FDP032N08 N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ Features R DS(on) = 2.5mΩ ( Typ.)@ V GS = 0V, I D = 75A Fast switching speed Low gate charge High performance trench technology for extremely low R DS(on) High power and current handling capability RoHS compliant Description July 2008 tm This N-Channel MOSFET is produced using Fairchild Semiconductor s adcanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D G D S TO-220 G MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Symbol Parameter FDP032N08 Units V DSS Drain to Source Voltage 75 V V GSS Gate to Source Voltage ±20 V I D - Continuous (T C = o C, Silicon Limited) 65* A Drain Current - Continuous (T C = 25 o C, Silicon Limited) 235* A - Continuous (T C = 25 o C, Package Limited) 20 A I DM Drain Current - Pulsed (Note ) 940 A E AS Single Pulsed Avalanche Energy (Note 2) 995 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P D Power Dissipation (T C = 25 o C) 375 W - Derate above 25 o C 2.5 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +75 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 20A. Thermal Characteristics Symbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case 0.4 R θcs Thermal Resistance, Case to Sink Typ. 0.5 R θja Thermal Resistance, Junction to Ambient 62.5 S o C/W 2008 Fairchild Semiconductor Corporation
Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FDP032N08 FDP032N08 TO-220 - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T C = 25 o C 75 - - V BV DSS T J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics I D = 250µA, Referenced to 25 o C - 0.05 - V/ o C V DS = 75V, V GS = 0V - - I DSS Zero Gate Voltage Drain Current µa V DS = 75V, T C = 50 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20V, V DS = 0V - - ± na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250µA 2.5 3.5 4.5 V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 75A - 2.5 3.2 mω g FS Forward Transconductance V DS = 0V, I D = 75A (Note 4) - 80 - S C iss Input Capacitance - 400 560 pf V DS = 25V, V GS = 0V C oss Output Capacitance - 360 80 pf f = MHz C rss Reverse Transfer Capacitance - 595 800 pf Q g(tot) Total Gate Charge at 0V - 69 220 nc Q gs Gate to Source Gate Charge V DS = 60V, I D = 75A - 60 - nc Q gd Gate to Drain Miller Charge V GS = 0V (Note 4, 5) - 47 - nc Switching Characteristics t d(on) Turn-On Delay Time - 230 470 ns t r Turn-On Rise Time V DD = 37.5V, I D = 75A - 9 392 ns t d(off) Turn-Off Delay Time R GEN = 25Ω, V GS = 0V - 335 680 ns t f Turn-Off Fall Time (Note 4, 5) - 2 252 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 235 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 940 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 75A - -.3 V t rr Reverse Recovery Time V GS = 0V, I SD = 75A - 53 - ns Q rr Reverse Recovery Charge di F /dt = A/µs (Note 4) - 77 - nc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.7mH, I AS = 75A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 75A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 3000 0 0 V GS = 5.0 V 0.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V. 250µs Pulse Test 2. T C = 25 o C 0. 0.0 0. V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = 20V 2. 250µs Pulse Test 2 4 6 8 V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.0030 0.0025 V GS = 0V V GS = 20V *Note: T C = 25 o C 0.0020 0 200 300 400 I D, Drain Current [A] ID,Drain Current[A] IS, Reverse Drain Current [A] 500 0 400 0 75 o C 75 o C -55 o C 25 o C 25 o C. V GS = 0V 2. 250µs Pulse Test 0.0 0.5.0.5 V SD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitances [pf] 000 00 0 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss C rss *Note:. V GS = 0V 2. f = MHz VGS, Gate-Source Voltage [V] 0 8 6 4 2 V DS = 5V V DS = 37.5V V DS = 60V 0. 0 V DS, Drain-Source Voltage [V] 80 *Note: I D = 75A 0 0 50 50 200 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage ID, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature.2..0 0.9. V GS = 0V 2. I D = 0mA 0.8 - -50 0 50 50 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 0 0 Operation in This Area is Limited by R DS(on) ms 0ms DC µs 0µs. T C = 25 o C 2. T J = 75 o C 3. Single Pulse 0. 0 V DS, Drain-Source Voltage [V] RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0.5.0 0.5. V GS = 0V 2. I D = 75A 0.0 - -50 0 50 50 200 T J, Junction Temperature [ o C] 250 200 50 Figure 0. Maximum Drain Current vs. Case Temperature 50 Limited by package 0 25 50 75 25 T C, Case Temperature [ o C] 50 75 Figure. Transient Thermal Response Curve 0.5 Thermal Response [Z θjc ] 0. 0.0 0.5 0.2 0. 0.05 0.02 0.0 Single pulse. Z θjc (t) = 0.4 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.00 0-5 0-4 0-3 0-2 0-0 0 0 Rectangular Pulse Duration [sec] P DM t t 2 4
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V GS I SD V DS _ L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6
Mechanical Dimensions (.70) 3.08 ±0.20 9.20 ±0.20.30 ±0.0 (.46) (.00).27 ±0.0 9.90 ±0.20 (8.70) ø3.60 ±0.0 (45 ) (3.00) (3.70).52 ±0.0 TO-220 5.90 ±0.20 2.80 ±0.0 0.08 ±0.30 8.95MAX. 4.50 ±0.20.30 +0.0 0.05 2.54TYP [2.54 ±0.20] 0.80 ±0.0 2.54TYP [2.54 ±0.20] 0.50 +0.0 0.05 2.40 ±0.20 0.00 ±0.20 7
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