DD (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFAE MOUNT TRANSISTOR Features Epitaxial Planar Die onstruction omplementary PNP Types Available (DDA) Built-In Biasing Resistors Lead Free/RoHS ompliant (Note ) "Green" Device (Note 4 and 5) A B SOT-6 Dim Min Max A.. B.5.5 2. 2.2 Mechanical Data ase: SOT-6 ase Material: Molded Plastic. UL Flammability lassification Rating 94- Moisture Sensitivity: Level per J-STD-2 Terminals: Solderable per MIL-STD-22, Method 28 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal onnections: See Diagram Marking Information: See Diagrams & Page 5 Ordering Information: See Page 5 Weight:.6 grams (approximate) K J H D F 6 5 4 L M D.65 Nominal F..4 H.8 2.2 J. K.9. L.25.4 M..25 α 8 All Dimensions in mm 6 5 4 P/N R R2 MARKING DD24EU DD44EU DD4YU DD2JU DD4EU DDTU 22KΩ KΩ 2.2KΩ KΩ KΩ 22KΩ KΩ N7 N2 N4 N6 N N DD4TU 4.7KΩ N7 DD4TU KΩ N2 Maximum Ratings @T A = 25 unless otherwise specified R R 2 R R 2 R R 2 2 R, R2 R Only SHEMATI DIAGRAM haracteristic Symbol alue Unit Supply oltage, (6) to () and () to (4) 5 Input oltage, (2) to () and (5) to (4) DD24EU DD44EU DD4YU - to +4 - to +4-6 to +4 DD2JU -5 to +2 DD4EU IN - to +4 DDTU DD4TU DD4TU Output urrent DD24EU DD44EU DD4YU DD2JU DD4EU DDTU DD4TU DD4TU Output urrent All I (Max) ma Power Dissipation (Total) P d 2 mw Thermal Resistance, Junction to Ambient Air (Note ) R θja 625 /W Operating and Storage Temperature Range T j, T STG -55 to +5 Notes:. Mounted on FR4 P Board with recommended pad layout at http:///datasheets/ap2.pdf. 2. 5mW per element must not be exceeded.. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http:///products/lead_free/index.php. 5. Product manufactured with Date ode UO (week 4, 27) and newer are built with Green Molding ompound. Product manufactured prior to Date ode UO are built with Non-Green Molding ompound and may contain Halogens or Sb2O Fire Retardants. I O 7 5 ma DS45 Rev. 9-2 of 5 DD (xxxx) U
Electrical haracteristics @T A = 25 unless otherwise specified haracteristic Symbol Min Typ Max Unit Test ondition (DDTU & DD4TU & DD4TU only) ollector-base Breakdown oltage B BO 5 I = 5μA ollector-emitter Breakdown oltage B EO 5 I = ma Emitter-Base Breakdown oltage B EBO 5 I E = 5μA ollector utoff urrent I BO.5 μa B = 5 Emitter utoff urrent I EBO.5 μa EB = 4 ollector-emitter Saturation oltage E(sat). I /I B = 2.5mA /.25mA I /I B = ma /.ma I /I B = ma / ma DD4TU DD4TU DDTU D urrent Transfer Ratio h FE 25 6 I = ma, E = 5 Input Resistor (R ) Tolerance ΔR - + % Gain-Bandwidth Product* f T 25 MHz E =, I E = -5mA, f = MHz Input oltage Output oltage Input urrent haracteristic Symbol Min Typ Max Unit Test ondition DD24EU DD44EU DD4YU DD2JU DD4EU DD24EU DD44EU DD4YU