FDB088N08 N-Channel PowerTrench MOSFET 75V, 85A, 8.8mΩ Features R DS(on) = 7.3 mω ( Typ.)@ V GS = V, I D = 75A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability 0% Internal Rg Screening for Easy Paralleling Operation RoHS Compliant Description February 0 This N-Channel MOSFET is produced using Fairchild Semiconductor s adcanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC Convertors / Synchronous Rectification D D Absolute Maximum Ratings T C = 5 o C unless otherwise noted* Symbol Parameter FDB088N08 Units V DSS Drain to Source Voltage 75 V V GSS Gate to Source Voltage ±0 V I D - Continuous (T C = 0 o C, Silicon Limited) 60 A Drain Current - Continuous (T C = 5 o C, Silicon Limited) 85* A - Continuous (T C = 5 o C, Package Limited) 0 A I DM Drain Current - Pulsed (Note ) 340 A E AS Single Pulsed Avalanche Energy (Note ) 309 mj dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns P D Power Dissipation (T C = 5 o C) 60 W - Derate above 5 o C.06 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +75 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 0A. Thermal Characteristics G S D -PAK FDB Series Symbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case 0.94 o C/W R θja Thermal Resistance, Junction to Ambient 6.5 G S 0 Fairchild Semiconductor Corporation
Package Marking and Ordering Information T C = 5 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FDB088N08 FDB088N08 D-PAK 330mm 4mm 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 50μA, V GS = 0V, T C = 5 o C 75 - - V ΔBV DSS ΔT J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics I D = 50μA, Referenced to 5 o C - 0.07 - V/ o C V DS = 75V, V GS = 0V - - I DSS Zero Gate Voltage Drain Current μa V DS = 75V, T C = 50 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±0V, V DS = 0V - - ±0 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 50μA.0-4.0 V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 75A - 7.3 8.8 mω g FS Forward Transconductance V DS = V, I D = 37.5A (Note 4) - 300 - S C iss Input Capacitance - 4960 6595 pf V DS = 5V, V GS = 0V C oss Output Capacitance - 355 470 pf f = MHz C rss Reverse Transfer Capacitance - 00 300 pf Q g(tot) Total Gate Charge at V - 9 8 nc Q gs Gate to Source Gate Charge V DS = 60V, I D = 75A - - nc Q gd Gate to Drain Miller Charge V GS = V (Note 4, 5) - 8 - nc R G Gate Resistance f = MHz - - 4 Ω Switching Characteristics t d(on) Turn-On Delay Time - 45 0 ns t r Turn-On Rise Time V DD = 37.5V, I D = 75A - 58 36 ns t d(off) Turn-Off Delay Time R GEN = 5Ω, V GS = V - 44 498 ns t f Turn-Off Fall Time (Note 4, 5) - 4 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 85 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 340 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 75A - -.5 V t rr Reverse Recovery Time V GS = 0V, I SD = 75A - 4. - ns Q rr Reverse Recovery Charge di F /dt = 0A/μs (Note 4) - 80.7 - nc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature. L = 0.mH, I AS = 75A, V DD = 50V, R G = 5Ω, Starting T J = 5 C 3. I SD 75A, di/dt 00A/μs, V DD BV DSS, Starting T J = 5 C 4. Pulse Test: Pulse width 300μs, Duty Cycle % 5. Essentially Independent of Operating Temperature Typical Characteristics
Typical Performance Characteristics ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 500 0 0. V GS = 5.0 V.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V. 50μs Pulse Test. T C = 5 o C 0. V DS,Drain-Source Voltage[V] Figure. Transfer Characteristics 3 4 5 6 7 V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.00 0.05 0.0 V GS = V V GS = 0V *Note: T C = 5 o C 0.005 0 0 00 300 I D, Drain Current [A] ID,Drain Current[A] IS, Reverse Drain Current [A] 500 0 500 0 75 o C 75 o C 5 o C -55 o C. V DS = 0V. 50μs Pulse Test 5 o C. V GS = 0V. 50μs Pulse Test 3 0.0 0.4 0.8..6 V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics 8000 6000 4000 000 C iss C oss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd. V GS = 0V. f = MHz 0 0. 30 V DS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 8 6 4 V DS = 5V V DS = 37.5V V DS = 60V *Note: I D = 75A 0 0 0 40 60 80 0 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage ID, Drain Current [A]...0 0.9 0.8-0 -50 0 50 0 50 00 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 00 0 Operation in This Area is Limited by R DS(on). T C = 5 o C. T J = 75 o C 3. Single Pulse. V GS = 0V. I D = ma μs 0μs ms ms DC RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature ID, Drain Current [A] 3.0.5.0.5.0 0.5. V GS = V. I D = 75A 0.0-0 -50 0 50 0 50 00 T J, Junction Temperature [ o C] Figure. Maximum Drain Current vs. Case Temperature 0 80 60 40 0 0. 0 00 V DS, Drain-Source Voltage [V] 0 5 50 75 0 5 50 75 T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve Thermal Response [Z θjc ] 0. 0.0 0.5 0. 0. 0.05 0.0 0.0 Single pulse t. Z θjc (t) = 0.94 o C/W Max.. Duty Factor, D= t /t 3. T JM - T C = P DM * Z θjc (t) 0.05-5 -4-3 - - 0 Rectangular Pulse Duration [sec] P DM t 4
Mechanical Dimensions D-PAK Dimensions in Millimeters 5
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