO-220 S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Symbol Parameter Ratings Units V DSS Drain to Source Voltage 0 V V GSS Gate to Source Voltage ±20 V I D - Continuous (T C = 0 o C, Silicon Limited) 116* A Drain Current - Continuous (T C = 25 o C, Silicon Limited) 164* A - Continuous (T C = 25 o C, Package Limited) 120 A I DM Drain Current - Pulsed (Note 1) 656* A E AS Single Pulsed Avalanche Energy (Note 2) 1153 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 o C) 375 W - Derate above 25 o C 2.5 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +175 o C. T L Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds 300 o C.*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case 0.4 R θcs Thermal Resistance, Case to Sink Typ. 0.5 R θja Thermal Resistance, Junction to Ambient 62.5 o C/W 20 Fairchild Semiconductor Corporation 1
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP047N FDP047N TO-220 - - 50 Electrical Characteristics T C = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250μA, V GS = 0V, T J = 25 o C 0 - - V ΔBV DSS ΔT J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics Switching Characteristics I D = 250μA, Referenced to 25 o C - 0.1 - V/ o C V I DSS Zero Gate Voltage Drain Current DS = 0V, V GS = 0V - - 1 μa V DS = 0V, V GS = 0V, T C = 150 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20V, V DS = 0V - - ±0 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250μA 2.5 3.5 4.5 V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 75A - 3.9 4.7 mω g FS Forward Transconductance V DS = V, I D = 75A (Note 4) - 170 - S C iss Input Capacitance - 11500 15265 pf V DS = 25V, V GS = 0V C oss Output Capacitance - 1120 1500 pf f = 1MHz C rss Reverse Transfer Capacitance - 455 680 pf t d(on) Turn-On Delay Time - 174 358 ns t r Turn-On Rise Time V DD = 50V, I D = 75A - 386 782 ns t d(off) Turn-Off Delay Time V GS = V, R GEN = 25Ω - 344 698 ns t f Turn-Off Fall Time (Note 4, 5) - 244 499 ns Q g(tot) Total Gate Charge at V V DS = 80V, I D = 75A - 160 2 nc Q gs Gate to Source Gate Charge V GS = V - 56 - nc Q gd Gate to Drain Miller Charge (Note 4, 5) - 36 - nc Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 164 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 656 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 75A - - 1.25 V t rr Reverse Recovery Time V GS = 0V, I SD = 75A - 88 - ns Q rr Reverse Recovery Charge di F /dt = 0A/μs (Note 4) - 245 - nc Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.41mH, I AS = 75A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 75A, di/dt 200A/μs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300μs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics ID,Drain Current[A] RDS(ON) [mω], Drain-Source On-Resistance Figure 1. On-Region Characteristics 300 0 V 8V 7V 2. T C = 25 o C 6 0.1 1 V DS,Drain-Source Voltage[V] 6.5 V 6.0 V 5.5 V V GS = 5V 1. 250μs Pulse Test 5 Figure 2. Transfer Characteristics 1. V DS = 20V 2. 250μs Pulse Test 1 2 4 6 8 V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 8 6 4 2 VGS = V V GS = 20V *Note: T J = 25 o C 0 0 0 200 300 400 I D, Drain Current [A] ID,Drain Current[A] IS, Reverse Drain Current [A] 400 0 300 0 175 o C 175 o C -55 o C 25 o C 25 o C 1. V GS = 0V 2 2. 250μs Pulse Test 0.0 0.5 1.0 1.4 V SD, Body Diode Forward Voltage [V] Capacitances [pf] 16000 14000 12000 000 Figure 5. Capacitance Characteristics 8000 6000 4000 2000 C iss C oss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0 0.1 1 V DS, Drain-Source Voltage [V] *Note: 1. V GS = 0V 2. f = 1MHz 30 VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics 8 6 4 2 V DS = 20V V DS = 50V V DS = 80V *Note: I D = 75A 0 0 30 60 90 120 150 180 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage ID, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 1. V GS = 0V 2. I D = 250μA 0.8-0 -50 0 50 0 150 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 00 0 1 0.1 Operation in This Area is Limited by R DS(on) 0μs 1ms ms DC 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse μs RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 1. V GS = V 2. I D = 75A 0.0-0 -50 0 50 0 150 200 T J, Junction Temperature [ o C] 200 150 0 Figure. Maximum Drain Current vs. Case Temperature 50 Limited by package 0.01 0.1 1 0 V DS, Drain-Source Voltage [V] 200 0 25 50 75 0 125 T C, Case Temperature [ o C] 150 175 Figure 11. Transient Thermal Response Curve 1 Thermal Response [Z θjc ] 0.1 0.01 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse 1. Z θjc (t) = 0.4 o C/W Max. 2. Duty Factor, D= t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) 1E-3-5 -4-3 -2-1 0 1 Rectangular Pulse Duration [sec] P DM t 1 t 2 4
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD V DS _ L Driver R G Same Type as DUT V GS dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6
Mechanical Dimensions TO-220 7
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