v2.71 HMC75ST9 / 75ST9E Typical Applications The HMC75ST9 / HMC75ST9E is an ideal RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF and RF Applications Functional Diagram General Description Electrical Specifications, Vs=. V, Rbias= 9.1 Ohm, T A = +25 C The HMC75ST9(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to.5 GHz. Packaged in an industry standard SOT9, the amplifi er can be used as a cascadable 5 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 m output power. The HMC75ST9(E) offers 21.5 of gain and +35 m output IP3 at 5 MHz while requiring only 11 ma from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Parameter Min. Typ. Max. Units Gain DC - 1. GHz 1. - 2. GHz 2. - 3. GHz 3. -. GHz. -.5 GHz 19.5 17.5 1.5 11.5 9 21.5 19.5 16.5 13.5 Gain Variation Over Temperature DC -.5 GHz.. / C Input Return Loss DC - 1. GHz 1. - 2. GHz 2. -.5 GHz 11 1 1 Output Return Loss DC - 1. GHz 13 1. -.5 GHz 1 Reverse Isolation DC -.5 GHz 25 Output Power for 1 Compression (P1) DC - 1. GHz 1. - 2. GHz 2. - 3. GHz 3. -. GHz. -.5 GHz 19. 1. 17.5 13. 11. 22. 21. 19.5 16. 1. m m m m m Output Third Order Intercept (IP3) (Pout= m per tone, 1 MHz spacing) DC - 2.5 GHz 2.5 -.5 GHz 35 3 m m Noise Figure Features P1 Output Power: +22 m Gain: 21.5 Output IP3: +35 m Cascadable 5 Ohm I/Os Single Supply: +V to +V Industry Standard SOT9 Package DC - 3. GHz 3. -.5 GHz Supply Current (Icq) 11 135 ma Note: Data taken with broadband bias tee on device output. 3.5 3. - 7 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-25-333 Fax: 97-25-3373 Phone: Order 71-329-7 On-line at www.hittite.com Application Support: Phone: 97-25-333 Application or apps@hittite.com Support: Phone: 1--ANALOG-D
v2.71 HMC75ST9 / 75ST9E Broadband Gain & Return Loss RESPONSE () 25 2 15 1 5-5 -1-15 -2-25 -3-35 - S21 S11 S22 1 2 3 5 6 Input Return Loss vs. Temperature RETURN LOSS () -5-1 -15-2 -25-3 +5C -C -35 1 2 3 5 Reverse Isolation vs. Temperature REVERSE ISOLATION () -1-2 -3 +5C -C Gain vs. Temperature GAIN () 26 2 22 2 1 16 1 1 +5C -C 6 2 1 2 3 5 Output Return Loss vs. Temperature RETURN LOSS () -5-1 -15-2 +5C -C -25 1 2 3 5 Noise Figure vs. Temperature NOISE FIGURE () 1 6 2 +5C -C - 1 2 3 5 1 2 3 5 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-25-333 Fax: 97-25-3373 Phone: Order 71-329-7 On-line at www.hittite.com Application Support: Phone: 97-25-333 Application or apps@hittite.com Support: Phone: 1--ANALOG-D - 75
v2.71 HMC75ST9 / 75ST9E P1 vs. Temperature P1 (m) 2 2 2 16 +5C -C 1 2 3 5 Output IP3 vs. Temperature IP3 (m) 5 35 3 25 2 +5C -C 15 1 2 3 5 Icc (ma) Psat vs. Temperature Psat (m) Vcc vs. Icc Over Temperature for Fixed Vs= V, RBIAS= 9.1 Ohms 1 135 +5C 13 5 115 11 15 1 95 9 -C 5 75 6.9 7 7.1 7.2 7.3 7. 7.5 Vcc (Vdc) 2 2 2 16 +5C -C 1 2 3 5 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 11 ma @ 5 MHz GAIN (), P1 (m), Psat (m), IP3 (m) 2 36 3 2 1 6 Gain P1 Psat IP3 9 1 11 Vs (Vdc) - 76 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-25-333 Fax: 97-25-3373 Phone: Order 71-329-7 On-line at www.hittite.com Application Support: Phone: 97-25-333 Application or apps@hittite.com Support: Phone: 1--ANALOG-D
v2.71 HMC75ST9 / 75ST9E Absolute Maximum Ratings Collector Bias Voltage (Vcc) Outline Drawing +. Vdc RF Input Power (RFIN)(Vcc = +7.2 Vdc) +17 m Junction Temperature 15 C Continuous Pdiss (T = 5 C) (derate 16.6 mw/ C above 5 C) 1.9 W Thermal Resistance (junction to lead) 59.3 C/W Storage Temperature -65 to +15 C Operating Temperature - to +5 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-1S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. 3. LEAD PLATING: 1% MATTE TIN.. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H75 HMC75ST9 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H75 HMC75ST9E RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 C [2] Max peak refl ow temperature of 26 C [3] -Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-25-333 Fax: 97-25-3373 Phone: Order 71-329-7 On-line at www.hittite.com Application Support: Phone: 97-25-333 Application or apps@hittite.com Support: Phone: 1--ANALOG-D - 77
v2.71 HMC75ST9 / 75ST9E Pin Descriptions Pin Number Function Description Interface Schematic 1 IN Application Circuit Recommended Bias Resistor Values for Icc= 11 ma, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) V 9V 1V V RBIAS VALUE 9.1 Ω 1 Ω 27 Ω 3 Ω RBIAS POWER RATING ¼ W ½ W ½ W 1 W This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, GND These pins and package bottom must be connected to RF/ DC ground. Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 5 9 19 22 2 35 5 L1 27 nh 56 nh 1 nh 1 nh 15 nh.2 nh 6. nh C1, C2.1 μf 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf - 7 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-25-333 Fax: 97-25-3373 Phone: Order 71-329-7 On-line at www.hittite.com Application Support: Phone: 97-25-333 Application or apps@hittite.com Support: Phone: 1--ANALOG-D
v2.71 HMC75ST9 / 75ST9E Evaluation PCB List of Materials for Evaluation PCB 11692 [1] Item J1 - J2 J3 - J Description PCB Mount SMA Connector DC Pin C1, C2 Capacitor, 2 Pkg. C3 C C5 R1 L1 U1 PCB [2] 1 pf Capacitor, 2 Pkg. 1 pf Capacitor, 63 Pkg. 2.2 μf Capacitor, Tantalum Resistor, 6 Pkg. Inductor, 63 Pkg. HMC75ST9 / HMC75ST9E 1736 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 35 The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-25-333 Fax: 97-25-3373 Phone: Order 71-329-7 On-line at www.hittite.com Application Support: Phone: 97-25-333 Application or apps@hittite.com Support: Phone: 1--ANALOG-D - 79