N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions of compliance please see /doc?999 TO-5 D G G D Top View S Drain Connected to Tab S N-Channel MOSFET Order Number: SUDN-5L-GE (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ± V Continuous Drain Current (T J = 5 C) b T C = 5 C.5 I D T C = 5 C.9 Pulsed Drain Current I DM 8 A Continuous Source Current (Diode Conduction) I S.5 Avalanche Current I AR 5 Repetitive Avalanche Energy (Duty Cycle %) L =. mh E AR.5 mj Maximum Power Dissipation T C = 5 C.7 b P D T A = 5 C.5 a W Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambient a t sec 4 5 R thja Steady State 8 C/W Junction-to-Case R thjc 7.5 Notes: a. Surface mounted on " x " FR4 board. b. See SOA curve for voltage derating. Document Number: 8 S-9-Rev. A, 8-Jan- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SUDN-5L-GE SPECIFICATIONS (T A = 5 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. a Max. Unit. Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 5 µa Gate Threshold Voltage V GS(th) V DS = V GS, I D = 5 µa V Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na V DS = V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V, T J = 5 C 5 µa On-State Drain Current b I D(on) V DS = 5 V, V GS = V 8 A V GS = V, I D = A.. Drain-Source On-State Resistance b R DS(on) V GS = V, I D = A, T J = 5 C.5 V GS = 4.5 V, I D = A.8.5 Forward Transconductance b g fs V DS = 5 V, I D = A 8.5 S Dynamic a Input Capacitance C iss V GS = V, V DS = 5 V, F = MHz 4 Total Gate Charge c Q g Output Capacitance C oss 4 pf Reverse Transfer Capacitance C rss 7.7 4 Gate-Source Charge c Q gs V DS = 5 V, V GS = 5 V, I D =.5 A. nc Gate-Drain Charge c Q gd.7 Turn-On Delay Time c t d(on) 7 Rise Time c t r V DD = 5 V, R L = 7.5 8 Turn-Off Delay Time c t d(off) I D.5 A, V GEN = V, R g =.5 8 ns Fall Time c t f 9 4 Source-Drain Diode Ratings and Characteristics (T C = 5 C) Pulsed Current I SM 8 A Diode Forward Voltage b V SD I F =.5 A, V GS = V.9. V Source-Drain Reverse Recovery Time t rr I F =.5 A, di/dt = A/µs 5 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width µs, duty cycle %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 8 S-9-Rev. A, 8-Jan- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SUDN-5L-GE TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) 5 5 T C = - 55 C V GS = V thru 5 V 5 C - Drain Current (A) 9 4 V - Drain Current (A) 9 5 C I D I D V, V 4 8 V DS - Drain-to-Source Voltage (V) Output Characteristics 4 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 5. g fs - Transconductance (S) 9 T C = - 55 C 5 C 5 C - On-Resistance (Ω) RDS(on).5..5..5 V GS = 4.5 V V GS = V 9 5 Transconductance. 9 5 On-Resistance vs. Drain Current 5 C - Capacitance (pf) 5 5 5 C oss C iss C rss - Gate-to-Source Voltage (V) V GS 8 4 V DS = 5 V I D =.5 A 4 8 V DS - Drain-to-Source Voltage (V) Capacitance 4 5 Q g - Total Gate Charge (nc) Gate Charge Document Number: 8 S-9-Rev. A, 8-Jan- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SUDN-5L-GE TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted). R DS(on) On-Resistance (Normalized).75.5.5..75 V GS = V I D = A - Source Current (A) I S T J = 75 C T J = 5 C.5-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature THERMAL RATINGS 8..4..8.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage μs 4 Limited by R DS(on) * ms ms 5 5 75 5 5 T C - Case Temperature ( C) DC, s, T s, ms C = 5 C Single Pulse BVDSS Limited.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.....5 Single Pulse. -5-4 - - - Square Wave Pulse Duration (sec) maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?8. 4 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 8 S-9-Rev. A, 8-Jan- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Package Information TO-5AA Case Outline E b A C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. L A.8.8.8.94 A -.7 -.5 b.4.88.5.5 b.7.4..45 D H b 4.95 5.4.95.5 C.4..8.4 C.4.89.8.5 b e e b L4 L5 gage plane height (.5 mm) C A L D 5.97..5.45 D 4. -. - E.5.7.5.5 E 4. -.7 - H 9.4.4.7.4 e.8 BSC.9 BSC e 4.5 BSC.8 BSC L.4.78.55.7 L.89.7.5.5 D L4 -. -.4 L5..5.4. E ECN: T--Rev. P, -May- DWG: 547 Notes Dimension L is for reference only. Revision: -May- Document Number: 797 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Application Note 8 RECOMMENDED MINIMUM PADS FOR DPAK (TO-5).4 (5.9).9 (.8).87 (.).4 (.8).4 (.8).8 (4.57).55 (.97) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 7594 Revision: -Jan-8
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