Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) = 0.80 Q g (Max.) (nc) 14 Q gs (nc) 3.0 Q gd (nc) 7.9 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO220AB G DS G D S NChannel MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO220AB package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)free SnPb TO220AB IRF620PbF SiHF620E3 IRF620 SiHF620 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 200 V GateSource Voltage ± 20 Continuous Drain Current at T C = 25 C 5.2 I D T C = 100 C 3.3 A Pulsed Drain Current a I DM 18 Linear Derating Factor 0.40 W/ C Single Pulse Avalanche Energy b E AS 110 mj Repetitive Avalanche Current a I AR 5.2 A Repetitive Avalanche Energy a E AR 5.0 mj Maximum Power Dissipation T C = 25 C P D 50 W Peak Diode Recovery dv/dt c dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 150 Soldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 25 C, L = 6.1 mh, R g = 25, I AS = 5.2 A (see fig. 12). c. I SD 5.2 A, di/dt 95 A/μs, V DD, T J 150 C. d. 1.6 mm from case. 10 lbf in 1.1 N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91027 www.vishay.com S110510Rev. B, 21Mar11 1
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 2.5 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = 0 V, I D = 250 μa 200 V Temperature Coefficient /T J Reference to 25 C, I D = 1 ma 0.29 V/ C GateSource Threshold Voltage (th) =, I D = 250 μa 2.0 4.0 V GateSource Leakage I GSS = ± 20 V ± 100 na = 200 V, = 0 V 25 Zero Gate Voltage Drain Current I DSS = 160 V, = 0 V, T J = 125 C 250 μa DrainSource OnState Resistance R DS(on) = I D = 3.1 A b 0.80 Forward Transconductance g fs = 50 V, I D = 3.1 A 1.5 S Dynamic Input Capacitance C iss = 0 V, 260 Output Capacitance C oss = 25 V, 100 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5 30 Total Gate Charge Q g 14 GateSource Charge Q gs I = D = 4.8 A, = 160 V, see fig. 6 and 13 b 3.0 nc GateDrain Charge Q gd 7.9 TurnOn Delay Time t d(on) 7.2 Rise Time t r V DD = 100 V, I D = 4.8 A, 22 TurnOff Delay Time t d(off) R g = 18, R D = 20, see fig. 10 b 19 ns Fall Time t f 13 Internal Drain Inductance L D Between lead, D 4.5 6 mm (0.25") from package and center of G Internal Source Inductance L S die contact 7.5 DrainSource Body Diode Characteristics MOSFET symbol Continuous SourceDrain Diode Current I S showing the 5.2 D integral reverse G Pulsed Diode Forward Current a I SM p n junction diode 18 S S nh A Body Diode Voltage V SD T J = 25 C, I S = 5.2 A, = 0 V b 1.8 V Body Diode Reverse Recovery Time t rr 150 300 ns T J = 25 C, I F = 4.8 A, di/dt = 100 A/ s Body Diode Reverse Recovery Charge Q rr 0.91 1.8 μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com Document Number: 91027 2 S110510Rev. B, 21Mar11
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 1 10 0 10 1 Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.5 V 20 µs Pulse Width T C = 25 C 10 1 10 0 10 1 150 C 25 C 20 µs Pulse Width = 50 V 10 2 10 2 10 1 10 0 10 1 4 5 6 7 8 9 10 91027_01, DraintoSource Voltage (V) 91027_03, GatetoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 25 C Fig. 3 Typical Transfer Characteristics 91027_02 10 1 10 0 10 1 Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 10 2 10 1 10 0 10 1, DraintoSource Voltage (V) 4.5 V 20 µs Pulse Width T C = 150 C R DS(on), DraintoSource On Resistance (Normalized) 91027_04 3.0 2.5 2.0 1.5 1.0 0.5 I D = 4.8 A = 0.0 60 40 20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature ( C) Fig. 2 Typical Output Characteristics, T C = 150 C Fig. 4 Normalized OnResistance vs. Temperature Document Number: 91027 www.vishay.com S110510Rev. B, 21Mar11 3
Capacitance (pf) 91027_05 750 600 450 300 150 0 10 0 10 1 = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss, DraintoSource Voltage (V) I SD, Reverse Drain Current (A) 91027_07 10 1 150 C 25 C 10 0 = 0 V 0.5 0.8 1.0 1.3 1.5 V SD, SourcetoDrain Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Fig. 7 Typical SourceDrain Diode Forward Voltage, GatetoSource Voltage (V) 91027_06 20 16 12 8 4 I D = 4.8 A = 40 V = 100 V = 160 V For test circuit see figure 13 0 0 3 6 9 12 15 Q G, Total Gate Charge (nc) 91027_08 10 2 5 2 10 5 2 1 5 2 0.1 0.1 2 5 Operation in this area limited by R DS(on) T C = 25 C T J = 150 C Single Pulse 2 5 1 10 2 5 10 2, DraintoSource Voltage (V) 10 µs 100 µs 1 ms 10 ms 2 5 10 3 Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating Area www.vishay.com Document Number: 91027 4 S110510Rev. B, 21Mar11
R D 6.0 D.U.T. R G 5.0 V DD 4.0 3.0 2.0 1.0 Pulse width 1 µs Duty factor 0.1 % Fig. 10a Switching Time Test Circuit 90 % 91027_09 0.0 25 50 75 100 125 150 T C, Case Temperature ( C) 10 % t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) 1 0.1 0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse (Thermal Response) 10 2 10 5 10 4 10 3 10 2 0.1 1 10 P DM t 1 t 2 Notes: 1. Duty Factor, D = t 1 /t 2 2. Peak T j = P DM x Z thjc T C 91027_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase L Vary t p to obtain required I AS t p V DD R G D.U.T. I AS V DD A t p 0.01 Ω I AS Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms Document Number: 91027 www.vishay.com S110510Rev. B, 21Mar11 5
E AS, Single Pulse Energy (mj) 91027_12c 300 250 200 150 100 50 Top Bottom V DD = 50 V 0 25 50 75 100 125 150 Starting T J, Junction Temperature ( C) I D 2.3 A 3.3 A 5.2 A Fig. 12c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 12 V 0.2 µf 50 kω 0.3 µf Q GS Q GD D.U.T. V DS V G Charge Fig. 13a Basic Gate Charge Waveform 3 ma Fig. 13b Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 91027 6 S110510Rev. B, 21Mar11
Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period = a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. = 5 V for logic level devices Fig. 14 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91027. Document Number: 91027 www.vishay.com S110510Rev. B, 21Mar11 7
www.vishay.com Package Information TO2201 D L H(1) Q L(1) 1 E 2 3 M * b(1) Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X150364Rev. C, 14Dec15 DWG: 6031 Note M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM e b C e(1) J(1) ASE Package Picture Xi an Revison: 14Dec15 1 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHSCompliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) recast, unless otherwise specified as noncompliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as HalogenFree follow HalogenFree requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249221 definition. We confirm that all the products identified as being compliant to IEC 61249221 conform to JEDEC JS709A standards. Revision: 02Oct12 1 Document Number: 91000