Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) () G D2 S D Top View of SOT-23-6 (6)D (3) G2 G2 S2 G (4)D2 Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (5)S N-Channel MOSFET (2)S2 P-Channel MOSFET Ordering and Marking Information APM270A APM270A C : Assembly Material Handling Code Temperature Range Package Code A7XX Package Code C : SOT-23-6 Operating Junction Temperature Range C : -55 to 50 o C Handling Code TR : Tape & Reel (3000ea/reel) Assembly Material G : Halogen and Lead Free Device XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 00% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Absolute Maximum Ratings (T A = 25 C unless otherwise noted) Symbol Parameter Rating N-Channel P-Channel Unit V DSS Drain-Source Voltage 20-20 S Gate-Source Voltage ±2 ±2 V I D * Continuous Drain Current 3-2 =±4.5V I DM * 300µs Pulsed Drain Current 2-8 A I S * Diode Continuous Forward Current - A T J Maximum Junction Temperature 50 T STG Storage Temperature Range -55 to 50 C P D * Power Dissipation T A =25 C 0.83 T A =00 C 0.3 W R θja * Thermal Resistance-Junction to Ambient 50 C/W Note : *Surface Mounted on in 2 pad area, t 0sec. Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown =0V, =250µA N-Ch 20 - - V Voltage =0V, =-250µA P-Ch -20 - - S Zero Gate Voltage Drain Current (th) Gate Threshold Voltage I GSS Gate Leakage Current =±0V, V DS =0V a Drain-Source On-State Resistance V DS =6V, =0V - - N-Ch T J =85 C - - 30 V DS =-6V, =0V - - - P-Ch T J =85 C - - -30 V DS =, =250µA N-Ch 0.5 0.7 V DS =, =-250µA P-Ch -0.5-0.7 - N-Ch - - ±0 P-Ch - - ±0 =4.5V, =3A N-Ch - 50 65 =-4.5V, =-2A P-Ch - 90 20 =2.5V, =.7A N-Ch - 65 90 =-2.5V, =-A P-Ch - 30 80 µa V µa mω 2
Electrical Characteristics (Cont.) (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Characteristics V SD a t rr Q rr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge I SD =0.5A, =0V N-Ch - 0.7.3 I SD =-0.5A, =0V P-Ch - -0.7 -.3 N-Channel N-Ch - - I SD =3A, di SD /dt=00a/µs P-Ch - 2 - P-Channel I SD =-2A, N-Ch - 4 - di SD /dt=00a/µs P-Ch - 4 - Dynamic Characteristics b N-Ch - 300 - V ns nc C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel =0V, V DS =0V, Frequency=MHz P-Ch - 375 - N-Ch - 70 - P-Channel P-Ch - 70 - =0V, V DS =-0V, N-Ch - 50 - Frequency=MHz P-Ch - 50 - pf t d(on) T r t d(off) T f Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time N-Channel V DD =0V, R L =0Ω, =A, V GEN =4.5V, R G =6Ω P-Channel V DD =-0V, R L =0Ω, =-A, V GEN =-4.5V, R G =6Ω N-Ch - 4 8 P-Ch - 6 2 N-Ch - 4 26 P-Ch - 4 26 N-Ch - 2 39 P-Ch - 27 50 N-Ch - 5 0 P-Ch - 5 0 ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel V DS =0V, =4.5V, =3A P-Channel V DS =-0V, =-4.5V, =-2A Gate Charge Characteristics b N-Ch - 4. 6 P-Ch - 4.2 6 N-Ch - 0.4 - P-Ch - 0.6 - N-Ch -.7 - P-Ch -.3 - nc Note a : Pulse test ; pulse width 300µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. 3
Typical Operating Characteristics N-Channel Power Dissipation Drain Current 3.5 0.8 3.0 P tot - Power (W) 0.6 0.4 I D 2.5 2.0.5 0.5 0 20 40 60 80 00 20 40 60 0 20 40 60 80 00 20 40 60 Safe Operation Area Thermal Transient Impedance 50 2 I D 0 0. Rds(on) Limit 300µs ms 0ms 00ms s DC T A =25 o C 0. 0 00 Normalized Transient Thermal Resistance 0. 2 5 0. Duty = 0.5 Single Pulse Mounted on in 2 pad R θja : 50 o C/W E-4 E-3 0. 0 00 V DS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance I D 2 0 9 8 7 6 5 4 3 2 = 3,4,5,6,7,8,9,0V 2V.5V - On - Resistance (mω) 90 84 78 72 66 60 54 48 42 36 =2.5V =4.5V 0 0.5.5 2.0 2.5 3.0 30 0 2 4 6 8 0 2 V DS - Drain - Source Voltage (V) I D Gate-Source On Resistance Gate Threshold Voltage - On - Resistance (mω) 00 90 80 70 60 50 =3A Normalized Threshold Voltage.8.6.4.2 0.8 0.6 0.4 =250µA 40 30 2 3 4 5 6 7 8 9 0 - Gate - Source Voltage (V) -50-25 0 25 50 75 00 25 50 5
