Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) = 10 V 0.14 Q g (Max.) (nc) 34 Q gs (nc) 9.9 Q gd (nc) 16 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel MOSFET FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO220AB package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO220AB contribute to its wide acceptance throughout the industry. TO220AB IRF9Z34PbF SiHF9Z34E3 IRF9Z34 SiHF9Z34 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 60 V GateSource Voltage ± 20 Continuous Drain Current at 10 V T C = 25 C 18 I D T C = 100 C 13 A Pulsed Drain Current a I DM 72 Linear Derating Factor 0.59 W/ C Single Pulse Avalanche Energy b E AS 370 mj Repetitive Avalanche Current a I AR 18 A Repetitive Avalanche Energy a E AR 8.8 mj Maximum Power Dissipation T C = 25 C P D 88 W Peak Diode Recovery dv/dt c dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to + 175 Soldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 25 V, starting T J = 25 C, L = 1.3 mh, R g = 25 Ω, I AS = 18 A (see fig. 12). c. I SD 18 A, di/dt 170 A/μs, V DD, T J 175 C. d. 1.6 mm from case. 10 lbf in 1.1 N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91092 www.vishay.com S110513Rev. B, 21Mar11 1
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 1.7 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = 0 V, I D = 250 μa 60 V Temperature Coefficient Δ /T J Reference to 25 C, I D = 1 ma 0.060 V/ C GateSource Threshold Voltage (th) =, I D = 250 μa 2.0 4.0 V GateSource Leakage I GSS = ± 20 V ± 100 na = 60 V, = 0 V 100 Zero Gate Voltage Drain Current I DSS = 48 V, = 0 V, T J = 150 C 500 μa DrainSource OnState Resistance R DS(on) = 10 V I D = 11 A b 0.14 Ω Forward Transconductance g fs = 25 V, I D = 11 A b 5.9 S Dynamic Input Capacitance C iss = 0 V, 1100 Output Capacitance C oss = 25 V, 620 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5 100 Total Gate Charge Q g I D = 1 8 A, 34 GateSource Charge Q gs = 10 V = 48 V, 9.9 nc see fig. 6 and 13 b GateDrain Charge Q gd 16 TurnOn Delay Time t d(on) 18 Rise Time t r V DD = 30 V, I D = 18 A, 120 TurnOff Delay Time t d(off) R g = 12 Ω, R D = 1.5 Ω, see fig. 10 b 20 ns Fall Time t f 58 Between lead, Internal Drain Inductance L D 6 mm (0.25") from 4.5 D package and center of nh G Internal Source Inductance L S die contact 7.5 S DrainSource Body Diode Characteristics MOSFET symbol Continuous SourceDrain Diode Current I S showing the 18 D integral reverse G Pulsed Diode Forward Current a I SM p n junction diode 72 S A Body Diode Voltage V SD T J = 25 C, I S = 18 A, = 0 V b 6.3 V Body Diode Reverse t rr 100 200 ns Recovery Time T J = 25 C, I F = 18 A, di/dt = 100 A/μs b Body Diode Reverse Recovery Charge Q rr 0.28 0.52 μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com Document Number: 91092 2 S110513Rev. B, 21Mar11
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, Drain Current (A) 10 2 10 1 Top Bottom 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.5 V I D, Drain Current (A) 10 1 25 C 175 C 10 0 20 µs Pulse Width T C = 25 C 10 0 20 µs Pulse Width = 25 V 10 1 10 0 10 1 4 5 6 7 8 9 10 91092_01, DraintoSource Voltage (V) 91092_03, GatetoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 25 C Fig. 3 Typical Transfer Characteristics I D, Drain Current (A) 91092_02 10 2 10 1 10 0 Top Bottom 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 175 C 10 1 10 0 10 1, DraintoSource Voltage (V) 4.5 V R DS(on), DraintoSource On Resistance (Normalized) 91092_04 2.5 2.0 1.5 1.0 0.5 I D = 18 A = 10 V 0.0 60 40 20 0 20 40 60 80 100 120 140 160 180 T J, Junction Temperature ( C) Fig. 2 Typical Output Characteristics, T C = 175 C Fig. 4 Normalized OnResistance vs. Temperature Document Number: 91092 www.vishay.com S110513Rev. B, 21Mar11 3
Capacitance (pf) 91092_05 2000 1600 1200 800 400 0 10 0 10 1 = 0 V, f = 1 MHz C iss = C gs + C gd, C ds Shorted C rss = C gd C oss = C ds + C gd C iss C oss C rss, DraintoSource Voltage (V) I SD, Reverse Drain Current (A) 91092_07 10 1 175 C 25 C 10 0 = 0 V 0.0 1.0 2.0 3.0 4.0 5.0 V SD, SourcetoDrain Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Fig. 7 Typical SourceDrain Diode Forward Voltage, GatetoSource Voltage (V) 20 16 12 8 4 I D = 18 A = 30 V = 48 V For test circuit see figure 13 0 0 5 10 15 20 25 30 35 I D, Drain Current (A) 10 3 5 2 10 2 5 2 10 5 2 1 0.1 2 5 Operation in this area limited by R DS(on) 1 T C = 25 C T J = 175 C Single Pulse 2 5 10 µs 100 µs 1 ms 10 ms 10 2 5 10 2 2 5 10 3 91092_06 Q G, Total Gate Charge (nc) 91092_08, DraintoSource Voltage (V) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating Area www.vishay.com Document Number: 91092 4 S110513Rev. B, 21Mar11
R D 20 D.U.T. R G I D, Drain Current (A) 91092_09 16 12 8 4 0 25 50 75 100 125 150 175 T C, Case Temperature ( C) 10 V Pulse width 1 µs Duty factor 0.1 % V + DD Fig. 10a Switching Time Test Circuit 10 % t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature 90 % Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse (Thermal Response) 10 2 10 5 10 4 10 3 10 2 0.1 1 10 P DM t 1 t 2 Notes: 1. Duty Factor, D = t 1 /t 2 2. Peak T j = P DM x Z thjc + T C 91092_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase Document Number: 91092 www.vishay.com S110513Rev. B, 21Mar11 5
Vary t p to obtain required I AS L I AS R G D.U.T + V DD I AS V DD 10 V t p 0.01 Ω t p Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) 91092_12c 1200 1000 800 600 400 200 Top Bottom I D 7.3 A 13 A 18 A V DD = 25 V 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( C) Fig. 12c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q GS Q GD D.U.T. + V G Charge Fig. 13a Basic Gate Charge Waveform 3 ma Fig. 13b Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 91092 6 S110513Rev. B, 21Mar11
+ IRF9Z34, SiHF9Z34 Peak Diode Recovery dv/dt Test Circuit D.U.T. + Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer + R g dv/dt controlled by R g I SD controlled by duty factor D D.U.T. device under test + V DD Note Compliment NChannel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period = 10 V a D.U.T. l SD waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt Body diode forward drop Inductor current V DD Ripple 5 % Note a. = 5 V for logic level and 3 V drive devices Fig. 14 For PChannel I SD maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91092. Document Number: 91092 www.vishay.com S110513Rev. B, 21Mar11 7
Package Information TO220AB D L H(1) Q L(1) 1 E 2 3 * M b(1) Ø P A F MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X100416Rev. M, 01Nov10 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM e b C e(1) J(1) Document Number: 71195 www.vishay.com Revison: 01Nov10 1
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