P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant to RoHS Directive /95/EC S TO-5 G Drain Connected to Tab G D S Top View Ordering Information: SUD5P4-9L-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - 4 Gate-Source Voltage V GS ± V - 5 d Continuous Drain Current (T J = 75 C) - 5 d A Pulsed Drain Current M - Avalanche Current I AS - 5 Single Avalanche Energy a L =. mh E AS 5 mj Power Dissipation 36 c P D T A = 5 C 3 b, c W Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambient b t s 5 8 R Steady State thja 4 5 C/W Junction-to-Case R thjc.8. Notes: a. Duty cycle %. b. When mounted on " square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. S-546-Rev. C, 8-Mar-
SUD5P4-9L SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, = - 5 µa - 4 V Gate Threshold Voltage V GS(th) V DS = V GS, = - 5 µa - - 3 Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na Zero Gate Voltage Drain Current SS V DS = - 3 V, V GS = V, T J = 5 C - 5 µa V DS = - 3 V, V GS = V - V DS = - 3 V, V GS = V, T J = 75 C - 5 On-State Drain Current a (on) V DS = - 5 V, V GS = - V - 5 A Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - V, = - 4 A.75.94 VDS = - V, VGS = - V, ID = - 5 A Drain-Source On-State Resistance a R DS(on) V GS = - V, = - 5 A, T J = 5 C.4 V GS = - V, = - 5 A, T J = 75 C.7 Ω V GS = - 4.5 V, = - 8 A.5.45 Forward Transconductance a g fs V DS = - 5 V, = - 4 A 73 S Dynamic b Input Capacitance C iss 48 Output Capacitance C oss VGS = V, VDS = - 5 V, f = MHz 7 pf Reverse Transfer Capacitance C rss 55 Total Gate Charge c Q g 5 Gate-Source Charge c Q gs 8.5 nc Gate-Drain Charge c Q gd 7 Turn-On Delay Time c t d(on) 5 Rise Time c t r V DD = - V, R L =.4 Ω 6 9 Turn-Off Delay Time c t d(off) - 5 A, V GEN = - V, R g = 6 Ω 45 ns Fall Time c t f 4 Source Drain-Diode Ratings and Characteristics b Continuous Current I S - 5 Pulsed Current I SM - A Forward Voltage a V SD I F = - 5 A, V GS = V -. -.5 V Reverse Recovery Time t rr I F = - 5 A, di/dt = A/µs 55 85 ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-546-Rev. C, 8-Mar-
SUD5P4-9L TYPICAL CHARACTERISTICS 5 C, unless otherwise noted V GS = V thru 5 V 4 V 8 8 - Drain Current (A) 6 4 - Drain Current (A) 6 4 3 V 5 C - 55 C V 3 4 5 Output Characteristics..5..5..5 3. 3.5 4. 4.5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics. T C = - 55 C - Transconductance (S) g fs 8 6 4 5 C 5 C - On-Resistance (Ω) R DS(on).6..8.4 V GS = 4.5 V V GS = V 4 6 8 V GS - Gate-to-Source Voltage (V) Transconductance. 4 6 8 - Drain Current (A) On-Resistance vs. Drain Current 8 C - Capacitance (pf) 7 6 5 4 3 C iss - Gate-to-Source Voltage (V) V GS 8 6 4 V DS = V = 5 A C oss C rss 5 5 5 3 35 4 Capacitance 4 6 8 Q g - Total Gate Charge (nc) Gate Charge S-546-Rev. C, 8-Mar- 3
SUD5P4-9L TYPICAL CHARACTERISTICS 5 C, unless otherwise noted.8.6 V GS = V = 5 A R DS(on) - On-Resistance (Normalized).4.. - Source Current (A) I S T J = 5 C T J = 5 C.8.6-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature THERMAL RATINGS 6..3.6.9..5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 M Limited Limited by R DS(on) * - Drain Current (A) 4 3 - Drain Current (A) (on) Limited P(t) =. P(t) =. 5 5 75 5 5 75 T C - Case Temperature ( C) Maximum Avalanche and Drain Current vs. Case Temperature Single Pulse P(t) =. P(t) =. BVDSS Limited P(t) =. *V GS > minimum V GS at which R DS(on) is specified Safe Operating Area Duty Cycle =.5 Normalized Effective Transient Thermal Impedance....5. Single Pulse. -4-3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?743. 4 S-546-Rev. C, 8-Mar-
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