APN149 Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers Product Description X = 4.4mm Y = 2.28mm Product Features RF frequency: 18 to 23 GHz Linear Gain: 20 db typ. Psat: 38 dbm typ. Efficiency @ P3dB > 30 % Die Size: < 10.032 sq. mm. 0.2um GaN HEMT 4 mil SiC substrate DC Power: 28 VDC @ 537 ma The APN149 monolithic GaN HEMT amplifier is a broadband, two-stage power device, designed for use in Point-to-Point and Multipoint Digital Radios, Military SatCom and Radar Applications. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Au-based that is compatible with epoxy and eutectic die attach methods. Performance Characteristics (Ta = 25 C) Specification Min Typ Max Unit Frequency 18 23 GHz Linear Gain 18 20 db Input Return Loss 2 4 db Output Return Loss 7 10 db P1dB 36 dbm P3dB 38 dbm PAE @ P3dB 32 % Vd1=Vd2 28 V Vg1-4.5 V Vg2-4.6 V Id1 143 ma Id2 394 ma Absolute Maximum Ratings (Ta = 25 C) Parameter Min Max Unit Vd1, Vd2 TBD V Id1 TBD ma Id2 TBD ma Vg1, Vg2 TBD TBD V Input drive level TBD dbm Assy. Temperature 300 deg. C (60 seconds) Page 1 of 6
APN149 Measured Performance Characteristics (Typical Performance at 25 C) Vd = 28.0 V, Id1 = 143 ma, Id2 = 394 ma * Linear Gain vs. Frequency Power vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency * Pulsed-Power On-Wafer Page 2 of 6
Pout (dbm), Gain (db) Pout (dbm), Gain (db), PAE% APN149 Measured Performance Characteristics (Typical Performance at 25 C) Power vs. Frequency * Power vs. Frequency ** 40 35 40 35 30 25 20 15 10 5 Gain(dB) P1dB(dBm) @ 28V P3dB(dBm) @ 28V 0 17 18 19 20 21 22 23 24 Frequency (GHz) 30 25 20 15 10 5 Gain SS (db) P1dB (dbm) P3dB (dbm) PAE%@P3dB 0 17 18 19 20 21 22 23 24 Frequency (GHz) * Pulsed-Power On-Wafer Vd = 28.0 V, Id1 = 143 ma, Id2 = 394 ma ** CW Fixtured Vd = 28.0 V, Id1 = 144 ma, Id2 = 400 ma Page 3 of 6
APN149 Measured Performance Characteristics (Typical Performance at 25 C) Vd = 28.0 V, Id1 = 143 ma, Id2 = 394 ma * Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag 12.5 0.70 36.51 0.83-123.30 0.00 136.80 0.86 13.0 0.71 21.54 1.06-141.00 0.00 129.00 0.86 13.5 0.72 5.34 1.40-160.40 0.00 117.70 0.86 14.0 0.73-11.76 1.84 179.60 0.00 99.57 0.84 14.5 0.75-29.90 2.46 157.20 0.00 70.59 0.81 15.0 0.77-48.39 3.21 134.40 0.00 45.16 0.77 15.5 0.80-67.07 4.28 110.10 0.00 21.29 0.72 16.0 0.81-86.49 5.56 83.58 0.00 1.33 0.64 16.5 0.82-106.30 7.23 54.95 0.01-23.31 0.53 17.0 0.79-126.40 9.01 22.31 0.01-55.13 0.39 17.5 0.72-146.40 10.72-12.19 0.01-92.72 0.26 18.0 0.61-164.10 11.75-47.61 0.01-129.10 0.22 18.5 0.50-178.00 12.03-81.65 0.01-159.90 0.24 19.0 0.40 171.80 12.00-113.90 0.01 166.30 0.25 19.5 0.32 166.30 11.76-143.60 0.01 134.20 0.22 20.0 0.27 163.50 11.80-172.40 0.01 104.90 0.16 20.5 0.21 159.00 11.57 160.00 0.01 79.29 0.12 21.0 0.15 155.50 11.89 132.00 0.02 55.98 0.07 21.5 0.11 150.20 11.94 104.10 0.02 30.72 0.05 22.0 0.09 128.70 12.07 74.24 0.02 6.20 0.08 22.5 0.14 14.35 11.88 40.97 0.02-21.07 0.17 23.0 0.27-73.81 10.81 5.14 0.02-53.07 0.30 23.5 0.48-99.59 9.14-33.86 0.02-88.56 0.44 24.0 0.61-122.70 6.92-69.87 0.01-115.90 0.54 24.5 0.68-140.70 5.04-98.67 0.01-140.20 0.60 25.0 0.71-154.30 3.66-124.40 0.00-162.50 0.64 25.5 0.73-165.60 2.71-144.70 0.00 158.40 0.68 26.0 0.74-174.80 2.06-165.20 0.00 173.20 0.70 26.5 0.75 177.20 1.59 177.50 0.00 175.30 0.72 27.0 0.76 169.90 1.26 159.90 0.00 158.90 0.73 27.5 0.76 163.00 0.98 144.50 0.00 125.30 0.75 * Pulsed-Power On-Wafer Page 4 of 6
VG1 VD1 VG2 VD2 APN149 Die Size and Bond Pad Locations 3257µm 2681 µm 2281 µm 1881 µm RFIN X = 4400 µm 25 µm Y = 2280 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 100 x 100 0.5 µm Chip Thickness = 101 5 µm RFOUT 2280 µm 1046 µm 1046 µm 4400 µm Biasing Details: Single sided bias Page 5 of 6
VG1 VD1 VG2 VD2 APN149 Suggested Bonding Arrangement VG1 VD1 VG2 VD2 = 0.1uF = 10 Ohms = 100 pf RF Input RF Output Substrate RFIN RFOUT Substrate Recommended Assembly Notes 1. Bypass caps should be 100 pf ceramic (single-layer) placed no further than 30 mils from the amplifier. 2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output. Mounting Processes Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum recommended temp during die attach is 320oC for 30 seconds. Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up tool. CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS. Page 6 of 6 Approved for Public Release: Northrop Grumman Case 12-2045, 10/25/12