SEPT. 9 LUH75G121_Preliminary LUH75G121Z*_Preliminary SUSPM TM 1V 75A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes with fast and soft reverse recovery Industrial standard package with copper base plate 1us short circuit rated Included gate surge protection function Application Welder Power supply Industrial motor drive Induction heating SUSPM1 94 X 34 X 3mm Absolute Maximum Ratings T C = 25 C unless otherwise noted Item Symbol Condition Value Units V CES C = 25 C 1 V V GES C = 25 C ± 2 V I C = 25 C 14 A C C = 8 C 75 A IGBT I CM t p =1ms 1 A T sc j = 125 C, V CC = 6V, V GE = 15V 1 μs T j(max) Maximum chip junction temperature -4 to + 1 C P C = 25 C 39 W D C = 8 C 22 W V RRM C = 25 C 1 V I C = 25 C - A F C = 8 C - A Inverse diode I FRM C = 25 C, t p =1ms - A T j(max) Maximum chip junction temperature -4 to + 1 C P C = 25 C - W D C = 8 C - W T stg Storage junction temperature -4 to +125 C T j(op) Operating junction temperature -4 to +125 C V iso @AC 1minute 2 V Module Bolt length Recommended Main Terminal bolt length(m5) 8 ~ 12 mm M t Main terminal mounting torque( M5) 2.5 ~ 5. Nm M s Heat sink mounting torque(m6) 3. ~ 5. Nm W Weight 17 g Internal Circuit & Pin Description Pin Number Pin Name Pin Description 1 C2E1 Output 2 E2 Negative dc link ouput 3 C1 Positive dc link ouput 4 G1 Gate input for high-side 5 E1 Emitter input for high-side 6 G2 Gate input for low-side 7 E2 Emitter input for low-side 9 LS Industrial Systems *Option : Zener Diode between Gate and Emitter
Electrical Characteristics of IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES C-E breakdown voltage V GE = V, I C = 2uA 1 - - V I CES Collector cut-off current V CE = V CES, V GE = V - - 1. ma I GES G-E leakage current V GE = V GES, V CE = V - - na On Characteristics V GE(th) G-E threshold voltage V GE = V CE, I C =75mA 6.4 6.9 7.4 V Collector to emitter I V C = 75A, V GE = 15V, T c =25 C - 1.92 2.42 V CE(sat) Saturation voltage I C = 75A, V GE = 15V, T c =125 C - 2.14 - V Dynamic Characteristics C ies Input capacitance - 5.52 - nf V CE = 25V, V GE = V, C oes Output capacitance -.4 - nf f = 1MHz, C res Reverse transfer capacitance -.26 - nf Switching Characteristics t d(on) Turn-on delay time - 11 - ns t r Rise time - - ns,r G =15 ohm t d(off) Turn-off delay time - 48 - ns L= uh, V CC =6V t f Fall time - 12 - ns V GE = ±15 E on Turn-on switching loss Ic=75A - 6.75 - mj E off Turn-off switching loss - 3.9 - mj E ts Total switching loss - 1.65 - mj t d(on) Turn-on delay time - 11 - ns t r Rise time - - ns t,r G =15 ohm d(off) Turn-off delay time - 545 - ns L= uh, V CC =6V t f Fall time - 235 - ns V GE = ±15 E on Turn-on switchingl loss - 8. - mj Ic=75A E off Turn-off switching loss - 6.5 - mj E ts Total switching loss - 14.5 - mj Q g Total gate charge - - - nc Q ge Gate-emitter charge V GE =V ~ +15V - - - nc Q gc Gate-collector charge - - - nc Electrical Characteristics of Inverse Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V F Diode forward voltage I F =75A, V GE =V T C = 25 C - 1.58 2.8 T C = 125 C - 1.62 - V t rr Diode reverse recovery time - T C = 25 C - 547 - T C = 125 C - 394 - ns I RRM R Diode peak reverse recovery G =15 Ohm T C = 25 C - 13 - L= uh, V current CC =6V T V GE = ± 15V, I F =75A C = 125 C - - A Q rr Diode reverse recovery charge - T C = 25 C - 2.35 - T C = 125 C - 11.13 - uc E rr Diode reverse recovery energy - T C = 25 C - - - T C = 125 C - - - mj 9 LS Industrial Systems *Option : Zener Diode between Gate and Emitter
