VS-HF6PB20PbF, VS-HF6PB20-N3 HEXFRED Ultrafast Soft Recovery Diode, 6 FETURES Ultrafast and ultrasoft recovery TO-247 modified athode to base PRODUT SUMMRY Package TO-247 modified (2 pins) I F(V) 6 V R 200 V V F at I F 2.3 V t rr typ. 30 ns T J max. 50 Diode variation Single die 2 2 3 athode node 3 Very low I RRM and Q rr Designed and qualified according to JEDE -JESD47 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count vailable DESRIPTION VS-HF6PB20... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 200 V and 6 continuous current, the VS-HF6PB20... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HF6PB20... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS athode to anode voltage V R 200 V Maximum continuous forward current I F T = 00 6 Single pulse forward current I FSM 90 Maximum repetitive forward current I FRM 64 T = 25 5 Maximum power dissipation P D T = 00 60 W Operating junction and storage temperature range T J, T Stg -55 to +50 Revision: 05-pr-6 Document Number: 94057 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-HF6PB20PbF, VS-HF6PB20-N3 ELETRIL SPEIFITIONS ( unless otherwise specified) Maximum forward voltage V FM PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS athode to anode breakdown voltage V BR I R = 00 μ 200 - - I F = 32 See fig. - 3.2 3.93 I F = 6-2.5 3.0 V I F = 6, - 2.3 2.7 Maximum reverse V R = V R rated - 0.75 20 I leakage current RM See fig. 2 μ, V R = 0.8 x V R rated - 375 2000 Junction capacitance T See fig. 3-27 40 pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh DYNMI REOVERY HRTERISTIS ( unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Reverse recovery time See fig. 5, 0 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during t b See fig. 8 t rr I F =.0, di F /dt = 200 /μs, V R = 30 V - 30 - t rr - 90 35 t rr2-64 245 I RRM - 5.8 0 I RRM2 I F = 6-8.3 5 Q rr di F /dt = 200 /μs - 260 675 Q rr2-680 838 di (rec)m /dt - 20 - di (rec)m /dt2-76 - ns n /μs THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Lead temperature T lead 0.063" from case (.6 mm) for 0 s - - 300 Thermal resistance, junction to case R thj - - 0.83 Thermal resistance, junction to ambient R thj Typical socket mount - - 80 K/W Thermal resistance, case to heatsink R ths Mounting surface, flat, smooth and greased - 0.50 - Weight Mounting torque - 2.0 - g - 0.07 - oz. Marking device ase style TO-247 modified (JEDE) HF6PB20 6.0 (5.0) - 2 (0) kgf cm (lbf in) Revision: 05-pr-6 2 Document Number: 94057 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-HF6PB20PbF, VS-HF6PB20-N3 I F - Instantaneous Forward urrent () 00 0 T J = 50 0. 0 2 4 6 8 I R - Reverse urrent (µ) 000 00 0 0. T J = 50 T J = 25 0.0 0 200 400 600 800 000 200 V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage 000 T - Junction apacitance (pf) 00 0 0 00 000 0 000 V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Response 0. Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.0 D = 0.05 D = 0.02 D = 0.0 0.0 0.0000 0.000 0.00 0.0 0. 0 00 t - Rectangular Pulse Duration (s) P DM Notes:. Duty factor D = t /t. 2 2. Peak T J = P DM x Z thj + T t t 2 Fig. 4 - Maximum Thermal Impedance Z thj haracteristics Revision: 05-pr-6 3 Document Number: 94057 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-HF6PB20PbF, VS-HF6PB20-N3 t rr (ns) 270 220 70 20 I F = 6 I F = 8 Q rr (n) 600 400 200 000 800 600 I F = 6 I F = 8 70 400 200 20 00 000 di F /dt (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt (Per Leg) 0 00 000 di F /dt (/µs) Fig. 7 - Typical Stored harge vs. di F /dt (Per Leg) 30 25 0 000 I RR () 20 5 0 I F = 6 I F = 8 di (rec)m /dt (/µs) 000 I F = 6 I F = 8 00 5 0 00 000 di F /dt (/µs) Fig. 6 - Typical Recovery urrent vs. di F /dt (Per Leg) 0 00 000 di F /dt (/µs) Fig. 8 - Typical di (rec)m /dt vs. di F /dt (Per Leg) L = 70 μh 0.0 Ω di F /dt adjust G D IRFP250 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test ircuit Revision: 05-pr-6 4 Document Number: 94057 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-HF6PB20PbF, VS-HF6PB20-N3 (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 0 - Reverse Recovery Waveform and Definitions ORDERING INFORMTION TBLE Device code VS- HF 6 PB 20 PbF 2 3 4 5 6 7 - product 2 - HEXFRED family 3 - Electron irradiated 4 - urrent rating (6 = 6 ) 5 - PB = TO-247 modified 6 - Voltage rating: (20 = 200 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-HF6PB20PbF 25 500 ntistatic plastic tube VS-HF6PB20-N3 25 500 ntistatic plastic tube Dimensions Part marking information SPIE model LINKS TO RELTED DOUMENTS TO-247 modified PbF TO-247 modified -N3 www.vishay.com/doc?9554 www.vishay.com/doc?95255 www.vishay.com/doc?95442 www.vishay.com/doc?95672 Revision: 05-pr-6 5 Document Number: 94057 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9000
TO-247 modified Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E S 2 (6) Ø P (Datum B) Ø K M D B M Ø P D2 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E 2 x b2 3 x b 0.0 M M b4 2 x e View - Plating (b, b3, b5) Base metal DDE E (c) c (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.3 0.83 0.209 D2 0.5.30 0.020 0.05 2.2 2.59 0.087 0.02 E 5.29 5.87 0.602 0.625 3 2.50 2.49 0.059 0.098 E 3.72-0.540 - b 0.99.40 0.039 0.055 e 5.46 BS 0.25 BS b 0.99.35 0.039 0.053 Ø K 2.54 0.00 b2.65 2.39 0.065 0.094 L 4.20 6.0 0.559 0.634 b3.65 2.34 0.065 0.092 L 3.7 4.29 0.46 0.69 b4 2.59 3.43 0.02 0.35 Ø P 3.56 3.66 0.4 0.44 b5 2.59 3.38 0.02 0.33 Ø P - 6.98-0.275 c 0.38 0.89 0.05 0.035 Q 5.3 5.69 0.209 0.224 c 0.38 0.84 0.05 0.033 R 4.52 5.49 0.78 0.26 D 9.7 20.70 0.776 0.85 3 S 5.5 BS 0.27 BS D 3.08-0.55-4 Notes () Dimensioning and tolerance per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (0.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c Revision: 20-pr-7 Document Number: 95253 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9000
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