U9/9 N-Channel JFETs PRODUCT SUMMARY Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) U9. to 3 U9.5 to.5 7 FEATURES BENEFITS APPLICATIONS Low On-Resistance: U9 < 3 Fast Switching t ON : ns High Off-Isolation Low Capacitance: pf Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible Off-Error, Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally On Switches Current Limiters DESCRIPTION The U9/U9 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. This series features the lowest on-resistance of any JFET in the industry today. For similar products in TO-6A (TO-9) packaging, see the J5/6/7 data sheet. TheTO-6AC (TO-5) hermetically sealed case makes this series suitable for military applications. TO-6AC (TO-5) S Ordering Information: U9 E3 U9 E3 3 D G and Case Top View U9 U9 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage............................... 3 V Gate Current................................................ ma Storage Temperature................................... 65 to C Operating Junction Temperature.......................... 55 to 5 C Power Dissipation a......................................... Notes a. Derate mw/ C above 5 C 5 mw Document Number: 735 S-39 Rev. A, 7-Jun-
U9/9 SPECIFICATIONS (T A = 5 C UNLESS OTHERWISE NOTED) Static U9 Limits Parameter Symbol Test Conditions Typ a Min Max Min Max Unit Gate-Source Breakdown Voltage V (BR)GSS I G = A, V DS = V 35 3 3 Gate-Source Cutoff Voltage V GS(off) V DS = 5 V, I D = 3 na..5.5 Saturation Drain Current b I DSS V DS = V, V GS = V 5 ma Gate Reverse Current I GSS T A = 5 C. A V GS = 5 V, V DS = V. na Gate Operating Current b I G V DG = V, I D = 5 ma. V DS = 5 V, V GS = V. na Drain Cutoff Current I D(off) T A = 5 C.5 A Drain-Source On-Resistance r DS(on) V GS = V, I D = ma 3 7 Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V.7 V Dynamic Common-Source Forward Transconductance b g fs Common-Source Output Conductance b V DS = V, I D = 5 ma, f = khz g os Drain-Source On-Resistance r ds(on) V GS = V, I D = ma, f = khz 3 7 Common-Source Input Capacitance C iss V DS = V, V GS = V, f = MHz 6 6 Common-Source Reverse Transfer Capacitance C rss V DS = V, V GS = 5 V, f = MHz 3 3 Equivalent Input Noise Voltage e n V DG = V, I D = 5 ma, f = khz 3 nv Hz Switching Turn-On Time Turn-Off Time 55 5 U9 t d(on) 6 5 5 t r t d(off) VDD V =.5 V, V GS(H) = V See Switching Diagram 5 5 5 t f 9 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NVA b. Pulse test: PW 3 s duty cycle 3%. V ms pf ns TYPICAL CHARACTERISTICS (T A = 5 C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage r DS @ I D = ma, V GS = V I DSS @ V DS = V, V GS = V 6. 6 r DS I DSS..6.. I DSS Saturation Drain Current (ma) 6 On-Resistance vs. Drain Current T A = 5 C 5 V V Document Number: 735 S-39 Rev. A, 7-Jun-
U9/9 TYPICAL CHARACTERISTICS (T A = 5 C UNLESS OTHERWISE NOTED) On-Resistance vs. Temperature 5 Output Characteristics Switching Time (ns) 6 55 35 5 5 5 5 65 5 5 5 I D = ma r DS changes.7%/ C T A Temperature ( C) Turn-On Switching t r approximately independent of I D V DD =.5 V, R G = 5 V GS(L) = V t r 5 V V t d(on) @ I D = 3 ma Switching Time (ns) 3 6 6 V DS Drain-Source Voltage (V) Turn-Off Switching t d(off) independent of device V GS(off) V DD =.5 V, V GS(L) = V t f t d(off) V GS = V.5 V. V.5 V. V.5 V 3. V t d(on) @ I D = ma V GS(off) = V 6 3 5 C (pf) 5 9 6 3 Capacitance vs. Gate-Source Voltage V DS = V f = MHz C iss C rss g fs Forward Transconductance (ms) Transconductance vs. Drain Current T A = 55 C 5 C V DS = V f = khz 5 C 6 V GS Gate-Source Voltage (V) Document Number: 735 S-39 Rev. A, 7-Jun- 3
U9/9 TYPICAL CHARACTERISTICS (T A = 5 C UNLESS OTHERWISE NOTED) g os Output Conductance (ms) Output Conductance vs. Drain Current T A = 55 C 5 C V DS = V f = khz 5 C ) en Noise Voltage nv Hz ( V DG = V Noise Voltage vs. Frequency I D = ma. k k k f Frequency (Hz) g fs Forward Transconductance (ms) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 3 3 g fs and g os @ V DS = V V GS = V, f = khz 6 g fs g os 6 g os Output Conductance (ms) I G Gate Leakage na na na pa pa Gate Leakage Current T A = 5 C ma I GSS @ 5 C 5 ma ma T A = 5 C 5 ma I GSS @ 5 C 6 pa 6 V DG Drain-Gate Voltage (V) V DD R L SWITCHING TIME TEST CIRCUIT U9 U9 V GS(L) V 7 V V GS(H) OUT R L * 5 5 I D(on) ma 7 ma * Non-Inductive Input Pulse Rise Time < ns Fall Time < ns Pulse Width ns PRF MHz Sampling Scope Rise Time. ns Input Resistance M Input Capacitance.5 pf V GS(L) V IN Scope k 5 5 Document Number: 735 S-39 Rev. A, 7-Jun-
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: -Jul-