Thermal Characteristics T C = 25 C unless otherwise noted Symbol Parameter Min Typ. Max. Units R th(j-c) Junction-to-case (IGBT part) - -.32 /W R th(j-c)d Junction-to-case (Diode part) - - - /W 9 LS Industrial Systems *Option : Zener Diode between Gate and Emitter
3 3 2V 18V 16V 15V 3 3 2V 18V 16V 15V 2 1 14V 12V VGE=1V 2 1 14V 12V VGE=1V 1 2 3 4 5 6 7 8 9 1 Collector emitter voltage, VCE [V] Fig 1. Typical output characteristics 1 2 3 4 5 6 7 8 9 1 Collector emitter voltage, VCE [V] Fig 2. Typical output characteristics 2 VGE=15V 2 3 1 Forward current, IF [A] IF [A] 2 1 1 1 2 3 4 5 Collector emitter voltage, VCE [V] Fig 3. Typical transfer characteristics..5 1. 1 1.5 2. 2 2.5 3. 3 Forward voltage, VF [V] Fig 4. Typical diode forward characteristics 1 4 35 Switching time, t [ns] 1 3 1 2 Tc = 25 C, Tc = 125 C VCC=6V, RG=15 Ohm L= uh, VGE=± 15V td(off) td(on) Switching loss, E [mj] 3 25 2 15 1 Tc = 25 C Tc = 125 C VCC=6V, RG=15 Ohm L= uh,, VGE=± 15V Eon Eoff tr 5 1 1 25 75 125 1 175 225 Fig 5. Typical switching time vs collector current 1 2 Fig 6. Typical switching loss vs collector current 9 LS Industrial Systems *Option : Zener Diode between Gate and Emitter
1 4 2 Switching time, t[ns] 1 3 1 2, Ic=75A, L= uh VCC=6V, VGE=± 15V td(off) td(on) tr Switching loss, E [mj] 18 16 14 12 1 8 6 4 Ic=75A, L= uh Vcc=6V, VGE=± 15V Eon Eoff 2 1 1 1 2 3 4 6 7 1 2 3 4 6 7 Gate resistor, RG [ohm] Gate resistor, RG [ohm] Fig 7. Typical switching time vs gate resistor Fig 8. Typical switching loss vs gate resistor Diode peak reverse recovery current, Irrm [A] 225 175 1 125 75 Tc = 25 C, Tc = 125 C VCC=6V, RG=15 Ohm L= uh, VGE=± 15V 1 2 Diode peak reverse recovery current, Irrm [A] 18 16 14 12 8 6 Tc = 25 C, Tc = 125 C VCC=6V, Ic=75A L= uh, VGE=± 15V 1 2 3 4 6 7 Forward current, IF[A] Gate resistor, RG [ohm] Fig 9. Diode peak reverse recovery current vs forward current Fig 1. Diode peak reverse recovery current vs gate resistor 16 14 Tc vs Ic 9 12 8 6 4 8 7 6 4 f vs Ic Vcc=6V, VGE=± 15V 2 25 75 125 1 3 RG=15 ohm, Tc=8 C, Duty=% Eon=Err=mJ, Rth(j-c)=.32 C/W 2 1 1 Case temperature, Tc [ C] Frequency, f [khz] Fig 11. Case temperature vs collector current Fig 12. Frequency vs collector current 9 LS Industrial Systems *Option : Zener Diode between Gate and Emitter
1 Peak power impedance, Zth [ C/W] 1-1 1-2 D=.9 D=.7 D=.5 D=.3 D=.1 D=.5 D=.2 D=.1 D=.5 D=.2 1-3 1-6 1-5 1-4 1-3 1-2 1-1 1 1 1 Pulse duration, T [sec] Fig 13. IGBT transient thermal impedance 9 LS Industrial Systems *Option : Zener Diode between Gate and Emitter
Package dimension (dimensions in mm) 1 2 3 9 LS Industrial Systems *Option : Zener Diode between Gate and Emitter