LUHG121_Preliminary LUHG121Z*_Preliminary SEPT. 29 SUSPM TM 12V A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes with fast and soft reverse recovery Indusial standard package with copper base plate 1us short circuit rated Included gate surge protection function Application Welder Power supply Indusial motor drive Induction heating SUSPM1 94 X 34 X 3 mm Absolute Maximum Ratings T C = 25 C unless otherwise noted Item Symbol Condition Value Units V CES C = 25 C 12 V V GES C = 25 C ±2 V I C = 25 C 16 A C C = 8 C A IGBT I CM t p =1ms 2 A T sc j = 125 C, V CC = 6V, V GE = 15V 1 μs T j(max) Maximum chip junction temperature -4 to + 15 C P C = 25 C 5 W D C = 8 C 28 W V RRM C = 25 C 12 V I C = 25 C - A F C = 8 C - A Inverse diode I FRM C = 25 C, t p =1ms - A T j(max) Maximum chip junction temperature -4 to + 15 C P C = 25 C - W D C = 8 C - W T stg Storage junction temperature -4 to +125 C T j(op) Operating junction temperature -4 to +125 C V iso @AC 1minute 25 V Module Bolt length Recommended Main Terminal bolt length(m5) 8 ~ 12 mm M t Main terminal mounting torque( M5) 2.5 ~ 5. Nm M s Heat sink mounting torque(m6) 3. ~ 5. Nm W Weight 17 g Internal Circuit & Pin Description Pin Number Pin Name Pin Description 1 C2E1 Output 2 E2 Negative dc link ouput 3 C1 Positive dc link ouput 4 G1 Gate input for high-side 5 E1 Emitter input for high-side 6 G2 Gate input for low-side 7 E2 Emitter input for low-side 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter
Elecical Characteristics of IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES C-E breakdown voltage V GE = V, I C = 25uA 12 - - V I CES Collector cut-off current V CE = V CES, V GE = V - - 1. ma I GES G-E leakage current V GE = V GES, V CE = V - - 2 na On Characteristics V GE(th) G-E threshold voltage V GE = V CE, I C =ma 6.32 6.82 7.32 V Collector to emitter I V C =A, V GE = 15V, T c =25 C - 1.92 2.42 V CE(sat) Saturation voltage I C =A, V GE = 15V, T c =125 C - 2.14 - V Dynamic Characteristics C ies Input capacitance - 7.43 - nf V CE = 25V, V GE = V, C oes Output capacitance -.52 - nf f = 1MHz, C res Reverse ansfer capacitance -.34 - nf Switching Characteristics t d(on) Turn-on delay time - 15 - ns t r Rise time - 5 - ns,r G =1 ohm t d(off) Turn-off delay time - 44 - ns L= uh, V CC =6V t f Fall time - 85 - V GE = ± 15V ns E on Turn-on switching loss Ic=A - 7. - mj E off Turn-off switching loss - 5.4 - mj E ts Total switching loss - 12.4 - mj t d(on) Turn-on delay time - 12 - ns t r Rise time - 5 - ns t,r G =1 ohm d(off) Turn-off delay time - 55 - ns L= uh, V CC =6V t f Fall time - 25 - V GE = ± 15V ns E on Turn-on switching loss - 8.6 - Ic=A mj E off Turn-off switching loss - 8.6 - mj E ts Total switching loss - 17.2 - mj Q g Total gate charge - - - nc Q ge Gate-emitter charge V GE =V ~ +15V - - - nc Q gc Gate-collector charge - - - nc Elecical Characteristics of Inverse Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units T C = 25 C - 1.66 2.16 V F Diode forward voltage I F =A, V GE =V V T C = 125 C - 1.69 - Diode reverse recovery T C = 25 C - 388 - t rr time ns T C = 125 C - 598 - Diode peak reverse T C = 25 C - 137 - I RRM recovery current R G =1 Ohm A T C = 125 C - 175 - L= uh, V CC =6V Diode reverse recovery T Q V GE = ± 15V, I F =A C = 25 C - 15.24 - rr charge uc T C = 125 C - 29 - Diode reverse recovery T C = 25 C - - - E rr energy mj T C = 125 C - - - 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter
Thermal Characteristics T C = 25 C unless otherwise noted Symbol Parameter Min Typ. Max. Units R th(j-c) Junction-to-case (IGBT part) - -.25 /W R th(j-c)d Junction-to-case (Diode part) - - - /W 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter
4 3 2 2V 18V 16V 15V 14V 12V VGE=1V 4 3 2 2V 18V 16V 15V 14V 12V VGE=1V 1 2 3 4 5 6 Collector-emitter voltage, VCE [V] Fig 1. Typical output characteristics 1 2 3 4 5 6 7 Collector-emitter voltage, VCE [V] Fig 2. Typical output characteristics 4 VGE=15V 4 Collector Current, Ic [A] 3 2 Forward current, IF [A] 3 2 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] Fig 3. Typical ansfer characteristics..5 1. 1.5 2. 2.5 3. Forward voltage, VF [V] Fig 4. Typical diode forward characteristics Switching time, t [ns] 1 4 1 3 1 2 Tc = 25 C, VCC=6V, RG=1 Ohm L= uh, VGE=± 15V Switching loss, E [mj] 3 25 2 15 1 Tc = 25 C VCC=6V, RG=1 Ohm L= uh,, VGE=± 15V 5 1 1 5 15 2 25 3 Fig 5. Typical switching time vs collector current 5 15 2 25 3 Fig 6. Typical switching loss vs collector current 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter
Switching time, t [ns] 1 4 1 3 1 2, Ic=A, L= uh VCC=6V, VGE=± 15V Switching Loss, E [mj] 4 35 3 25 2 15 1 5 Ic=A, L= uh Vcc=6V, VGE=± 15V 1 1 1 2 3 4 5 6 7 1 2 3 4 5 6 7 Gate Resistor, RG [ohm] Gate Resistor, RG [ohm] Fig 7. Typical switching time vs gate resistor Fig 8. Typical switching loss vs gate resistor Diode peak reverse recovery current, Irrm [A] 28 26 24 22 2 18 16 14 12 Tc = 25 C, VCC=6V, RG=1 Ohm L= uh, VGE=± 15V 8 5 15 2 25 3 Diode peak reverse recovery current, Irrm [A] 24 22 2 18 16 14 12 8 6 Tc = 25 C VCC=6V, IF=A L= uh, VGE=± 15V 1 2 3 4 5 6 7 Forward current, IF [A] Gate resistor, RG [ohm] Fig 9. Diode peak reverse recovery current vs Forward current Fig 1. Diode peak reverse recovery current vs Gate resistor 18 16 14 12 8 6 4 2 25 5 75 125 15 Case temperature, Tc [ C] Tc vs Ic 14 12 8 6 f vs Ic Vcc=6V, VGE=± 15V 4 RG=1 ohm, Tc=8 C, Duty=5% =Err=mJ, Rth(j-c)=.25 C/W 2 1 1 Frequency, f [khz] Fig 11. Case temperature vs collector current Fig 12. Frequency vs collector current 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter
1 Peak power impedance, Zth [ C/W] 1-1 1-2 D=.9 D=.7 D=.5 D=.3 D=.1 D=.5 D=.2 D=.1 D=.5 D=.2 1-3 1-5 1-4 1-3 1-2 1-1 1 1 1 Pulse duration, T [sec] Fig 13. IGBT ansient thermal impedance 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter
Package dimension (dimensions in mm) 1 2 3 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter