Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +23

Similar documents
Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +37

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +10

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +10

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20. DC Current A 1.6

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +30

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +37

Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V

Features. = +25 C, Vdd = 5V

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

Features. = +25 C, Vdc = +7V

DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units

Parameter Min. Typ. Max. Min. Typ. Max. Units

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Features. = +25 C, Vdc = +5V

2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range

20W Solid State Power Amplifier 6-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]

20 MHz to 500 MHz IF Gain Block ADL5531

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

50 MHz to 4.0 GHz RF/IF Gain Block ADL5602

5W Ultra Wide Band Power Amplifier 2-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

100W Power Amplifier 8GHz~11GHz

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

Features. = +25 C, Vdd 1, 2, 3 = +3V

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db

IF Digitally Controlled Variable-Gain Amplifier

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz

30W Solid State High Power Amplifier 2-6 GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm

4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz

Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units

Features. = +25 C, Vdd = +10 V, Idd = 350 ma

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114

30 MHz to 6 GHz RF/IF Gain Block ADL5544

Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

20 MHz to 500 MHz IF Gain Block ADL5531

30 MHz to 6 GHz RF/IF Gain Block ADL5611

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

Features. = +25 C, Vdd= 8V, Idd= 75 ma*

HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

Parameter Min. Typ. Max. Units. Frequency Range 8-11 GHz. Saturated Output Power (Psat) 52 dbm. Input Max Power (No Damage) Psat Gain dbm

30W Wideband Solid State Power Amplifier 6-12GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

8W Wide Band Power Amplifier 1GHz~22GHz

Features. = +25 C, Vdd =+28V, Idd = 850 ma [1]

OBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description

0.5-20GHz Driver. GaAs Monolithic Microwave IC

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

Features. = +25 C, +Vdc = +6V, -Vdc = -5V

SA620 Low voltage LNA, mixer and VCO 1GHz

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E

HMC695LP4 / HMC695LP4E

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Parameter Min Type Max Units Frequency Range GHz Small Signal Gain,S21 18 db. Input Return Loss,S11 10 db Output Return Loss,S22 7 db

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*

HMC478SC70 / 478SC70E v

GaAs, phemt, MMIC, Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049LP5E

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Gain Control Range db

AVP TO 2600 MHz, 15 WATTS HIGH POWER GaNPak B AMPLIFIER AVP2524 SPECIFICATIONS * INTERMODULATION PERFORMANCE ABSOLUTE MAXIMUM RATINGS AVP2524

GHz SUPER LOW NOISE PACKAGED AMPLIFIER WHM0510AE 1

BROADBAND DISTRIBUTED AMPLIFIER

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter

Features. Gain Variation Over Temperature db/ C

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

Features. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units

MMA GHz, 0.1W Gain Block Data Sheet

dbm Supply Current (Idd) (Vdd=+36V)

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

1.9GHz Power Amplifier

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V

HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz

Parameter Min. Typ. Max. Min. Typ. Max. Units

2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950

HMC580ST89 / 580ST89E. Features OBSOLETE. DC GHz GHz GHz. db db db Gain Variation Over Temperature DC GHz 0.

GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049

SLA SMA DATA SHEET

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

Transcription:

AMT-A0016 50MHz to 500MHz Limiting Amplifier Data Sheet Features Limiting Amplifier provides Pout> +12 dbm even with Pin varying from 18 dbm to 0 dbm Small Signal Gain 33 db Phase Noise 150 db @ 1KHz offset 2.7 db Noise Figure High Efficiency, 350mW (5V,70mA) Steady Output Power level over Temperature Operates from a Single +5V Supply Unconditionally Stable Description The AMT-A0016 is a Limiting amplifier with steady Output power over frequency and temperature. The performance is achieved through the use of AMTI s proprietary technology. The amplifier I/Os are Internally matched to 50 Ohms and are DC blocked. The AMT-A0016 is ideal for use as LO driver, IF amplifier or limiting driver stage in a Hi-Rel communications system for Commercial or Military applications Applications IF Amplifier, LO Driver Limiting Amplifier MAXIMUM RATINGS 1 Parameter Symbol Units MIN MAX Operating Temperature Case T MO C -54 +85 Storage Temperature - Case T MS C -55 +150 RF Input power (CW) Pin dbm +23 Die T Junction T J C +150 Thermal Resistance Θ jc C/Watt +65 ESD V <400 2 Positive Supply Voltage V +SS V +7 1.Stresses above those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. ESD Human Body Model =400V, ESD machine model = 50V 1 Rev A

ELECTRICAL SPECIFICATIONS @ 23ºC Parameter Conditions Units MIN Typical MAX Frequency Range MHz 50 500 Gain 2 Small Signal db 28 33 Output Power Saturated Power dbm +10 +12.7 Input Power Range Psat power dbm -16-18 Phase Noise Offset Frequency 1kHz @ 100MHz db -152 Noise Figure Higher for < 100 MHz db 2.7 3.0 RF Input Impedance Reference to 50 ohms up to Pin = -2 dbm 1.8:1 2.0:1 RF Output Impedance Reference to 50 ohms 1:4:1 1.5:1 Stability Factor K Unconditionally Stable 1 Stability Factor B1 Unconditionally Stable 0 Supply Voltage Positive: V +5V Supply Current Positive: Psat ma 70 80 Notes: 1/ Unconditional Stability: (K > 1) and (B1 > 0) 2/ Measured with VNA input power of -25dBm Customized configurations of the above specifications are available 2

Typical Performance @ 23ºC S Parameters Pin = -25 dbm Pin = -2 dbm 3 Rev A

Typical Performance Noise Figure @ 23C 4

Typical Performance Pin VS Pout 5 Rev A

Pin Numbers Function 1 RF Input 2 +5V 3 Ground 4 RF Output Case Ground RFin and RFout pins have internal DC blocking capacitor Model Number Description Package AMT-A0016-FP 4 pin Flat Pack FP 0.500SQ, 0.170Ht AMT-M001 AMT-A0016-SMA SMA Connectorized Fixture Outline: AMT-M011 6

Package Outline: Flat Pack 0.500SQ (inches) Package Outline: SMA Connectorized (inches) 7 Rev A

Contact us for custom configurations and special requirements. Our highly experienced team of engineers can quickly identify and implement innovative solutions using latest technology to improve performance and reduce cost. Add additional functionality: Input limiter, Temperature compensation, Amplitude/Phase matching, Amplitude/Phase Tracking, Automatic Gain control, Gain sloping, Bypass path, Specific supply voltage, Regulation, Power detector, Health status, and others Integrated: Filters, Switches, Limiter, Digital attenuator, Phase shifter, Microcontroller, Multiple amplifiers, Switch matrix, Comb generators and others Mechanical: Custom packages - Surface Mount, Connectorized, Waveguide, Carrier, Drop-in, Hermetic and others Agile Microwave Technology Inc is the logical choice for all your commercial or military RF/Microwave components/module requirements. Contact Information: 101 Bloomingdale Road Hicksville, NY 11801 Phone: (516) 931-1760 Fax: (212) 374-1153 info@agilemwt.com www.agilemwt.com AMTI reserves the right to change at any time without notice the design, specifications, function/form or availability of its products described herein. The buyer/customer has the responsibility to validate the performance for their applications. No liability is assumed as result of use of this product and no patent licenses are implied. AMTI reserves all rights. 8