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June 29 FVN igital FET, N-Channel General escription This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. Features 25 V, 2 A continuous,.5 A Peak. R S(ON) = 5 Ω @ V GS = 2.7 V R S(ON) = 4 Ω @ V GS = 4.5 V. Very low level gate drive requirements allowing direct operation in V circuits. V GS(th) <.6V. Gate-Source Zener for ES ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one MOS FET. SOT-2 SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-22 SOIC-6 Mark: INVERTER APPLICATION Vcc OUT IN G S G S GN Absolute Maximum Ratings T A = 25 o C unless other wise noted Symbol Parameter FVN Units V SS, V CC rain-source Voltage, Power Supply Voltage 25 V V GSS, V I Gate-Source Voltage, V IN 8 V I, I O rain/output Current - Continuous 2 A P Maximum Power issipation.5 W T J,T STG Operating and Storage Temperature Range -55 to 5 C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model (pf / 5 Ohm) THERMAL CHARACTERISTICS.5 6. kv R θja Thermal Resistance, Junction-to-Ambient 57 C/W 29 Fairchild Semiconductor Corporation FVN Rev.F
Inverter Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units I O (off) Zero Input Voltage Output Current V CC = 2 V, V I = V µa V I (off) Input Voltage V CC = 5 V, I O = µa.5 V V I (on) V O =. V, I O =.5 A V R O (on) Output to Ground Resistance V I = 2.7 V, I O = A 4 5 Ω Electrical Characteristics (T A = 25 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = 25 µa 25 V BV SS / T J Breakdown Voltage Temp. Coefficient I = 25 µa, Referenced to 25 o C 25 mv / o C I SS Zero Gate Voltage rain Current V S = 2 V, V GS = V µa T J = 55 C µa I GSS Gate - Body Leakage Current V GS = 8 V, V S = V na ON CHARACTERISTICS (Note) V GS(th) / T J Gate Threshold Voltage Temp. Coefficient I = 25 µa, Referenced to 25 o C -2. mv / o C V GS(th) Gate Threshold Voltage V S = V GS, I = 25 µa.7.85.6 V R S(ON) Static rain-source On-Resistance V GS = 2.7 V, I = A.8 5 Ω T J =25 C 6. 9 V GS = 4.5 V, I =.4 A. 4 I (ON) On-State rain Current V GS = 2.7 V, V S = 5 V A g FS Forward Transconductance V S = 5 V, I =.4 A S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V GS = V, 9.5 pf C oss Output Capacitance f =. MHz 6 pf C rss Reverse Transfer Capacitance. pf SWITCHING CHARACTERISTICS (Note) t (on) Turn - On elay Time V = 6 V, I =.5 A,.2 8 ns t r Turn - On Rise Time V GS = 4.5 V, R GEN = 5 Ω 6 5 ns t (off) Turn - Off elay Time.5 8 ns t f Turn - Off Fall Time.5 8 ns Q g Total Gate Charge V S = 5 V, I = A,.49.7 nc Q gs Gate-Source Charge V GS = 4.5 V 2 nc Q gd Gate-rain Charge.7 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous rain-source iode Forward Current 9 A V S rain-source iode Forward Voltage V GS = V, I S = 9 A (Note).8.2 V Note: Pulse Test: Pulse Width < µs, uty Cycle < 2.%. FVN Rev.F
S Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A).5.4.. V = 4.5V GS 4..5. 2.7 2.5 2..5 R S(on ), NORMALIZE RAIN-SOURCE ON-RESISTANCE.4.2.8 V = 2.V GS 2.5 2.7..5 4. 4.5.5.5 2 2.5 V, RAIN-SOURCE VOLTAGE (V) S.6...4.5 I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.8.6.4.2.8 I = A V GS = 2.7 V.6-5 -25 25 5 75 25 5 T, JUNCTION TEMPERATURE ( C) J R S(on), ON-RESISTANCE (OHM) 5 2 9 6 25 C 25 C 2 2.5.5 4 V GS, GATE TO SOURCE VOLTAGE (V) I = A Figure. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To-Source Voltage. I, RAIN CURRENT (A).5..5 V = 5.V S T = -55 C J 25 C 25 C.5.5 2 2.5 V, GATE TO SOURCE VOLTAGE (V) GS I, REVERSE RAIN CURRENT (A).5... V GS = V T = 25 C J 25 C -55 C..4.6.8.2 V, BOY IOE FORWAR VOLTAGE (V) S Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FVN Rev.F
Typical Electrical And Thermal Characteristics V GS, GATE-SOURCE VOLTAGE (V) 5 4 2 I = A...4.5.6 Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics. V S = 5V V 5V CAPACITANCE (pf) 2 5 2 f = MHz V GS = V..5 2 5 25 V, RAIN TO SOURCE VOLTAGE (V) S Figure 8. Capacitance Characteristics. C iss C oss C rss I, RAIN CURRENT (A).5..5.2 RS(ON) LIMIT V GS = 2.7V SINGLE PULSE R θ JA = 57 C/W T A = 25 C..5 2 5 5 25 5 V, RAI N-SOURCE VOLTAGE (V) S C s s ms ms POWER (W) 5 4 2... SINGLE PULSE TIME (SEC) SINGLE PULSE R θja =57 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation..5 =.5 r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE..5.2..5.2..5.2. Single Pulse R θja (t) = r(t) * R θja R θja = 57 C/W T J - T = P * R (t) A θja uty Cycle, = t /t 2..... t, TIME (sec) P(pk) t t 2 Figure. Transient Thermal Response Curve. FVN Rev.F
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