J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92 SuperSOT-3 Marking: I8. Drain 2. Source 3. Gate. Drain 2. Source 3. Gate Figure. J9 Device Package Figure 2. MMBFJ8 Device Package Ordering Information Part Number Top Mark Package Packing Method J9 J9 TO-92 3L Bulk J9-D26Z J9 TO-92 3L Tape and Reel MMBFJ8 I8 SSOT 3L Tape and Reel (), (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. alues are at T A = 2 C unless otherwise noted. Symbol Parameter alue Unit DG Drain-Gate oltage 2 GS Gate-Source oltage -2 I GF Forward Gate Current ma T J, T STG Operating and Storage Junction Temperature Range - to C Notes:. These ratings are based on a maximum junction temperature of C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. 22 Semiconductor Components Industries, LLC. October-27, Rev. 3 Publication Order Number: J9/D
Thermal Characteristics alues are at T A = 2 C unless otherwise noted. Symbol Notes: 3. PCB size: FR-4, 76 mm x 4 mm x.7 mm (3. inch x 4. inch x.62 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm 8mm.mm; mounting pad for the collector lead minimum 6cm 2. Electrical Characteristics Parameter alues are at T A = 2 C unless otherwise noted. Max. J9 (3) MMBFJ8 (4) Total Device Dissipation 62 3 mw P D Derate Above 2 C. 2.8 mw/ C R θjc Thermal Resistance, Junction-to-Case 2 C/W R θja Thermal Resistance, Junction-to-Ambient 2 37 C/W Unit J9 / MMBFJ8 N-Channel Switch Symbol Parameter Conditions Min. Max. Unit Off Characteristics (BR)GSS Gate-Source Breakdown oltage I G = - μa, DS = -2 I GSS Gate Reverse Current GS = -, DS = -3. GS = -, DS =, T A = C -2 na GS (off) Gate-Source Cut-Off oltage DS =, I D = na MMBFJ8-3. -. J9-2. -6. On Characteristics I DSS Zero-Gate oltage Drain Current () DS =, GS = MMBFJ8 8 J9 4 ma r DS (on) Drain-Source On Resistance DS., GS = MMBFJ8 8. J9 2 Ω Small Signal Characteristics C dg (on) C sg (off) Drain-Gate &Source-Gate On Capacitance Note:. Pulse test: pulse width 3 μs, duty cycle 2%. DS =, GS =, f =. MHz 8 pf C dg (off) Drain-Gate Off Capacitance DS =, GS = -, f =. MHz pf C sg (off) Source-Gate Off Capacitance DS =, GS = -, f =. MHz pf 2
Typical Performance Characteristics 8 6 4 2 Common Drain-Source GS = -. - 4. -. - 2. - 3. T A = 2캜 C TYP GS(off) = -..4.8.2.6 2 DS - DRAIN-SOURCE OLTAGE () Figure 3. Common Drain-Source (Ω) r DS - DRAIN "ON" RESISTANCE Parameter Interactions I DSS @ DS =., GS = PULSED r @ = m, = DS DS GS GS(off) @ DS =., I D = 3. na r DS I DSS _.. GS (OFF) - GATE CUTOFF OLTAGE () Figure 4. Parameter Interactions, I DSS - DRAIN CURRENT (ma) J9 / MMBFJ8 N-Channel Switch C ts (C rs ) - CAPACITANCE (pf) f =. -. MHz C iss ( DS =.) C ( = ) rss DS -4-8 -2-6 GS - GATE-SOURCE OLTAGE () -2 I - DRAIN CURRENT (ma) D 4 3 2 T A = 2 C TYP GS(off) = -.7 GS = -. -.2 -.3 -.4 -. 2 3 4 DS- DRAIN-SOURCE OLTAGE () Figure. Common Drain-Source Figure 6. Common Drain-Source r DS - NORMALIZED RESISTANCE 2 GS(off) @., μa r = DS r DS - GS GS(off) I D =. ma 2 I D = ma.2.4.6.8 GS / GS(off) - NORMALIZED GATE-SOURCE OLTAGE ()..3.. 2 f - FREQUENCY (khz) e - NOISE OLTAGE (n / Hz) n DG = BW = 6. Hz @ f = Hz, Hz =.2 @ f. khz Figure 7. Normalized Drain Resistance vs. Bias oltage Figure 8. Noise oltage vs. Frequency 3
Typical Performance Characteristics (Continued) t ON - TURN-ON TIME (ns) 8 6 4 2 Switching Turn-On Time vs Gate-Source Cutoff oltage T A = 2캜 C DD =. GS(off) = - 2 I D = ma I D = 3 ma -2-4 -6-8 - GS(off) - GATE-SOURCE CUTOFF OLTAGE () Figure 9. Switching Turn-On Time vs. Gate-Source Cut-Off oltage t OFF - TURN-OFF TIME (ns) 4 3 2 Switching Turn-On Time vs Drain Current T A = 2캜 C DD =. GS(off) = - 8. GS(off) = -. GS(off) = - 3. GS(off) = - 2 2 2 Figure. Switching Turn-On Time vs. Drain Current J9 / MMBFJ8 N-Channel Switch (Ω) r DS - DRAIN "ON" RESISTANCE GS(off) = - 3. 2 C 2 C 2 C 2 C = GS - C GS(off) = -. g os - OUTPUT CONDUCTANCE ( mhos) μ GS(off) - 4. - 2.. =. DG 2 2 2. T A = 2 C -. f =. khz. Figure. On Resistance vs. Drain Current Figure 2. Output Conductance vs. Drain Current g fs - TRANSCONDUCTANCE (mmhos) T A = 2 C T = - C A DG = T A = 2 C f =. khz T A = 2 C GS(off) = -. GS(off) = - 3. GS(off) = -.. P D - POWER DISSIPATION(mW) 7 6 TO-92 4 SuperSOT-3 3 2 2 7 2 TEMPERATURE ( o C) Figure 3. Transconductance vs. Drain Current Figure 4. Power Dissipation vs. Ambient Temperature 4
Physical Dimensions J9 / MMBFJ8 N-Channel Switch D Figure. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
Physical Dimensions (Continued) J9 / MMBFJ8 N-Channel Switch Figure 6. 3-Lead, TO-92, Molded,.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type 6
Physical Dimensions (Continued) J9 / MMBFJ8 N-Channel Switch Figure 7. MOLDED PACKAGE, SUPERSOT, 3-LEAD 7
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