SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc Emitter Base Voltage VEBO Vdc Collector Current Continuous IC madc Total Device Dissipation @ TA = 5 C Derate above 5 C PD 65 mw mw/ C 3 CASE 9 4, STYLE TO 9 (TO 6AA) Total Device Dissipation @ TC = 5 C Derate above 5 C PD.5 Watts mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to + C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA C/W Thermal Resistance, Junction to Case R JC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted) OFF CHARACTERISTICS Collector Emitter Breakdown Voltage() (IC = madc, IE = ) Collector Base Breakdown Voltage (IC = Adc, IE = ) Emitter Base Breakdown Voltage (IE = Adc, IC = ) Characteristic Symbol Min Max Unit V(BR)CEO V(BR)CBO 3 5 4 3 Vdc Vdc V(BR)EBO Vdc Collector Cutoff Current (VCB = Vdc, IE = ) Emitter Cutoff Current (VEB = 3. Vdc, IC = ) ICBO nadc IEBO nadc. Pulse Test: Pulse Width = 3 s, Duty Cycle =.%. Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996
ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted) (Continued) ON CHARACTERISTICS DC Current Gain() (IC =. madc, VCE = Vdc) Characteristic Symbol Min Max Unit hfe 36 (IC = madc, VCE = Vdc) Collector Emitter Saturation Voltage() (IC = madc, IB = madc) Base Emitter Saturation Voltage() (IC = madc, IB = madc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (IC = madc, VCE = Vdc, f = MHz) Input Capacitance (VEB =.5 Vdc, IC =, f = MHz) Collector Base Capacitance (IE =, VCB = V, f = MHz) 5 6 VCE(sat).3 Vdc VBE(sat).95 Vdc ft 3 MHz Cibo 8. pf Ccb 4. pf Small Signal Current Gain (IC =. madc, VCE = Vdc, RS = k ohm, f = khz) hfe 48 Current Gain High Frequency (IC = madc, VCE = Vdc, f = MHz) hfe.5 3. (IC =. madc, VCE = V, f = khz) (IC =. madc, VCE = V, f = khz) 48 Noise Figure (IC = µadc, VCE = Vdc, RS = k ohm, f = khz) NF 6. db. Pulse Test: Pulse Width = 3 s, Duty Cycle =.%. 7. ts CAPACITANCE (pf) 3... Cibo Cobo..3.5.7. 3. 7. 3 4 REVERSE BIAS VOLTAGE (VOLTS) TIME (ns) 7 3. 7. tf tr VCC = 3 V IC/IB = VEB(off) =.5 V td. 3. 7. 3 7 Figure. Capacitance Figure. Switching Times Motorola Small Signal Transistors, FETs and Diodes Device Data
AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 5 C) Bandwidth = Hz SOURCE RESISTANCE = IC = ma 4 f = khz IC = ma NF, NOISE FIGURE (db) 8 6 4 SOURCE RESISTANCE = IC =.5 ma SOURCE RESISTANCE = kω IC = A NF, NOISE FIGURE (db) 8 6 4 IC =.5 ma IC = A IC = A SOURCE RESISTANCE = IC = A...4 4 4 f, FREQUENCY (khz) Figure 3. Frequency Variations...4. 4. 4 RS, SOURCE RESISTANCE (kω) Figure 4. Source Resistance h PARAMETERS (VCE = V, f = khz, TA = 5 C) hfe, CURRENT GAIN 3 7 3...5. Figure 5. Current Gain h oe, OUTPUT ADMITTANCE ( mhos) 5...5. Figure 6. Output Admittance, INPUT IMPEDANCE (k Ω ) h ie..5....5. Figure 7. Input Impedance h, VOLTAGE FEEDBACK RATIO (X 4 re ) 7. 3...7.5...5. Figure 8. Voltage Feedback Ratio Motorola Small Signal Transistors, FETs and Diodes Device Data 3
STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED)..7.5.3.....3 TJ = +5 C VCE = V +5 C 55 C.5.7. 3. 7. 3 7 Figure 9. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS).8.6.4.. IC = ma..3.5.7 TJ = 5 C ma 3 ma ma...3.5.7. 3. 7. IB, BASE CURRENT (ma) Figure. Collector Saturation Region V, VOLTAGE (VOLTS)..8.6.4. TJ = 5 C VBE(sat) @ IC/IB = VCE(sat) @ IC/IB =. Figure. On Voltages VBE @ VCE = V V, TEMPERATURE COEFFICIENTS (mv/ C) θ.5.5.5. VC for VCE(sat) VB for VBE(sat) 4 6 8 4 6 8 +5 C to +5 C 55 C to +5 C 55 C to +5 C +5 C to +5 C Figure. Temperature Coefficients 4 Motorola Small Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS SEATING PLANE R A X X H V N F G P N B L K C D J SECTION X X NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.75.5 4.45 5. B.7. 4.3 5.33 C.5.65 3.8 4.9 D.6..4.55 F.6.9.4.48 G.45.55.5.39 H.95.5.4.66 J.5..39. K..7 L. 6.35 N.8.5.4.66 P..54 R.5.93 V.35 3.43 CASE 9 4 (TO 6AA) ISSUE AD STYLE : PIN. EMITTER. BASE 3. COLLECTOR Motorola Small Signal Transistors, FETs and Diodes Device Data 5
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