Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.24 Q g (Max.) (nc) 24 Q gs (nc) 40 Q gd (nc) 57 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel MOSFET FEATURES Low Gate Charge Q g Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective C oss Specified Lead (Pb)-free Available APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGIES Full Bridge Power Factor Correction Boost TO-247 IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30 Continuous Drain Current V GS at V T C = 25 C 20 I D T C = 0 C 3 A Pulsed Drain Current a I DM 80 Linear Derating Factor 2.2 W/ C Single Pulse Avalanche Energy b E AS 340 mj Repetitive Avalanche Current a I AR 20 A Repetitive Avalanche Energy a E AR 28 mj Maximum Power Dissipation T C = 25 C P D 280 W Peak Diode Recovery dv/dt c dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J, T stg - 55 to 50 Soldering Recommendations (Peak Temperature) for s 300 d C Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Starting T J = 25 C, L =.8 mh, R G = 25 Ω, I AS = 20 A (see fig. 2). c. I SD 20 A, di/dt 40 A/µs, V DD V DS, T J 50 C. d..6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply lbf in. N m Document Number: 9236 www.vishay.com S-Pending-Rev. B, 23-Jul-08 WORK-IN-PROGRESS
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thja - 40 Case-to-Sink, Flat, Greased Surface R thcs 0.24 - C/W Maximum Junction-to-Case (Drain) R thjc - 0.45 SPECIFICATIONS T J = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µa 500 - - V V DS Temperature Coefficient ΔV DS /T J Reference to 25 C, I D = ma - 580 - mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250 µa 3.0-5.0 V Gate-Source Leakage I GSS V GS = ± 30 V - - ± 0 na V DS = 500 V, V GS = 0 V - - 25 Zero Gate Voltage Drain Current I DSS V DS = 400 V, V GS = 0 V, T J = 25 C - - 250 µa Drain-Source On-State Resistance R DS(on) V GS = V I D = 2 A b - - 0.24 Ω Forward Transconductance g fs V DS = 50 V, I D = 2 A - - S Dynamic Input Capacitance C iss V GS = 0 V, - 3540 - Output Capacitance C oss V DS = 25 V, - 350 - f =.0 MHz, see fig. 5 Reverse Transfer Capacitance C rss - 30 - pf V DS =.0 V, f =.0 MHz - 3930 - Output Capacitance C oss V GS = 0 V V DS = 400 V, f =.0 MHz - 95 - Effective Output Capacitance C oss eff. V DS = 0 V to 400 V c - 200 - Total Gate Charge Q g - - 24 Gate-Source Charge Q gs I V GS = V D = 20 A, V DS = 400 V see fig. 6 and 3 b - - 40 nc Gate-Drain Charge Q gd - - 57 Turn-On Delay Time t d(on) - 23 - Rise Time t r V DD = 250 V, I D = 20 A - 87 - R G = 4.3 Ω, R D = 3 Ω, Turn-Off Delay Time t d(off) see fig. b - 34 - ns Fall Time t f - 33 - Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I S - - 20 showing the integral reverse A G Pulsed Diode Forward Current a I SM p - n junction diode - - 80 Body Diode Voltage V SD T J = 25 C, I S = 20 A, V GS = 0 V b - -.8 V Body Diode Reverse t rr - 550 825 ns Recovery Time T J = 25 C, I F = 20 A, di/dt = 0 A/µs b Body Diode Reverse Recovery Charge Q rr - 7.2.8 µc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 300 µs; duty cycle 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80 % V DS. S www.vishay.com Document Number: 9236 2 S-Pending-Rev. B, 23-Jul-08
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted I D, Drain-to-Source Current (A) 0 0. 0.0 VGS TOP 5V 2V V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 5.0V I D, Drain-to-Source Current (A) 0 T J = 50 C T J = 25 C 20µs PULSE WIDTH 0.00 T J = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. - Typical Output Characteristics V DS= 50V 20µs PULSE WIDTH 0. 5 6 7 8 9 V GS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics I D, Drain-to-Source Current (A) 0 VGS TOP 5V 2V V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 5.0V 20µs PULSE WIDTH 0. T J = 50 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics R DS(on), Drain-to-Source On Resistance (Normalized) 3.5 I D = 20A 3.0 2.5 2.0.5.0 0.5 V GS = V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T, Junction Temperature ( J C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 9236 www.vishay.com S-Pending-Rev. B, 23-Jul-08 3
I D, Drain-to-Source Current (A) C, Capacitance(pF) IRFP460N, SiHFP460N 0000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED 0 000 00 0 C rss = C gd C oss = C ds C gd Ciss Coss Crss I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C 0 00 V DS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage V GS = 0 V 0. 0.2 0.4 0.6 0.8.0.2.4.6 V SD,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage V GS, Gate-to-Source Voltage (V) 20 6 2 8 4 I = D 20A V DS = 400V V DS = 250V V DS = 0V FOR TEST CIRCUIT SEE FIGURE 3 0 0 20 40 60 80 0 20 40 Q G, Total Gate Charge (nc) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 00 0 0. T A = 25 C T J = 50 C Single Pulse OPERATION IN THIS AREA LIMITED BY R DS (on) 0µsec msec msec 0 00 000 V DS, Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area www.vishay.com Document Number: 9236 4 S-Pending-Rev. B, 23-Jul-08
I D, Drain Current (A) 20 5 5 R G V GS V V DS Pulse width µs Duty factor 0. % R D D.U.T. Fig. a - Switching Time Test Circuit V DS 90 % - V DD 0 25 50 75 0 25 50 T C, Case Temperature ( C) Fig. 9 - Maximum Drain Current vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig. b - Switching Time Waveforms Thermal Response (Z thjc ) 0. 0.0 D = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 0.00 2. Peak T J = P DM x Z thjc TC 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (s) Fig. - Maximum Effective Transient Thermal Impedance, Junction-to-Case PDM t t2 V DS 5 V t p V DS L Driver R G 20 V t p D.U.T. I AS 0.0 Ω - V DD A A I AS Fig. 2a - Unclamped Inductive Test Circuit Fig. 2b - Unclamped Inductive Waveforms Document Number: 9236 www.vishay.com S-Pending-Rev. B, 23-Jul-08 5
E AS, Single Pulse Avalanche Energy (mj) 750 600 450 300 50 I D TOP 8.9A 2.6A BOTTOM 20A 0 25 50 75 0 25 50 Starting T, Junction Temperature ( J C) Fig. 2c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 50 kω V Q GS Q GD 2 V 0.2 µf 0.3 µf D.U.T. V - DS V G V GS 3 ma Charge Fig. 3a - Basic Gate Charge Waveform I G I D Current sampling resistors Fig. 3b - Gate Charge Test Circuit www.vishay.com Document Number: 9236 6 S-Pending-Rev. B, 23-Jul-08
Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period V GS = V* D.U.T. I SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. V DS waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I SD * V GS = 5 V for logic level devices Fig. 4 - For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?9236 Document Number: 9236 www.vishay.com S-Pending-Rev. B, 23-Jul-08 7
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