1W High Linearity and High Efficiency GaAs Power FETs FEATURES! 1W Typical Power at 6 GHz PHOTO ENLARGEMENT! Linear Power Gain: G L = 13 db Typical at 6 GHz! High Linearity: IP3 = 4 dbm Typical at 6 GHz! High Power Added Efficiency: Nominal PAE of 43% at 6 GHz! Via Hole Source Ground! Suitable for High Reliability Application! Breakdown Voltage: BV DGO 15 V! Lg =.35 µm, Wg = 2.4 mm! Tight Vp ranges control! High RF input power handling capability! 1 % DC Tested DESCRIPTION The TC151 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 2GHz. All devices are 1% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include commercial and military high performance power amplifiers. ELECTRICAL SPECIFICATIONS (T A =25 C) Symbol Conditions MIN TYP MAX UNIT P 1dB Output Power at 1dB Gain Compression Point, f = 6 GHz V DS = 8 V, I DS = 24 ma 29.5 3 dbm G L Linear Power Gain, f = 6 GHz V DS = 8 V, I DS = 24 ma 12 13 db IP3 Intercept Point of the 3 rd -order Intermodulation, f = 6 GHz V DS = 8 V, I DS = 24 ma,*p SCL = 17 dbm 4 dbm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 43 % I DSS Saturated Drain-Source Current at V DS = 2 V, V GS = V 6 ma g m Transconductance at V DS = 2 V, V GS = V 4 ms V P Pinch-off Voltage at V DS = 2 V, I D = 4.8 ma -1.7** Volts BV DGO Drain-Gate Breakdown Voltage at I DGO =1.2 ma 15 18 Volts R th Thermal Resistance 12 C/W Note: * P SCL : Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage. TC151 s are divided into 3 groups: (1) TC151P1519 : Vp = -1.5V to -1.9V (2) TC151P162 : Vp = -1.6V to -2.V (3)TC151P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. 1 / 5
ABSOLUTE MAXIMUM RATINGS (T A =25 C) Symbol Parameter Rating V DS Drain-Source Voltage 12 V V GS Gate-Source Voltage -5 V I DS Drain Current I DSS P in RF Input Power, CW 28 dbm P T Continuous Dissipation 3.8 W T CH Channel Temperature 175 C T STG Storage Temperature - 65 C to +175 C CHIP DIMENSIONS 6± 12 D G D G 47± 12 Units: Micrometers Chip Thickness: 5 Gate Pad: 79 x 59.5 Drain Pad: 86. x 76. CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (8%Au-2%Sn) perform at stage temperature: 29 C ± 5 C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with.7 to 1. mil (.18 to.25 mm) gold wire. Stage temperature: 22 C to 25 C; Bond Tip Temperature: 15 C; Bond Force: 2 to 3 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 3V. 2 / 5
TYPICAL SCATTERING PARAMETERS (T A =25 C) V DS = 8 V, I DS = 24 ma.4.6.4.8.6.8 1. 1. S11 2. 2. 18GHz 1.1. Mag Max.4 165 15-18 135 12 15 9 75 6 45 18 GHz 3 15 - -.4 -.6 -.8-1. -2. - -1. - - 2GHz -165-15.1 Per Div -135-12 -15-9 S12-75 -6-45 -3-15 2 GHz Mag Max 6 15 165-18 135 12 15 9 75 6 45 18 GHz 3 15.4.6.4.8.6.8 1. 1. S22 2. 2. 18GHz 1.1. -165-15 2 Per Div -135-12 -15 S21-9 -75-6 -45-3 -15 2 GHz - -.4 -.6 -.8-1. -2. - -1. - - 2GHz 3 / 5
FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG.5.99891-11.249 22.18 173.81.38131 84.11 65-13.841.1.9963-22.286 21.835 167.74.7579 78.333 936-27.28.9864-43 2.63 156.38.14168 67.567 245-51.153.3.97335-61.165 18.944 146.45.19538 58.24 3376-7.488.4.9685-76.492 17.175 138.1.23616 5.477 4626-85.489.5.94996-89.181 15.492 131.16.26624 44.136 5683-96.998.6.9415-99.625 13.98 125.41.28825 38.98 6545-15.86.7.93396-18.24 12.658 12.6.3443 34.77 7249-112.74.8.92837-115.4 11.516 116.54.31646 31.35 7834-118.14.9.92397-121.41 1.532 116.3255 28.425 8333-122.42 1.9248-126.49 9.6827 11.4.33239 26.7 8771-125.84 1.1.91769-13.84 8.9461 17.39.3377 23.955 9169-128.61 1.2.91545-134.59 8.338 14.34182 22.199 9539-13.85 1.3.91363-137.85 7.745 12.92.3455 2.683 9891-132.68 1.4.91214-14.71 7.2435 11.34758 19.364.3232-134.18 1.5.9191-143.24 6.825 99.24.34957 18.28.3567-135.42 1.6.9989-145.49 6.489 97.618.35113 17.19.391-136.44 1.7.994-147.5 6.558 96.111.35234 16.288.31234-137.28 1.8.9833-149.32 5.7375 94.72.35326 15.485.3157-137.97 1.9.9774-15.96 5.4492 93.377.35395 14.767.3191-138.54 2.9723-152.45 5.187 92.124.35444 14.123.32254-139.1 3.94-162.3 3.4748 81.52.353 1.5.3571-14.96 4.941-167.64 2.5798 73.64.346 9.26.3983-141.11 5.951-171.11 2.3 66.87.337 9.37.4415-141.38 6.965-173.66 1.6573 6.79.327 1.45.4843-142.5 7.981-175.67 1.3879 55.24.318 12.36.5254-149 8.998-177.35 1.1843 5.12.31 14.98.5638-144.38 9.9115-178.82 1.254 45.38.33 18.21.5993-145.82 1.9131 179.85.8983 4.99.3 21.9.6315-147.36 11.9147 178.64.7947 36.92.299 25.91.666-148.92 12.9161 177.5.79 33.15.32 3.4.6868-15.48 13.9175 176.42.6371 29.65.38 34.13.713-152.1 14.9188 175.4.5762 26.4.317 38.3.7314-153.49 15.9199 174.41.5241 23.4.328 41.66.752-154.92 16.921 173.45.4791 2.62.342 44.95.767-156.3 17.922 172.52.44 18.5.358 47.87.7821-157.61 18.9229 171.61.458 15.67.376 5.43.7956-158.87 * The data does not include gate, drain and source bond wires. 4 / 5
SMALL SIGNAL MODEL, V DS = 8 V, I DS = 24 ma SCHEMATI PARAMETERS Lg Rg Cgd Rd Ld Lg.39 nh Rs.394 Ohm Cgs Ri T Gm Cds Rds Rg.45 Ohm Ls.1 nh Cgs 4.435 pf Cds.536 pf Ri.91 Ohm Rds 63.7 Ohm Cgd.181 pf Rd.63 Ohm Rs Gm 44.3 ms Ld.8 nh T 3.9 psec Ls LARGE SIGNAL MODEL, V DS = 8 V, I DS = 24 ma SCHEMATI TOM2 MODEL PARAMETERS Lg Rg Cgs Ris Cgd Rid Id Rs Cds Rdb Cbs Rd Ld VTO -1.768 V VMAX.5 V ALPHA 2.81 CGD.185 pf BETA.549 CGS 7.22 pf GAMMA.173 CDS.5364 pf DELTA.818 RIS.98 Ohm Q.96 RID.1 Ohm NG.1 VBR 15 V ND.1 RDB 46.517 Ohm TAU 3.9 ps CBS 9.6833 pf RG.454 Ohm TNOM 25 C RD.63 Ohm LS.11 nh RS.394 Ohm LG.391 nh IS 1E-11 ma LD.8 nh N 1 AFAC 1 VBI 1 V NFING 1 VDELTA V Ls 5 / 5