DD2JU DD4EU DD24EU DD44EU DD4YU DD2JU DD4EU DD24EU DD44EU DD4YU DD2JU DD4EU l(off) l(on).5.5..5.5....9.9.9...4.. O(on).. I l.6.8.88.6.88 ma = 5, I O = μa O =., I O = 5mA O =., I O = 2mA O =., I O = ma O =., I O = 5mA O =., I O = ma I O /I l = ma /.5mA I O /I l = ma /.5mA I O /I l = 5mA /.25mA I O /I l = 5mA /.25mA I O /I l = ma /.5mA I = 5 Output urrent I O(off).5 μa = 5, I = D urrent Gain DD24EU DD44EU DD4YU DD2JU DD4EU G l 56 68 68 8 O = 5, I O = 5mA O = 5, I O = 5mA O = 5, I O = ma O = 5, I O = ma O = 5, I O = 5mA Input Resistor (R ) Tolerance ΔR - + % Resistance Ratio Tolerance R 2 /R -2 +2 % Gain-Bandwidth Product* f T 25 MHz E =, I E = 5mA, f = MHz * Transistor - For Reference Only DS45 Rev. 9-2 2 of 5 DD (xxxx) U
Typical urves DD2JK P D, POWER DISSIPATION (mw) 25 2 5 5, -5 5 T A, AMBIENT TEMPERATURE ( ) Fig. Derating urve One Section 5 E(SAT), OLLETOR EMITTER OLTAGE ()... 4 I /I = B 25 75-25 2 4 5 I, OLLETOR URRENT (ma) Fig. 2 E(SAT) vs. I f = MHz URRENT GAIN h FE, D OB, APAITANE (pf) 2 I, OLLETOR URRENT (ma) Fig. D urrent Gain 5 5 2 25 R, REERSE BIAS OLTAGE () Fig. 4 Output apacitance 75 = 5 O I, OLLETOR URRENT (ma).. -25 25 in, INPUT OLTAGE (). 2 4 5 6 7 8 9 in, INPUT OLTAGE () Fig. 5 ollector urrent vs. Input oltage DS45 Rev. 9-2 of 5. 2 4 5 I, OLLETOR URRENT (ma) Fig. 6 Input oltage vs. ollector urrent DD (xxxx) U
Typical urves DD4TK P D, POWER DISSIPATION (mw) 25 2 5 5-5 5 T A, AMBIENT TEMPERATURE ( ) Fig. Derating urve One Section 5 E(SAT), OLLETOR EMITTER OLTAGE ()... I /I = B 25 75-25 2 4 5 I, OLLETOR URRENT (ma) Fig. 2 E(SAT) vs. I, = E 4 f = MHz URRENT GAIN h FE, D OB, APAITANE (pf) 2 I, OLLETOR URRENT (ma) Fig. D urrent Gain 75 5 5 2 25 R, REERSE BIAS OLTAGE () Fig. 4 Output apacitance =.2 O I, OLLETOR URRENT (ma).. in, INPUT OLTAGE ().. 2 4 5 6 7 8 9 in, INPUT OLTAGE () Fig. 5 ollector urrent vs. Input oltage DS45 Rev. 9-2 4 of 5 2 4 5 I, OLLETOR URRENT (ma) Fig. 6 Input oltage vs. ollector urrent DD (xxxx) U
Ordering Information (Note 6) Device Packaging Shipping DD24EU-7-F SOT-6 /Tape & Reel DD44EU-7-F SOT-6 /Tape & Reel DD4YU-7-F SOT-6 /Tape & Reel DD2JU-7-F SOT-6 /Tape & Reel DD4EU-7-F SOT-6 /Tape & Reel DDTU-7-F SOT-6 /Tape & Reel DD4TU-7-F SOT-6 /Tape & Reel DD4TU-7-F SOT-6 /Tape & Reel Notes: 6. For packaging details, go to our website at http:///datasheets/ap27.pdf. Marking Information NXX = Product Type Marking ode See Page Diagrams YM = Date ode Marking Y = Year ex: T = 26 M = Month ex: 9 = September Date ode Key Year 22 2 24 25 26 27 28 29 2 2 22 ode N P R S T U W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode 2 4 5 6 7 8 9 O N D IMPORTANT NOTIE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS45 Rev. 9-2 5 of 5 DD (xxxx) U