Typical Operating Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance 2.0.8.6.4.2 0.8 0.6 0.4 = 4.5V = 3A I S - Source Current (A) 20 0 =50 o C Tj=25oC R ON @ =25 o C: 50mΩ -50-25 0 25 50 75 00 25 50 0. 0.4 0.6 0.8.2.4.6 V SD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 500 450 400 350 300 250 200 50 00 50 Crss Coss Frequency=MHz Ciss - Gate - source Voltage (V) 5.0 4.5 4.0 3.5 3.0 2.5 2.0.5 0.5 V DS = 0V = 3A 0 0 4 8 2 6 20 V DS - Drain - Source Voltage (V) 0 2 3 4 5 Q G - Gate Charge (nc) 6
Typical Operating Characteristics (Cont.) P-Channel Power Dissipation Drain Current 2.5 0.8 2.0 P tot - Power (W) 0.6 0.4 -I D.5 0.5 0 20 40 60 80 00 20 40 60 0 20 40 60 80 00 20 40 60 Safe Operation Area Thermal Transient Impedance -I D 30 0 0. Rds(on) Limit 300µs ms 0ms 00ms s DC T A =25 o C 0. 0 00 Normalized Transient Thermal Resistance 2 0. 2 5 0. Duty = 0.5 Mounted on in 2 pad Single Pulse R θja : 50 o C/W E-4 E-3 0. 0 00 -V DS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 7
Typical Operating Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 8 7 =-2.5,-3-4,-5,-6, -7,-8,-9,-0V 200 80 -I D 6 5 4 3 2-2V -.5V - On - Resistance (mω) 60 40 20 00 80 = -2.5V = -4.5V 60 0 0.5.5 2.0 2.5 3.0 -V DS - Drain - Source Voltage (V) 40 0 2 3 4 5 6 7 8 -I D Gate-Source On Resistance Gate Threshold Voltage - On - Resistance (mω) 240 20 80 50 20 90 =-2A Normalized Threshold Voltage.8.6.4.2 0.8 0.6 0.4 = -250µA 60 30 2 3 4 5 6 7 8 9 0 - - Gate - Source Voltage (V) -50-25 0 25 50 75 00 25 50 8
Typical Operating Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 2.0.8 = -4.5V = -2A 0.6 Normalized On Resistance.4.2 0.8 0.6 0.4 -I S - Source Current (A) =50 o C =25 o C R ON @ =25 o C: 90mΩ -50-25 0 25 50 75 00 25 50 0. 0.3 0.6 0.9.2.5 -V SD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 550 500 450 400 350 300 250 200 50 00 50 Crss Coss Frequency=MHz Ciss - - Gate - source Voltage (V) 5.0 4.5 4.0 3.5 3.0 2.5 2.0.5 0.5 V DS = -0V = -2A 0 0 4 8 2 6 20 -V DS - Drain - Source Voltage (V) 0 2 3 4 5 Q G - Gate Charge (nc) 9
Avalanche Test Circuit and Waveforms N Channel DUT L tp X(SUS) RG VDD IAS tp IL W VDD EAS tav P Channel L tav DUT EAS RG VDD VDD tp IAS IL W tp X(SUS) Switching Time Test Circuit and Waveforms N Channel DUT RD 90% RG VGS VDD tp 0% VGS td(on) tr td(off) tf P Channel RG VGS DUT RD VDD VGS 0% td(on) tr td(off) tf tp 90% 0
Package Information SOT-23-6 D e SEE VIEW A A2 A 5 E E e b c A L 0 GAUGE PLANE SEATING PLANE VIEW A S Y M B O L A A A2 b c D E E e e L 0 MIN. 0 0.90 0.30 8 0.30 MILLIMETERS 0.95 BSC.90 BSC MAX. 0.50 2 0.60 SOT-23-6 -.25-5.20 2.70 3.0 2.60 3.00.40.80 MIN. 00 35 2 03 0.06 0.02 55 2 INCHES 37 BSC 75 BSC MAX. 49 02 47 20 09 2 0.8 7 24 0 8 0 8 Note :. Follow JEDEC TO-78 AB. 2. Dimension D and E do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0 mil per side. RECOMMENDED LAND PATTERN 0.63 2.4 0.8 0.95 UNIT: mm
Carrier Tape & Reel Dimensions OD0 P0 P2 P A W F E K0 B A0 OD B A T B0 SECTION A-A SECTION B-B d H A T Application A H T C d D W E F SOT-23-6 78.0±2.00 50 MIN. 8.4+2.00-0 3.0+0.50-0.5 MIN. 2 MIN. 8.0±0.30.75±0.0 3.5±5 P0 P P2 D0 D T A0 B0 K0 4.0±0.0 4.0±0.0 2.0±5.5+0.0-0 MIN. 0.6+0-0.40 3.20±0 3.0±0.50±0 (mm) 2
Taping Direction Information SOT-23-6 USER DIRECTION OF FEED AAAXX AAAXX AAAXX AAAXX AAAXX AAAXX AAAXX Classification Profile 3
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Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 00 C 50 C 60-20 seconds 50 C 200 C 60-20 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 83 C 60-50 seconds 27 C 60-50 seconds See Classification Temp in table See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm 3 350-2000 Volume mm 3 >2000 <.6 mm 260 C 260 C 260 C.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B02 5 Sec, 245 C HTRB JESD-22, A08 000 Hrs, 80% of max @ Tjmax HTGB JESD-22, A08 000 Hrs, 00% of VGS max @ Tjmax PCT JESD-22, A02 68 Hrs, 00%RH, 2atm, 2 C TCT JESD-22, A04 500 Cycles, -65 C~50 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-563588 Fax: 886-3-5642050 5